A photovoltaic module and a method for manufacturing photovoltaic module. The photovoltaic module includes a solar cell, a pad, fasteners, and a solder strip. The pad is arranged on the solar cell and includes first, second, and third parts, the first part is connected to the third part through the second part, and along a length direction of the solder strip, a width of the second part is less than a width of the first part and a width of the third part. The fasteners are arranged on a side of the first part facing away from the solar cell and a side of the third part facing away from the solar cell, the solder strip is provided between the fastener in the first part and the fastener in the third part, and the solder strip is connected to the pad through the fastener to form a solar cell string.

A method of baking a detector, the method comprising: placing a mid-wave infrared detector in an environmental chamber, wherein the environmental chamber is opaque. The mid-wave infrared detector comprises an anode, a guard terminal, and a cathode. The method further comprising connecting the anode to the cathode in a short circuit configuration, heating the environmental chamber to a bake temperature selected in the range of 60 to 70 degrees Celsius, and maintaining the detector in the environmental chamber for a period selected in the range of 72 hours to 240 hours.

A photoconductive transducer intended to generate or detect waves in the terahertz frequency domain or in the picosecond pulse domain is provided. The transducer comprises a three-dimensional structure that includes, in this order, a first planar electrode, an array of nano-columns embedded in a layer of resist and a second planar electrode parallel to the first planar electrode. The design of the transducer increases the optical-to-terahertz conversion efficiency by means of photonic and plasmonic resonances and by means of high and homogeneous electric fields. The height of the nano-columns as well as the thickness of the resist range between 100 nanometres and 400 nanometres. The width of the nano-columns is between 100 nanometres and 400 nanometres, the distance between two adjacent nano-columns is between 300 nanometres and 500 nanometres, the nano-columns are made of a III-V semiconductor. The second electrode is transparent, so as to allow the transmission of a laser source towards the photo-absorbing nano-columns.

An infrared detector and a method for forming it are provided. The detector includes absorber, barrier, and contact regions. The absorber region includes a first semiconductor material, with a first lattice constant, that produces charge carriers in response to infrared light. The barrier region is disposed on the absorber region and comprises a superlatice that includes (i) first barrier region layers comprising the first semiconductor material, and (ii) second barrier region layers comprising a second semiconductor material, different from, but lattice matched to, the first semiconductor material. The first and second barrier region layers are alternatingly arranged. The contact region is disposed on the barrier region and comprises a superlattice that includes (i) first contact region layers comprising the first semiconductor material, and (ii) second contact region layers comprising the second semiconductor material layer. The first and second contact region layers are alternatingly arranged.

To provide a solar cell module excellent in design property and weather resistance, a method for producing it, and a building exterior wall material using it. The solar cell module of the present invention comprises, from the light-receiving surface side of the solar cell module, a cover glass, a first encapsulant layer, a design layer, a second encapsulant layer and solar cells in this order, the first encapsulant layer contains an ultraviolet absorber, the first encapsulant layer has a thickness of from 50 to 2,000 m, and the design layer contains a fluororesin.

A protective coating for solar cells and the method of its making. The coating consists of four sub-coatings: the first, second, and the third polymer nanocomposite coatings and the optical anti-reflection coating on the top. The anti-reflection coating minimizes the reflection of the incident sun light and is made by embedding silica nanoparticles in the third coating. The third coating protects the solar cell for the low-orbit atomic oxygen and transmits the sunlight further down. The second polymer nanocomposite coating is composed of a colorless polymer embedded with the nanoparticles of a compound absorbing sun UV radiation and converting it into visible and NIR radiation suitable for generating electricity by the cell. The first nanocomposite layer is made of a colorless polymer nanocomposite blocking the residual harmful UV and atomic oxygen from reaching the cell and shortening its operational lifetime.

The present invention discloses a back contact solar cell. The back contact solar cell includes a semiconductor substrate having a front surface and a rear surface; a first conductive type semiconductor region having a first conductive type and a second conductive type semiconductor region having a second conductive type at an interval on the rear surface of the semiconductor substrate. Furthermore, the rear surface of the semiconductor substrate has a texturing structure at the interval between the first conductive type semiconductor region and the second conductive type semiconductor region.

A method of fabricating multijunction solar cell including an upper solar subcell and having an emitter of p conductivity type with a first band gap, and a base of n conductivity type with a second band gap greater than the first band gap; a lower solar subcell disposed below the upper solar subcell having an emitter of p conductivity type with a third band gap, and a base of n conductivity type with a fourth band gap greater than the third band gap; and an intermediate grading interlayer disposed between the upper and lower solar subcells and having a graded lattice constant that matches the upper first subcell on a first side and the second solar subcell on the second side opposite the first side, and having a fifth band gap that is greater than the second band gap of the upper solar subcell.

The disclosure provides a solar cell and a back contact structure thereof, a photovoltaic module, and a photovoltaic system. The back contact structure includes a first doped region having an opposite polarity to a silicon substrate and a second doped region having a same polarity as the silicon substrate. An isolation region is arranged between the first doped region and the second doped region. The protective region arranged on the first doped region includes an insulation layer and a third doped layer having a same polarity as the second doped region. An opening is provided in the protective region to connect the first conductive layer to the first doped region. In the present invention, scratches caused by belt transmission in an existing cell fabrication process is resolved.

A method includes forming, on a substrate by performing physical vapor deposition in vacuum, an absorber layer including copper (Cu), indium (In), gallium (Ga) and selenium (Se), forming a stack including the substrate and an oxygen-annealed absorber layer by performing in-situ oxygen annealing of the absorber layer to improve quantum efficiency of the image sensor by passivating selenium vacancies due to dangling bonds, and forming a cap layer over the oxygen-annealed absorber layer by performing physical vapor deposition in vacuum. The cap layer includes at least one of: Ga.sub.2O.sub.3.Math.Sn, ZnS, CdS, CdSe, ZnO, ZnSe, ZnIn.sub.2Se.sub.4, CuGaS.sub.2, In.sub.2S.sub.3, MgO, or Zn.sub.0.8Mg.sub.0.2O.