A high-entropy alloy having ultra-high strength and high hydrogen embrittlement resistance due to formation of a microstructure at a low strain may be produced without a severe plastic deformation. A method for producing the high-entropy alloy includes (a) annealing and homogenizing an initial alloy material at 1000 to 1200° C. for 1 to 24 hours; and (b) rolling the annealed and homogenized initial alloy material into a rod, at a cryogenic temperature of −100 to −200° C. while pressing the initial alloy material in multi-axial directions at a strain of 0.4 to 1.2, thereby to produce the high-entropy alloy having intersecting twins as a microstructure, and secondary fine twins formed in the intersecting twins, wherein the initial alloy material contains Co of 5 to 35%, Cr of 5 to 35%, Fe of 5 to 35%, Mn of 5 to 35%, and Ni of 5 to 35%, based on weight %.

The invention relates to a method for manufacturing a thin sheet made from aluminum-based alloy comprising, as % by weight, 2.2 to 2.7% Cu, 1.3 to 1.6% Li, less than 0.1% Ag, 0.2 to 0.5% Mg, 0.1 to 0.5% Mn, 0.01 to 0.15% Ti, a quantity of Zn of less than 0.3, a quantity of Fe and of Si of less than or equal to 0.1% each, and unavoidable impurities with a content of less than or equal to 0.05% by weight each and 0.15% by weight in total, the remainder aluminum, wherein optionally the hot-rolling input temperature being between 400° C. and 460° C. and the hot-rolling output temperature being less than 300° C. and the mean heating speed during the solution heat treatment is at least approximately 17° C./min between 300° C. and 400° C., aging conditions such that the yield strength in the long-transverse direction Rp0.2 is between 350 and 380 MPa.

The invention relates to a method for manufacturing a thin sheet made from aluminum-based alloy comprising, as % by weight, 2.2 to 2.7% Cu, 1.3 to 1.6% Li, less than 0.1% Ag, 0.2 to 0.5% Mg, 0.1 to 0.5% Mn, 0.01 to 0.15% Ti, a quantity of Zn of less than 0.3, a quantity of Fe and of Si of less than or equal to 0.1% each, and unavoidable impurities with a content of less than or equal to 0.05% by weight each and 0.15% by weight in total, the remainder aluminum, wherein optionally the hot-rolling input temperature being between 400° C. and 460° C. and the hot-rolling output temperature being less than 300° C. and the mean heating speed during the solution heat treatment is at least approximately 17° C./min between 300° C. and 400° C., aging conditions such that the yield strength in the long-transverse direction Rp0.2 is between 350 and 380 MPa.

Provided is a preparation method for an ultrahigh-conductivity multilayer single-crystal laminated copper material, where multiple layers of single-crystal copper foils are laminated together to form a laminate, and the laminate is pressurized and annealed as one piece by performing pressurizing and high-temperature annealing at the same time, or the laminate is pressed as one piece by means of direct hot rolling, thereby obtaining an ultrahigh-conductivity multi-layer single-crystal laminated copper material, whereby, according to the method, multiple layers of single-crystal copper foils are used as raw materials, an ultrahigh-conductivity multi-layer single-crystal laminated copper material is prepared by means of hot rolling or pressing and annealing, and the conductivity of the copper material is greater than or equal to 105% IACS.

Provided is a preparation method for an ultrahigh-conductivity multilayer single-crystal laminated copper material, where multiple layers of single-crystal copper foils are laminated together to form a laminate, and the laminate is pressurized and annealed as one piece by performing pressurizing and high-temperature annealing at the same time, or the laminate is pressed as one piece by means of direct hot rolling, thereby obtaining an ultrahigh-conductivity multi-layer single-crystal laminated copper material, whereby, according to the method, multiple layers of single-crystal copper foils are used as raw materials, an ultrahigh-conductivity multi-layer single-crystal laminated copper material is prepared by means of hot rolling or pressing and annealing, and the conductivity of the copper material is greater than or equal to 105% IACS.

A method for producing a hot-rolled titanium plate includes, [1] melting at least one part of the side surface of the titanium slab by radiating a beam or plasma toward the side surface, not toward the surface to be rolled, and thereafter causing re-solidification to form, in the side surface, a layer having grain diameter of 1.5 mm or less and a depth of 3.0 mm or more from the side surface; [2] performing a finishing process on the surface to be rolled of the titanium slab in which the layer is formed, to thereby bring a slab flatness index X to 3.0 or less; and [3] subjecting the titanium slab after the finishing process to hot rolling under a condition in which a length of an arc of contact of a roll L in a first pass of rough rolling is 230 mm or more.

A method for producing a hot-rolled titanium plate includes, [1] melting at least one part of the side surface of the titanium slab by radiating a beam or plasma toward the side surface, not toward the surface to be rolled, and thereafter causing re-solidification to form, in the side surface, a layer having grain diameter of 1.5 mm or less and a depth of 3.0 mm or more from the side surface; [2] performing a finishing process on the surface to be rolled of the titanium slab in which the layer is formed, to thereby bring a slab flatness index X to 3.0 or less; and [3] subjecting the titanium slab after the finishing process to hot rolling under a condition in which a length of an arc of contact of a roll L in a first pass of rough rolling is 230 mm or more.

To provide a chassis for a small electronic device that can be formed efficiently by drawing work with low cost, is hard to cause forming failure, and causes no damage on the surface thereof on forming to provide an excellent appearance. The rolled aluminum alloy laminated sheet material is for forming a chassis for a small electronic device by drawing work, and contains a rolled aluminum alloy sheet material having a 0.2% proof stress of 200 MPa or more, and a covering material laminated at least one surface of both surfaces of the rolled aluminum alloy sheet material, and the covering material contains any one of a synthetic resin film, and a laminated material containing a metal foil having synthetic resin films laminated on both surfaces thereof. The rolled aluminum alloy sheet material may have a fibrous crystalline structure extending in a direction perpendicular to a thickness direction thereof.

To provide a chassis for a small electronic device that can be formed efficiently by drawing work with low cost, is hard to cause forming failure, and causes no damage on the surface thereof on forming to provide an excellent appearance. The rolled aluminum alloy laminated sheet material is for forming a chassis for a small electronic device by drawing work, and contains a rolled aluminum alloy sheet material having a 0.2% proof stress of 200 MPa or more, and a covering material laminated at least one surface of both surfaces of the rolled aluminum alloy sheet material, and the covering material contains any one of a synthetic resin film, and a laminated material containing a metal foil having synthetic resin films laminated on both surfaces thereof. The rolled aluminum alloy sheet material may have a fibrous crystalline structure extending in a direction perpendicular to a thickness direction thereof.

A method for making a three-dimensional hierarchical layered porous copper, the method includes providing a copper-zinc alloy precursor being composed of a β′ phase and a γ phase, and treating the copper-zinc alloy precursor by electrochemical dealloying. The present application further provides a three-dimensional hierarchical layered porous copper including a first surface layer, an intermediate layer, and a second surface layer stacked in that order. The first surface layer includes a plurality of micron-scale pores and a plurality of first nanoscale pores. The intermediate layer includes a plurality of second nanoscale pores. The second surface layer includes the plurality of micron-scale pores and the plurality of first nanoscale pores.