A multilayer thin-film structure has a layered structure with an alternative stacking series of a first layer of a first oxide semiconductor and a second layer of a second oxide semiconductor different from the first oxide semiconductor, wherein the layered structure has one or more band gaps including a range of 1.3 eV to 1.5 eV.

A high efficiency configuration for a solar cell module comprises solar cells arranged in an overlapping shingled manner and conductively bonded to each other in their overlapping regions to form super cells, which may be arranged to efficiently use the area of the solar module.

Disclosed are a solar cell and a method of manufacturing the same. The solar cell with a graphene-silicon quantum dot hybrid structure according to an embodiment of the present disclosure includes a hybrid structure including a silicon quantum dot layer, in which a silicon oxide layer includes a plurality of silicon quantum dots; a doped graphene layer formed on the silicon quantum dot layer, and an encapsulation layer formed on the doped graphene layer; and electrodes formed on upper and lower parts of the hybrid structure.

A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material has a thickness that is no greater than 50 nm.

An optical sensor device comprises an element-mounting portion, an optical sensor element provided on the element-mounting portion, a lead having a first contact region connected to the optical sensor element and a second contact region for an external connection, and a resin-encapsulating portion which covers at least a light-receiving plane of the optical sensor element. The resin-encapsulating portion comprises a resin and a glass filler including borosilicate glass dispersed in the resin. The transmissivity of the resin-encapsulating portion in one example is equal to or more than 40% in a wavelength range between 300 nm to 400 nm, and in another example is equal to or more than 60% in a wavelength range between 300 nm and 350 nm.

Process for manufacturing a photovoltaic module placed on an emissive display device, said photovoltaic module comprising an array containing a plurality of photovoltaic cells and a plurality of transparent zones called orifices, and said photovoltaic module comprising an array of optical elements able to focus, by refraction or reflection, the light emitted by the device into the orifices.

A photovoltaic cell element includes a photovoltaic cell substrate configured to generate electrons upon reception of a light radiation, an outer boundary and an inner boundary delimiting the substrate. The element has no material outside the outer boundary and inside the inner boundary, and the substrate has a primer trench formed at least partially over the surface of the substrate.

The present disclosure relates to a solar cell, a sliced cell and a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conductive layer, a third passivation film layer, and a second dielectric layer; the doped conductive layer and the second dielectric layer being sequentially stacked on a first surface of the substrate; the third passivation film layer being stacked on a second surface of the substrate; and the first surface and the second surface of the substrate being arranged opposite to each other; wherein the substrate further includes a plurality of first side surfaces adjacent between the first surface and the second surface; and the third passivation film layer further covers at least part of surfaces of the plurality of first side surfaces. The solar cell, the photovoltaic module, and the photovoltaic system in the present disclosure can reduce recombination losses at side edges of the solar cell and improve efficiency.

An electronic device includes a light source, a light receiver, a first light guide structure, and a second light guide structure. The first light guide structure faces a light emitting surface of the light source and faces a lateral wall of the light receiver. The second light guide structure is disposed over the light receiver and coupled to the first light guide structure. The light receiver and the second light guide structure defines a cavity between the light receiver and the second light guide structure.

The present disclosure provides an avalanche photodetector and a preparation method therefor. The avalanche photodetector comprises: a substrate, the surface of which comprises a first semiconductor layer; and a second semiconductor layer located on the substrate, wherein the first semiconductor layer comprises a first P-type doped region, a second P-type doped region, a third N-type doped region, a first intrinsic region, a third P-type doped region, a second intrinsic region, a second N-type doped region and a first N-type doped region which are sequentially arranged in a first direction, the dopant concentrations of the first to third P-type doped regions are sequentially decreased, the dopant concentrations of the first to third N-type doped regions are sequentially decreased, and the first direction is an electron flow direction; the second semiconductor layer sequentially covers part of the second P-type doped region, the third N-type doped region, the first intrinsic region and the third P-type doped region in the first direction; the first N-type doped region is connected to a first electrode; the third P-type doped region is connected to a second electrode; and the first N-type doped region is connected to a third electrode.