A device and method for protecting an optical sensor of a vehicle are disclosed, wherein the sensor is protected from environmental pollutants which may adhere to an optical surface of the sensor if the sensor is exposed to them, and wherein the environmental pollutants are kept away from the sensor by an ultrasonic cleaning of the sensor surface using an ultrasonic field. The ultrasonic field of the ultrasonic cleaning is emitted by a protection device into the air to provide a protection zone around the optical surface of the sensor such that a contact of the optical surface with the environmental pollutants is avoided, wherein the environmental pollutants are moved and/or destroyed in the air away from the sensor if they enter the protection zone), and wherein the protection zone provides a contactless cleaning of the sensor.

A chamber of a semiconductor fabrication facility may include a vent port diffuser. The vent port diffuser may include a first tube member configured to couple the vent port diffuser to a vent port of the chamber. The vent port diffuser may include a second tube member coupled to the first tube member. The second tube member may comprise a plurality of openings spaced along a length of the second tube member, with the plurality of openings configured to receive a fluid from the chamber. Based on the semiconductor fabrication facility including the vent port diffuser, the chamber may be configured to provide an improved flow field of a fluid within the chamber. In this way, the vent port diffuser may reduce defects of semiconductor devices transported through the chamber that might otherwise be caused by contaminants.

A chamber of a semiconductor fabrication facility may include a vent port diffuser. The vent port diffuser may include a first tube member configured to couple the vent port diffuser to a vent port of the chamber. The vent port diffuser may include a second tube member coupled to the first tube member. The second tube member may comprise a plurality of openings spaced along a length of the second tube member, with the plurality of openings configured to receive a fluid from the chamber. Based on the semiconductor fabrication facility including the vent port diffuser, the chamber may be configured to provide an improved flow field of a fluid within the chamber. In this way, the vent port diffuser may reduce defects of semiconductor devices transported through the chamber that might otherwise be caused by contaminants.

Described herein is a technique capable of cleaning a surrounding structure of a substrate placing surface in an apparatus. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a substrate mounting plate provided with a substrate non-placing surface and a plurality of substrate placing surfaces; a rotator configured to rotate the substrate mounting plate; a plasma generator configured to generate plasma such that a plasma density over the substrate non-placing surface is higher than a plasma density over the plurality of the substrate placing surfaces; a process gas supplier configured to supply a process gas into the process chamber; a cleaning gas supplier configured to supply a cleaning gas into the process chamber; and a heater placed below the substrate mounting plate.

Described herein is a technique capable of cleaning a surrounding structure of a substrate placing surface in an apparatus. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a substrate mounting plate provided with a substrate non-placing surface and a plurality of substrate placing surfaces; a rotator configured to rotate the substrate mounting plate; a plasma generator configured to generate plasma such that a plasma density over the substrate non-placing surface is higher than a plasma density over the plurality of the substrate placing surfaces; a process gas supplier configured to supply a process gas into the process chamber; a cleaning gas supplier configured to supply a cleaning gas into the process chamber; and a heater placed below the substrate mounting plate.

Methods and systems are provided for capless refueling system of a vehicle. In one example, a method may include cleaning a capless unit of a capless refueling system by generating vacuum in the capless refueling system and delivering compressed air to the capless unit from an electrical booster of an engine. The compressed air may be delivered to the capless unit via a two-way valve configured to control a flow path of the compressed air.

Methods and systems are provided for capless refueling system of a vehicle. In one example, a method may include cleaning a capless unit of a capless refueling system by generating vacuum in the capless refueling system and delivering compressed air to the capless unit from an electrical booster of an engine. The compressed air may be delivered to the capless unit via a two-way valve configured to control a flow path of the compressed air.

A cleaning method is provided. In the cleaning method, residues of elements of a group for a common semiconductor material in a chamber are removed with plasma of a halogen-containing gas. Residues of metal elements of groups 12 and 13 and groups 14 and 15 in the chamber are removed with plasma of a hydrocarbon-containing gas. A C-containing material in the chamber is removed with plasma of an O-containing gas. Further, the removing with the plasma of the halogen-containing gas, the removing with the plasma of the hydrocarbon-containing gas, and the removing with the plasma of the O-containing gas are performed in that order or the removing with the plasma of the hydrocarbon-containing gas, the removing with the plasma of the O-containing gas, and the removing with the plasma of the halogen-containing gas are performed in that order X times where X≥1.

A cleaning method is provided. In the cleaning method, residues of elements of a group for a common semiconductor material in a chamber are removed with plasma of a halogen-containing gas. Residues of metal elements of groups 12 and 13 and groups 14 and 15 in the chamber are removed with plasma of a hydrocarbon-containing gas. A C-containing material in the chamber is removed with plasma of an O-containing gas. Further, the removing with the plasma of the halogen-containing gas, the removing with the plasma of the hydrocarbon-containing gas, and the removing with the plasma of the O-containing gas are performed in that order or the removing with the plasma of the hydrocarbon-containing gas, the removing with the plasma of the O-containing gas, and the removing with the plasma of the halogen-containing gas are performed in that order X times where X≥1.

The present application discloses a preventive maintenance method for a chamber of a metal etching machine. An optimized burning cleaning recipe is added before the chamber is opened, and metal substances remaining on the surface of an electrostatic chuck are removed by adopting a cleaning/pumping down multi-step alternate method. Before the chamber is opened for preventive maintenance, the phenomenon of metal particles remaining on the surface of the electrostatic chuck can be significantly improved, thus solving the downtime problem caused by abnormal backside helium and ensuring the stability of mass production.