Systems, apparatuses, and methods for modulating light at high frequencies by addressing the issue of direct modulation of long lifetime light emitters. Dynamic control of the local density of optical states (LDOS) to exploit the differences between electric and magnetic dipole transitions allows for higher frequency modulation. The LDOS is controlled, in part, by designing a structure such that it enhances or suppresses electric and magnetic dipoles. Direct modulation may be achieved by designing the optical environment to adjust the interferences between the emitted light field and its own reflection at the emitter's location. The optical environment may include light emission material, switchable material, spacer materials, and reflective materials. The structures creating the optical environment enable a new nanometer-scale architecture for on-chip ultrafast directly modulated light sources, which could be easily integrated locally on a range of nanoelectronic and nanophotonic structures, along with light-emitting diodes, waveguides, and fiber optics.

A solid-state light source (SSLS) with light modulation control is described. A SSLS device can include a main p-n junction region configured for recombination of electron-hole pairs for light emission. A supplementary p-n junction region is proximate the main p-n junction region to supplement the recombination of electron-hole pairs, wherein the supplementary p-n junction region has a smaller electron-hole life time than the electron-hole life time of the main p-n junction region. The main p-n junction region and the supplementary p-n junction region operate cooperatively in a light emission state and a light turn-off-state. In one embodiment, the recombination of electron-hole pairs occurs in the main p-n junction region during a light emission state, and the recombination of electron-hole pairs occurs in the supplementary p-n junction region light during the light turn off-state.

A quantum-technological, micro-electro-optical or micro-electronic or photonic system includes a planar substrate of a direct or indirect semiconductor material. The system includes a microelectronic circuit including at least one transistor or diode. The system further includes a micro-optical subdevice and one or more nanoparticles, having one or more color centers. The surface of the of the planar substrate has a portion of a solidified colloidal film which is firmly bonded to the surface of the substrate. The portion of the solidified colloidal film includes the one or more nanoparticles. The system further includes a light-emitting electro-optical component. The light-emitting electro-optical component interacts optically with the micro-optical subdevice. The light-emitting electro-optical component interacts electrically and/or optically with the electrical component through the micro-optical subdevice. The interaction between the light-emitting electro-optical component and the electrical component takes place with an involvement of the color center or a plurality of color centers.

A quantum-technological, micro-electro-optical or micro-electronic or photonic system includes a planar substrate of a direct or indirect semiconductor material. The system includes a microelectronic circuit including at least one transistor or diode. The system further includes a micro-optical subdevice and one or more nanoparticles, having one or more color centers. The surface of the of the planar substrate has a portion of a solidified colloidal film which is firmly bonded to the surface of the substrate. The portion of the solidified colloidal film includes the one or more nanoparticles. The system further includes a light-emitting electro-optical component. The light-emitting electro-optical component interacts optically with the micro-optical subdevice. The light-emitting electro-optical component interacts electrically and/or optically with the electrical component through the micro-optical subdevice. The interaction between the light-emitting electro-optical component and the electrical component takes place with an involvement of the color center or a plurality of color centers.

A micro device structure comprising at least part of an edge of a micro device is covered with a metal-insulator-semiconductor (MIS) structure, wherein the MIS structure comprises a MIS dielectric layer and a MIS gate conductive layer, at least one gate pad provided to the MIS gate conductive layer, and at least one micro device contact extended upwardly on a top surface of the micro device.

Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

A perovskite composite comprising antimony trifluoride, an electronic element comprising same, and a preparation method therefor are disclosed. The perovskite composite comprises tin (Sn)-based perovskite and antimony trifluoride (SbF.sub.3) so that lead (Pb) is not added thereto, and has a low hole concentration (10.sup.14 cm.sup.1), and thus can be used for an optoelectronic device.

A method for achieving voltage-controlled gate-modulated light emission using monolithic integration of fin- and nanowire- n-i-n vertical FETs with bottom-tunnel junction planar InGaN LEDs is described. This method takes advantage of the improved performance of bottom-tunnel junction LEDs over their top-tunnel junction counterparts, while allowing for strong gate control on a low-cross-sectional area fin or wire without sacrificing LED active area as in lateral integration designs. Electrical modulation of 5 orders, and an order of magnitude of optical modulation are achieved in the device.

A display device includes a substrate; a thin-film transistor including an active area, a source electrode, and a drain electrode disposed on the substrate; a passivation layer disposed on the thin-film transistor; a light-emitting device disposed on the passivation layer and including a first electrode, a second electrode, and a structure disposed between the first electrode and the second electrode; a planarization layer disposed on the passivation layer to cover a side surface of the light-emitting device; a pixel electrode electrically connected to the drain electrode of the thin-film transistor through a first contact hole in the passivation layer and the planarization layer, and electrically connected to the first electrode through a second contact hole in the planarization layer; and a common electrode electrically connected to the second electrode through a third contact hole formed in the planarization layer.