Patent classifications
B05D2350/00
THICKNESS-LIMITED ELECTROSPRAY DEPOSITION
Self-limiting electrospray compositions including a non-charge-dissipative component and/or a charge-dissipative component. Self-limiting electrospray composition including a plurality of charge-dissipative components and excluding a non-charge-dissipative component. Methods for forming layers of self-limiting thickness. Methods for determining a conductivity of a material. Methods for repairing a flaw in a layer on a surface of an object.
Coating for aluminum alloy aerostructures
An airfoil element including an airfoil having a pressure side and a suction side, an aluminum alloy substrate and a coating system atop the substrate, said coating comprising in at least one location an anodize layer (24) having a thickness (T.sub.A) of 1.0 to 5.0 micrometer, a sealant (36) filling at least 5.0% of porosity in the anodize layer or at least 0.7% of an apparent volume within a height of the anodize layer, a sealant primer (40) filling 50.0% of porosity in the anodize layer or at least 6.5% of an apparent volume within a height of the anodize layer and extending at least flush to the anodize layer, a second primer (44) over the sealant primer having a thickness (T.sub.S) of 5.0 to 50 micrometer and a polymeric coating (48) having a thickness (T.sub.T) of 10.0 micrometer to 1.0 millimeter.
Fabricating equipment for semiconductor device and method for fabricating semiconductor device
A fabricating equipment and method for a semiconductor device is provided. The fabricating equipment comprises a process chamber including an internal space, a substrate support which supports a substrate including a first film and a second film, inside the internal space, a nozzle which is placed on the substrate support and supplies a process gas, a first heater which is placed inside the substrate support and heats the substrate and a second heater which generates one of waves of a first frequency and waves of a second frequency to differentially heat the first film and the second film.
SYSTEMS AND METHODS FOR TREATING A SUBSTRATE
Disclosed herein are systems and methods for treating a metal substrate. The system includes a first pretreatment composition comprising a fluorometallic acid and free fluoride and having a pH of 1.0 to 4.0 and a second pretreatment composition comprising a Group IVB metal or a third pretreatment comprising a lanthanide series metal and an oxidizing agent. The method includes contacting at least a portion of a surface of the substrate with the first pretreatment composition and optionally contacting at least a portion of the substrate surface with the second pretreatment composition or the third pretreatment composition. Also disclosed are substrates treated with one of the systems or methods. Also disclosed are magnesium or magnesium alloy substrates comprising a bilayer comprising a first layer comprising silicon and a second layer comprising fluoride.