A method includes forming, on a substrate by performing physical vapor deposition in vacuum, an absorber layer including copper (Cu), indium (In), gallium (Ga) and selenium (Se), forming a stack including the substrate and an oxygen-annealed absorber layer by performing in-situ oxygen annealing of the absorber layer to improve quantum efficiency of the image sensor by passivating selenium vacancies due to dangling bonds, and forming a cap layer over the oxygen-annealed absorber layer by performing physical vapor deposition in vacuum. The cap layer includes at least one of: Ga.sub.2O.sub.3.Math.Sn, ZnS, CdS, CdSe, ZnO, ZnSe, ZnIn.sub.2Se.sub.4, CuGaS.sub.2, In.sub.2S.sub.3, MgO, or Zn.sub.0.8Mg.sub.0.2O.

The present disclosure provides a detection substrate, a method for manufacturing the same and a flat panel detector. The detection substrate includes a base substrate and at least one pixel unit, the pixel unit includes: a transistor, an oxide layer, a reading electrode, and a photoelectric conversion structure sequentially arranged in a direction away from the base substrate, the reading electrode is electrically connected with the photoelectric conversion structure, the oxide layer is positioned between the transistor and the reading electrode, the oxide layer has a first through hole therein, an orthographic projection of the oxide layer on the base substrate at least covers that of the transistor on the base substrate, the reading electrode is electrically connected with the transistor through the first through hole, orthographic projections of the first through hole and the transistor on the base substrate are not overlapped with each other.

A solar cell module with interconnect wires wire-bonded to back-contact solar cells. A solar cell module using an interconnect board to electrical interconnect back-contact solar cells. The interconnect board may also contain a bypass diode and circuitry to connect the bypass diode to solar cells of the module.

A photoelectric conversion element includes a first semiconductor region of a first conductivity type provided in contact with a first face of a semiconductor layer, a second semiconductor region of a second conductivity type provided closer to a second face of the semiconductor layer than the first semiconductor region, and a third semiconductor region provided closer to the second face than the second semiconductor region. The first semiconductor region and the second semiconductor region constitute an avalanche photodiode, and the avalanche photodiode is configured to multiply a signal charge generated in the third semiconductor region. A width in a depth direction of a region having an effective impurity density of 110.sup.16 cm.sup.3 or more of the second semiconductor region is 0.5 m or less.

A recycling method is applied to a solar cell module which includes a cover glass, an electric cell layer, and a sealing material which closely adheres the cover glass and the electric cell layer. The recycling method includes heating an interface between the cover glass and the sealing material to a prescribed temperature range; and applying a force from a side surface of the solar cell module to the sealing material with the interface maintained at the prescribed temperature range, to peel off the sealing material and the electric cell layer from the interface thereof.

In a thin film photoelectric conversion device fabricated by addition of a catalyst element with the use of a solid phase growth method, defects such as a short circuit or leakage of current are suppressed. A catalyst material which promotes crystallization of silicon is selectively added to a second silicon semiconductor layer formed over a first silicon semiconductor layer having one conductivity type, the second silicon semiconductor layer is partly crystallized by a heat treatment, a third silicon semiconductor layer having a conductivity type opposite to the one conductivity type is stacked, and element isolation is performed at a region in the second silicon semiconductor layer to which a catalyst material is not added, so that a left catalyst material is prevented from being diffused again, and defects such as a short circuit or leakage of current are suppressed.

A homogeneous coating solution for forming a light-absorbing layer of a solar cell, the homogeneous solution including: at least one metal or metal compound selected from the group consisting of a group 11 metal, a group 13 metal, a group 11 metal compound and a group 13 metal compound; a Lewis base solvent; and a Lewis acid.

Photovoltaic cells, photovoltaic devices, and methods of fabrication are provided. The photovoltaic cells include a transparent substrate to allow light to enter the photovoltaic cell through the substrate, and a light absorption layer associated with the substrate. The light absorption layer has opposite first and second surfaces, with the first surface being closer to the transparent substrate than the second surface. A passivation layer is disposed over the second surface of the light absorption layer, and a plurality of first discrete contacts and a plurality of second discrete contacts are provided within the passivation layer to facilitate electrical coupling to the light absorption layer. A first electrode and a second electrode are disposed over the passivation layer to contact the plurality of first discrete contacts and the plurality of second discrete contacts, respectively. The first and second electrodes include a photon-reflective material.

In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.

The present disclosure relates to a method of making an optical assembly. An optical device is secured in a fixture, the optical device having an optical surface, wherein a silicone film is positioned with respect to the optical surface, the silicone film having a distal surface relative to the optical surface. The method includes, among other features, imprinting the distal surface of the silicone film to create a surface imprint in the distal surface of the silicone film.