The present disclosure relates to a solid state micro device structure that has a microdevice formed on a substrate, with p and n doped layers, active layers between at least the two doped layers, pads coupled to each doped layer, and wherein the n-doped layer is modulated to have a lower conductivity towards an edge of the device. The invention further involves, dielectric layer, conductive layer, passivation layer and MIS structure.

A lamp bead structure is used for connection to at least two mutually independent control lines. The lamp bead structure includes a light-guiding element and a light-emitting element. The light-guiding element is provided with a light output region and a light input region. At least two light-emitting elements are provided to be connected to the control lines in a one-to-one correspondence. Light emitted by the light-emitting element is able to enter the light-guiding element through the light input region and exit through the same light output region.

A display device includes: a substrate including a plurality of pixels; and a light-emitting element layer on the substrate. The light-emitting element layer includes: light-emitting elements in each pixel, configured to emit light, and arranged along a first direction; viewing angle control portions respectively on the light-emitting elements; and reflecting portions respectively on one side and another side of the light-emitting elements in a second direction crossing the first direction in a plan view

Disclosed are a super-luminescent diode and an external cavity laser including the same. The diode includes a substrate including a gain region, a window region spaced apart from the gain region, and a tapered region between the window region and the gain region, an active waveguide layer including a lower waveguide layer provided on the substrate and extending from the gain region to the window region, and an upper waveguide layer provided on the lower waveguide layer and extending from the gain region to the tapered region, and a clad layer provided on the lower waveguide layer and the upper waveguide layer of the active waveguide layer. The lower waveguide layer and the upper waveguide layer may include asymmetric separate confinement heterostructure (SCH) layers.

The present invention relates to a light emitting device comprising a first main layer of an electrically conducting material, a second main layer of an electrically conducting material and a light emitting unit between the first main layer and the second main layer, wherein the light emitting unit comprises a light emitting layer, and wherein the first main layer and/or the second main layer has a light exit orifice aligned with a section of the light emitting layer. The light emitting device can utilise impact ionisation to emit UV-C light.