Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.

A packaged chip assembly with a semiconductor substrate, a semiconductor device integrally formed on or in the substrate's top surface, and first bond pads at the substrate's top surface electrically coupled to the semiconductor device. A second substrate includes a first aperture and one or more second apertures extending therethrough, second and third bond pads at the second substrate's top and bottom surfaces, respectively, and conductors electrically coupled to the second and third bond pads. The semiconductor substrate's top surface is secured to the second substrate's bottom surface such that the semiconductor device is aligned with the first aperture, and each of the first bond pads is aligned with one of the second apertures. A plurality of wires are each electrically connected between one of the first bond pads and one of the second bond pads and each passing through one of the one or more second apertures.

Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.

Systems for reducing dark current in a photodiode include a heater configured to heat a photodiode above room temperature. A reverse bias voltage source is configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode.

A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.

A photodetector with a plasmon structure includes a semiconductor substrate, a plurality of light-receiving elements that are formed in a predetermined pattern, protruding from the semiconductor substrate, and a nanostructure that is placed in contact with a surface of the semiconductor substrate among the light-receiving elements and which induces a plasmon phenomenon thereon.

Thermal compression bonding approaches for foil-based metallization of solar cells, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes placing a metal foil over a metalized surface of a wafer of the solar cell. The method also includes locating the metal foil with the metalized surface of the wafer. The method also includes, subsequent to the locating, applying a force to the metal foil such that a shear force appears between the metal foil and the metallized surface of the wafer to electrically connect a substantial portion of the metal foil with the metalized surface of the wafer.

A radiation sensor includes a fin structure including semiconductor material formed on a substrate, a gate formed on an inner side of the fin structure, and a charge collector dielectric layer formed on an outer side of the fin structure.

A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.

A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.