A program editing device edits a machining program in which a machining path along which a wire electrode of a wire electrical discharge machine machines a workpiece is defined. The machining program includes a plurality of blocks corresponding to respective multiple partial paths into which the machining path is divided, each of the blocks including path information indicating the corresponding partial path. The program editing device includes an analyzer analyzing the machining program and thereby identifying a predetermined shape pattern formed by a series of the multiple partial paths in the machining path, an information generator generating shape information corresponding to the identified predetermined shape pattern, and an editor inserting the shape information into the machining program.

A method of micro machining a workpiece; a micro machining apparatus and a micro machined workpiece. The method includes the steps of laser cutting a test bore in a test piece using a laser beam; measuring the test bore using either a measurement probe or an electrode; correlating the electrode to the laser beam; laser ablating the surface the workpiece in a first region; and electrical discharge machining the workpiece in the first region to produce at least one bore in the workpiece. The workpiece has a surface coating and at least one bore, wherein the bore passes through the surface coating with a diameter that is within 0.3 mm of the diameter of the bore in the remainder of the workpiece.

A system is disclosed as including a seal for sealing an area between a hanger and a housing of a wellhead. The seal is provided with at least a notch that defines at least a movable portion such as a wing or a lip. An e-ring is provided for a first energizing of the seal. The movable portion enables pressurized fluid from beneath the seal to cause the movable portion to protrude further against a mating side in the wellhead and the hanger for a second energizing of the seal. This type of seal maintains or improves the sealing of the wellhead in high pressure applications. Methods applied to the above seal are also disclosed.

A system is disclosed as including a seal for sealing an area between a hanger and a housing of a wellhead. The seal is provided with at least a notch that defines at least a movable portion such as a wing or a lip. An e-ring is provided for a first energizing of the seal. The movable portion enables pressurized fluid from beneath the seal to cause the movable portion to protrude further against a mating side in the wellhead and the hanger for a second energizing of the seal. This type of seal maintains or improves the sealing of the wellhead in high pressure applications. Methods applied to the above seal are also disclosed.

A turbine vane for a gas turbine engine having a plurality of cooling holes defined therein is provided. The plurality of cooling holes provide fluid communication to a surface of the turbine vane, the plurality of cooling holes including holes noted by the following coordinates: TVA, TVB, TVC, TVD and TVE of Table 1.

A turbine vane for a gas turbine engine having a plurality of cooling holes defined therein is provided. The plurality of cooling holes provide fluid communication to a surface of the turbine vane, the plurality of cooling holes including holes noted by the following coordinates: TVA, TVB, TVC, TVD and TVE of Table 1.

Provided is a wire electric discharge machine in which workpiece attaching and detaching unit attaches and detaches a workpiece to and from workpiece fixing unit, machining-reference-part detecting unit detects the position of a machining reference part of the workpiece, workpiece-positioning executing unit positions the workpiece in a position where the workpiece does not collide with machining-reference-part measuring unit, measurement-positioning executing unit positions the machining-reference-part measuring unit in a predetermined measurement start position, the machining-reference-part measuring unit measures the position of the machining reference part of the workpiece, and machining-reference-part-measurement executing unit executes a position measuring operation for the machining reference part of the workpiece using the machining-reference-part measuring unit.

Provided is a wire electric discharge machine in which workpiece attaching and detaching unit attaches and detaches a workpiece to and from workpiece fixing unit, machining-reference-part detecting unit detects the position of a machining reference part of the workpiece, workpiece-positioning executing unit positions the workpiece in a position where the workpiece does not collide with machining-reference-part measuring unit, measurement-positioning executing unit positions the machining-reference-part measuring unit in a predetermined measurement start position, the machining-reference-part measuring unit measures the position of the machining reference part of the workpiece, and machining-reference-part-measurement executing unit executes a position measuring operation for the machining reference part of the workpiece using the machining-reference-part measuring unit.

An electrical discharge machining method includes a step of selectively immersing only a portion of a workpiece in an electrical discharge machining liquid such that a machining object portion included in the portion of the workpiece is opposed to an electrode immersed in the electrical discharge machining liquid and a step of applying an electrical discharge machining to the machining object portion by applying a voltage between the electrode and the workpiece in a state where the portion of the workpiece is selectively immersed in the electrical discharge machining liquid, the portion including the machining object portion.

A method of structuring and/or thinning a semiconductor wafer having a plurality of functional chip sites includes forming one or more semiconductor devices in a device region of each functional chip site at a frontside of the semiconductor wafer, and forming an electrode at one of the frontside or a backside of the semiconductor wafer. The side of the semiconductor wafer at which the electrode is formed is structured by applying voltage pulses between the electrode and a tool electrode positioned above the semiconductor wafer as part of an electrical discharge machining (EDM) process before the electrode is removed by the EDM process, and between the tool electrode and an intrinsic conductive layer formed on the side of the semiconductor wafer being structured after the electrode is removed by the EDM process.