A method for improving alignment between a selective emitters and metal printing, including: providing silicon wafer including first edge and midline parallel to the first edge; texturing and diffusing surface of the silicon wafer; and illuminating the surface of the silicon wafer by laser spots to form the SE. Multiple laser spots are arranged between the first edge and the midline to form spot rows, extension directions of the spot rows are parallel to the first edge, M spot rows are arranged and M is a positive integer and M>1. The M spot rows include N sub-spot regions, N is a positive integer and 1<NM, the sub-spot regions include at least one spot row, and areas of the laser spots in each sub-spot region are equal. The areas of the laser spots in different sub-spot regions from the midline pointing to the first edge gradually increases.

A device comprises a solenoid of reinforced HTS material, wherein the solenoid of reinforced HTS material comprises a plurality continuous ordered fibers embedded in a high temperature superconducting material. A device comprises one or more coils, wherein the one or more coils comprise HTS solenoids; an armature coupled to a stem in a control valve, wherein the armature comprises a HTS solenoid; and coolant access paths, wherein the coolant access paths enable cooling the one or more coils and the armature. A device comprises a photovoltaic cell; and a parallel array of HTS solenoids, wherein the parallel array of HTS solenoids is coupled to the photovoltaic cell.

A device comprises a solenoid of reinforced HTS material, wherein the solenoid of reinforced HTS material comprises a plurality continuous ordered fibers embedded in a high temperature superconducting material. A device comprises one or more coils, wherein the one or more coils comprise HTS solenoids; an armature coupled to a stem in a control valve, wherein the armature comprises a HTS solenoid; and coolant access paths, wherein the coolant access paths enable cooling the one or more coils and the armature. A device comprises a photovoltaic cell; and a parallel array of HTS solenoids, wherein the parallel array of HTS solenoids is coupled to the photovoltaic cell.

The present disclosure provides an integrated circuit (IC) structure with a solar cell and an image sensor array. An integrated structure according to the present disclosure includes a first substrate including a plurality of photodiodes, an interconnect structure disposed on the first substrate, a first bonding layer disposed on the interconnect structure, a second bonding layer disposed on the first bonding layer, a second substrate disposed on the second bonding layer, and a transparent conductive oxide layer disposed on the second substrate.

A device comprises a tube with a tube HTS solenoid, wherein a projectile in a sabot comprising a sabot HTS solenoid. A method comprises disposing a seed HTS crystal on a growing crystal in contact with an a-b plane of the seed HTS crystal to grow the growing crystal, wherein the a-b plane is perpendicular to a c-axis. A method comprises disposing a seed HTS crystal on a growing crystal in contact with a b-c plane of the seed HTS crystal to grow the growing crystal, wherein the b-c plane is perpendicular to an a-axis. A device comprises a reinforced HTS material in a graphene casing, wherein the HTS in the graphene casing includes a cooling channel and a return channel.

A device comprises a tube with a tube HTS solenoid, wherein a projectile in a sabot comprising a sabot HTS solenoid. A method comprises disposing a seed HTS crystal on a growing crystal in contact with an a-b plane of the seed HTS crystal to grow the growing crystal, wherein the a-b plane is perpendicular to a c-axis. A method comprises disposing a seed HTS crystal on a growing crystal in contact with a b-c plane of the seed HTS crystal to grow the growing crystal, wherein the b-c plane is perpendicular to an a-axis. A device comprises a reinforced HTS material in a graphene casing, wherein the HTS in the graphene casing includes a cooling channel and a return channel.

Provided are a transparent electrode that can be manufactured at a low temperature, has low sheet resistance, is highly transmissive and lightweight, and allows realization of a flexible solar cell, large-area illumination, and the like, a preparing method of the transparent electrode, and an electronic device using the transparent electrode. A transparent electrode according to an embodiment has a network of silver nanowires. The transparent electrode includes a silver nanowire having a minimum curvature radius r of a curve of 2 m or less and a bending angle of 90 or more, and a compound having a boiling point of 160 C. or lower and an alkynyl group and a hydroxy group.

Provided are a transparent electrode that can be manufactured at a low temperature, has low sheet resistance, is highly transmissive and lightweight, and allows realization of a flexible solar cell, large-area illumination, and the like, a preparing method of the transparent electrode, and an electronic device using the transparent electrode. A transparent electrode according to an embodiment has a network of silver nanowires. The transparent electrode includes a silver nanowire having a minimum curvature radius r of a curve of 2 m or less and a bending angle of 90 or more, and a compound having a boiling point of 160 C. or lower and an alkynyl group and a hydroxy group.

A method for producing an HTS crystal comprises disposing a seed HTS crystal on a growing crystal in contact with an a-b plane of the seed HTS crystal to grow the growing crystal, wherein the a-b plane is perpendicular to a c-axis. Another method for producing an HTS crystal comprises disposing a seed HTS crystal on a growing crystal in contact with a b-c plane of the seed HTS crystal to grow the growing crystal, wherein the b-c plane is perpendicular to an a-axis.

A method for producing an HTS crystal comprises disposing a seed HTS crystal on a growing crystal in contact with an a-b plane of the seed HTS crystal to grow the growing crystal, wherein the a-b plane is perpendicular to a c-axis. Another method for producing an HTS crystal comprises disposing a seed HTS crystal on a growing crystal in contact with a b-c plane of the seed HTS crystal to grow the growing crystal, wherein the b-c plane is perpendicular to an a-axis.