A solar cell and a photovoltaic module are disclosed. The photovoltaic module includes a substrate, busbars, and at least one marker. The busbars are arranged on a same side of the substrate, and include at least a first busbar and a second busbar, the first busbar and the second busbar have opposite polarities, the first busbar has a first pad, the second busbar has a second pad, the first pad and the second pad are arranged sequentially along a straight line parallel to an arrangement direction of the busbars, and a distance from a marker to the first pad is different from a distance from a same marker to the second pad.

A device includes a detector, a sensing pad, a ring structure, a control circuit, a first transistor, and a second transistor. The sensing pad is electrically connected to the detector. The ring structure is over the sensing pad and includes an upper conductive ring and a lower conductive ring between the upper conductive ring and the sensing pad. The first transistor interconnects the upper conductive ring and the control circuit. The second transistor interconnects the lower conductive ring and the control circuit.

A photovoltaic cell is provided, including a substrate having a surface with a marked region configured to mark product information of the photovoltaic cell and a non-marked region; a first texture structure in the marked region, including at least one first protrusion structure and at least one second protrusion structure, a respective first protrusion structure includes a truncated pyramid having a recessed top surface recessing toward a bottom surface of the respective first protrusion structure, and a respective second protrusion structure includes a pyramid structure; and a second texture structure disposed in the non-marked region, where the second texture structure includes at least one third protrusion structure, and a respective third protrusion structure of the at least one third protrusion structure includes a pyramid structure.

A MOS solid-state imaging device is provided in which withstand voltage and 1/f noise of a MOS transistor are improved. In the MOS solid-state imaging device whose unit pixel has at least a photoelectric converting portion and a plurality of field effect transistors, the thickness of gate insulating film in a part of the field effect transistors is different from the thickness of gate insulating film in the other field effect transistors among the plurality of the field effect transistors.

A semiconductor device includes: a connection terminal; a semiconductor chip having an electrode pad on one surface; a wire that connects the connection terminal and the electrode pad of the semiconductor chip; and transparent resin that covers the one surface of the semiconductor chip, and that seals the connection terminal and the wire, wherein: the wire includes a first bonded portion that is joined to the electrode pad, a second bonded portion that is joined to the connection terminal, and a loop portion that is formed so as to be continuous with the first bonded portion and has a turned back portion on a side opposite to the second bonded portion; and predetermined clearances are provided between the loop portion and the first bonded portion, and between the loop portion and other portions of the wire.

According to an embodiment, a photodetector includes a light converting unit, a first layer, a light detecting unit, and a second layer. The light converting unit converts radiation into light. The first layer absorbs the radiation. The light detecting unit is provided between the light converting unit and the first layer and detects light. The second layer is provided between the first layer and the light detecting unit, has a smaller average atomic weight than an average atomic weight of the first layer, and absorbs radiation scattered in the first layer and a fluorescent X-ray generated in the first layer.

A filter member includes a first lead terminal, an optical filter, and a first mold member, and a light incidence surface and a light emission surface of the optical filter is exposed from the first mold member. A sensor member includes an IR sensor element, a second lead terminal and a second mold member. A light-receiving surface of the IR sensor element is exposed from the second mole member. The filter member is disposed on the sensor member so that the light emission surface of the optical filter faces the light-receiving surface of the IR sensor element in the sensor member.

A modular photovoltaic system adapted for collecting light rays from a solar light source to generate electrical current, the system having a light-tracking solar collector adapted to collect the light rays, an edge-lit photovoltaic array, and a transport conduit adapted to transport the light rays to the edge-lit photovoltaic array. The edge-lit photovoltaic array has a plurality of edge-lit photovoltaic panels, each having a transparent diffusing pane positioned between two backing panels with inwardly directed photovoltaic surfaces. Each edge-lit photovoltaic panel perpendicularly contacts a lateral light distributor attached to the transport conduit, causing the transparent diffusing pane to illuminate the photovoltaic surfaces to generate electrical current. The light-tracking solar collector is adapted to rotate to remain oriented toward the solar light source.

A photoelectric conversion device includes a pixel circuit section including: a first semiconductor region containing a first conductivity type impurity; a second semiconductor region formed in the first semiconductor region by using the first conductivity type impurity; a third semiconductor region formed in the second semiconductor region by using a second conductivity type impurity; and a contact plug formed on the third semiconductor region. A net concentration of the first conductivity type impurity is higher in the second semiconductor region than in the first and third semiconductor regions. In the second and third semiconductor regions, a distance between the contact plug and a position where the concentration of the second conductivity type impurity is maximum is equal to or less than a distance between the contact plug and a position where the concentration of the first conductivity type impurity is maximum.

A method includes forming a first implantation mask comprising a first opening, implanting a first portion of a semiconductor substrate through the first opening to form a first doped region, forming a second implantation mask comprising a second opening, and implanting a second portion of the semiconductor substrate to form a second doped region. The first portion of the semiconductor substrate is encircled by the second portion of the semiconductor substrate. A surface layer of the semiconductor substrate is implanted to form a third doped region of an opposite conductivity type than the first and the second doped regions. The third doped region forms a diode with the first and the second doped regions.