An apparatus for manufacturing an organic material includes an outer tube including an internal accommodating space, and at least one loading inner tube and at least one collecting inner tube disposed in the accommodation space, the loading inner tube including a mesh boat disposed in a first direction in which the loading inner tube extends.

A sublimator control valve system may include a sublimator having an injection port, a feedwater supply, a first solenoid valve in fluid communication with the feedwater supply and the injection port of the sublimator, a first sensor in electronic communication with a first controller, the first sensor configured to measure at least one of a first pressure parameter or a first temperature parameter; and a first tangible, non-transitory memory configured to communicate with the first controller, the tangible, non-transitory memory having instructions stored thereon that, in response to execution by the first controller, cause the first controller to perform operations comprising receiving, by the first controller, a command signal and the first pressure parameter, and controlling, by the first controller, the first solenoid valve in response to at least one of the command signal or the first pressure parameter.

A sublimator control valve system may include a sublimator having an injection port, a feedwater supply, a first solenoid valve in fluid communication with the feedwater supply and the injection port of the sublimator, a first sensor in electronic communication with a first controller, the first sensor configured to measure at least one of a first pressure parameter or a first temperature parameter; and a first tangible, non-transitory memory configured to communicate with the first controller, the tangible, non-transitory memory having instructions stored thereon that, in response to execution by the first controller, cause the first controller to perform operations comprising receiving, by the first controller, a command signal and the first pressure parameter, and controlling, by the first controller, the first solenoid valve in response to at least one of the command signal or the first pressure parameter.

The present invention relates to a method for the production of polyamide 6 with low extract content and a device for it. Here, a melt of non-extracted polyamide 6 is cleaned from monomer and oligomers in a degasification device in vacuum, wherein the vapor being withdrawn from the degasification device by the vacuum generation device is cleaned from monomer, oligomers and optionally water at first in a direct condenser which is operated with liquid -caprolactam and subsequently in a pre-separator which is cooled with a coolant, before it reaches the vacuum generation device. A particularly preferable variant of the method envisages the usage of the melt of polyamide 6 with low extract content so prepared in a direct process of spinning into textile fibers and/or filaments.

The present invention relates to a method for the production of polyamide 6 with low extract content and a device for it. Here, a melt of non-extracted polyamide 6 is cleaned from monomer and oligomers in a degasification device in vacuum, wherein the vapor being withdrawn from the degasification device by the vacuum generation device is cleaned from monomer, oligomers and optionally water at first in a direct condenser which is operated with liquid -caprolactam and subsequently in a pre-separator which is cooled with a coolant, before it reaches the vacuum generation device. A particularly preferable variant of the method envisages the usage of the melt of polyamide 6 with low extract content so prepared in a direct process of spinning into textile fibers and/or filaments.

Condensable metal halide materials, such as but not limited to tungsten hexachloride and tungsten pentachloride can be used deposit films metal or metal containing films in a chemical vapor deposition (CVD) or atomic layer deposition process. Described herein are high purity tungsten hexachloride and tungsten pentachloride systems and methods to purify tungsten hexachloride and tungsten pentachloride raw materials. There is provided a purified tungsten hexachloride and tungsten pentachloride containing less than 10 ppm, preferably less than 5 ppm, more preferably less than 1 ppm, and most preferably less than 0.5 ppm of iron and/or molybdenum; and less than 10 ppm, preferably less than 5 ppm of all other trace metals combined including but not limited to aluminum, potassium and sodium.

Condensable metal halide materials, such as but not limited to tungsten hexachloride and tungsten pentachloride can be used deposit films metal or metal containing films in a chemical vapor deposition (CVD) or atomic layer deposition process. Described herein are high purity tungsten hexachloride and tungsten pentachloride systems and methods to purify tungsten hexachloride and tungsten pentachloride raw materials. There is provided a purified tungsten hexachloride and tungsten pentachloride containing less than 10 ppm, preferably less than 5 ppm, more preferably less than 1 ppm, and most preferably less than 0.5 ppm of iron and/or molybdenum; and less than 10 ppm, preferably less than 5 ppm of all other trace metals combined including but not limited to aluminum, potassium and sodium.

The invention relates to a method for producing MoO.sub.2Cl.sub.2 under inert conditions, comprising the steps of: (i) charging a reaction vessel with MoO.sub.2, (ii) reacting the MoO.sub.2 with supplied Cl.sub.2 in the reaction vessel at a first temperature T.sub.1 to give gaseous MoO.sub.2Cl.sub.2, (iii) transferring the gaseous MoO.sub.2Cl.sub.2 into a receiving vessel, (iv) resublimating the gaseous MoO.sub.2Cl.sub.2 in the receiving vessel to give solid MoO.sub.2Cl.sub.2 at a second temperature T.sub.2 that is lower than T.sub.1, and (v) recovering solid MoO.sub.2Cl.sub.2 with a purity determined by ICP-OES/MS of 99.9996 wt. % or more.

The invention also relates to high-purity MoO.sub.2Cl.sub.2, the use thereof, and electronic components.

The invention relates to a method for producing MoO.sub.2Cl.sub.2 under inert conditions, comprising the steps of: (i) charging a reaction vessel with MoO.sub.2, (ii) reacting the MoO.sub.2 with supplied Cl.sub.2 in the reaction vessel at a first temperature T.sub.1 to give gaseous MoO.sub.2Cl.sub.2, (iii) transferring the gaseous MoO.sub.2Cl.sub.2 into a receiving vessel, (iv) resublimating the gaseous MoO.sub.2Cl.sub.2 in the receiving vessel to give solid MoO.sub.2Cl.sub.2 at a second temperature T.sub.2 that is lower than T.sub.1, and (v) recovering solid MoO.sub.2Cl.sub.2 with a purity determined by ICP-OES/MS of 99.9996 wt. % or more.

The invention also relates to high-purity MoO.sub.2Cl.sub.2, the use thereof, and electronic components.

An apparatus for manufacturing an organic material includes an outer tube including an internal accommodating space, and at least one loading inner tube and at least one collecting inner tube disposed in the accommodation space, the loading inner tube including a mesh boat disposed in a first direction in which the loading inner tube extends.