Patent classifications
H10F71/00
Preventing harmful polarization of solar cells
In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.
Solar cell with reduced absorber thickness and reduced back surface recombination
Manufacture of an improved stacked-layered thin film solar cell. The solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.
Optical sensing device and fabricating method thereof
An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.
Optoelectronic component and method of producing an optoelectronic component
An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.
SOLAR BATTERY MODULE AND MANUFACTURING METHOD THEREFOR
A solar battery module and manufacturing method for a solar battery module having improved output are provided. The solar battery module 1 is a transparent substrate 10, transparent resin layer 13b, solar battery cell 12, colored resin layer 13a and back sheet 11 laminated in this order. The light-receiving surface 12a of the solar battery cell 12 faces the transparent resin layer 13b side. The backside 12b of the solar battery cell faces the colored resin layer 13a. The MFR [melt flow rate] of the transparent resin layer 13b is lower than the MFR of the colored resin layer 13a.
PROCESS MODULE FOR INCREASING THE RESPONSE OF BACKSIDE ILLUMINATED PHOTOSENSITIVE IMAGERS AND ASSOCIATED METHODS
Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
Edgelit Multi-Panel Lighting System
A lighting system can include a lightguide having an edge and two major surfaces. The lightguide can be mounted in a frame so that one of the major surfaces faces towards an area to be illuminated, while the other major surface faces away from the area. LEDs can couple light into the lightguide edge, with the coupled light emitting from both major surfaces. Light emitted from the major surface that faces away from the area to be illuminated can be reflected back into the lightguide by a reflective surface. The reflective surface can be separated from the lightguide by an air gap. The air gap can promote internal reflection at the major surface facing away from the area to be illuminated, thereby enhancing homogeneity and output of light towards the area to be illuminated. The frame can include integral wireways, reflector retention clips, and grounding circuitry.
NANO-ELECTRODE MULTI-WELL HIGH-GAIN AVALANCHE RUSHING PHOTOCONDUCTOR
Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacent nano-pillars, and a method for operation thereof.
MECHANISMS FOR FORMING IMAGE SENSOR DEVICE WITH DEEP-TRENCH ISOLATION STRUCTURE
An image-sensor device is provided. The image-sensor device includes a semiconductor substrate and a radiation-sensing region in the semiconductor substrate. The image-sensor device also includes a doped isolation region adjacent to the radiation-sensing region. The image-sensor device further includes a dielectric film extending into the doped isolation region from a surface of the semiconductor substrate. A portion of the doped isolation region is between the dielectric film and the radiation-sensing region.
INTEGRATED PHOTOSENSITIVE FILM AND THIN LED DISPLAY
A system to configure a conductive pathway and a method of forming a system of configurable conductivity pathways include a photosensitive layer that becomes conductive based on photoexcitation, and a light source layer deposited over the photosensitive layer, the light source layer selectively providing the photoexcitation to the photosensitive layer. The system further includes a controller to control the light source layer, the controller illuminating a portion of the light source layer corresponding with a user input image to photoexcite the photosensitive layer and configure the conductive pathway in the photosensitive layer according to the image.