Thermocompression bonding approaches for foil-based metallization of non-metal surfaces of solar cells, and the resulting solar cells, are described. For example, a solar cell includes a substrate and a plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of alternating N-type and P-type semiconductor regions. Each conductive contact structure includes a metal foil portion disposed in direct contact with a corresponding one of the alternating N-type and P-type semiconductor regions.

A semiconductor package includes a first die comprising an optical coupler, a second die bonded to the first die, and a substrate over the first die. The substrate includes a first portion, a second portion at least partially overlapped with the optical coupler from a top view, and a third portion between the first portion and the second portion. A first top surface of the first portion, a second top surface of the second portion and a third top surface of the third portion are at different surface levels.

A solar cell can include a first plurality of metal contact fingers, and a second plurality of metal contact fingers interdigitated with the first plurality of metal contact fingers, wherein at least one of the first plurality of metal contact fingers comprises a wrap-around metal finger that passes between a first edge of the solar cell and at least one contact pads. A photovoltaic (PV) string including a solar cell with a wrap-around metal contact finger. A method of coupling an electrically conductive connector to a solar cell with a wrap-around metal contact finger.

Provided are an ink composition, a light-emitting apparatus using the ink composition, and a method of manufacturing the light-emitting apparatus. The ink composition may include a light-emitting device, a solvent, and an organic thickener, and the organic thickener is a polymeric compound including at least one group represented by Formula 1: ##STR00001## wherein in Formula 1, X, R.sub.1, n1, and R.sub.2 may respectively be understood by referring to the descriptions of X, R.sub.1, n1, and R.sub.2 provided in the detailed description.

Aligned metallization approaches for fabricating solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a semiconductor layer over a semiconductor substrate. A first plurality of discrete openings is in the semiconductor layer and exposes corresponding discrete portions of the semiconductor substrate. A plurality of doped regions is in the semiconductor substrate and corresponds to the first plurality of discrete openings. An insulating layer is over the semiconductor layer and is in the first plurality of discrete openings. A second plurality of discrete openings is in the insulating layer and exposes corresponding portions of the plurality of doped regions. Each one of the second plurality of discrete openings is entirely within a perimeter of a corresponding one of the first plurality of discrete openings. A plurality of conductive contacts is in the second plurality of discrete openings and is on the plurality of doped regions.

A method for efficiently sealing the back of photovoltaic modules as part of a repair. The photovoltaic modules pass through several process stages one after another, beginning with a selection of repairable photovoltaic modules, their anonymization and cleaning, followed by further process stages. The further process steps include drying, coating, and treating the coating with pulsed infrared radiation. The process is completed with a check of the process and a functional test using a flash test. The process conditions and apparatus configurations in the process stages are described in detail.

To improve the measurement accuracy. The present technology provides a light receiving device (1) including: a light transmitting part (11) that transmits emitted light emitted from a light emitting device; a light receiver (12) that receives incident light from outside; and a semiconductor substrate (13), in which a non-sensitive region (14) that does not sense light is formed between the light transmitting part (11) and the light receiver (12). Moreover, the present technology provides a manufacturing method for a light receiving device (1) including: stacking a light receiver (12) on one surface of a semiconductor substrate (13); etching a side on which the light receiver (12) is disposed into a ring shape; fixing the semiconductor substrate (13) to a permanent fixing substrate; etching an outer periphery and substantially a center portion of the light receiver (12); and removing the semiconductor substrate (13) from the permanent fixing substrate by laser lift off.

Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

Provided is a photoelectric conversion module capable of improving bonding strength between photoelectric conversion elements adjacent to each other. The photoelectric conversion module (100) comprises a first photoelectric conversion element (10a) including a collector electrode (30a) and a second photoelectric conversion element (10b) including a conductive substrate (20b). The first photoelectric conversion element (10a) and the second photoelectric conversion element (10b) are arranged side by side so as to partially overlap each other. The photoelectric conversion module comprises a conductor (200) electrically connecting the collector electrode (30a) of the first photoelectric conversion element (10a) and the conductive substrate (20b) of the second photoelectric conversion element (10b) to each other. The conductor (200) is provided from a region of the collector electrode (30a) of the first photoelectric conversion element (10a) to a region outside the collector electrode (30a).

A photodetector including a substrate having a semiconductor material layer, such as a silicon-containing layer, and a germanium-based well embedded in the semiconductor material layer, where a gap is located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer. The gap between the lateral side surface of the germanium-based well and the surrounding semiconductor material layer may reduce the surface contact area between the germanium-containing material of the well and the surrounding semiconductor material, which may be a silicon-based material. The formation of the gap located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer may help minimize the formation of crystal defects, such as slips, in the germanium-based well, and thereby reduce the dark current and improve photodetector performance.