A quantum device includes a first qubit substrate, a second qubit substrate, and a capacitive coupling substrate. The first qubit substrate includes a first qubit and a first electrode coupled to the first qubit. The second qubit substrate includes a second qubit and a second electrode coupled to the second qubit. The capacitive coupling substrate includes a third electrode capacitively coupled to the first electrode and the second electrode, a shield layer covering the first qubit and the second qubit, and an insulating film provided between the third electrode and the shield layer.

A method manufactures exchange gates from a starting structure including a substrate and, disposed on the substrate, a plurality of gate stacks, each gate stack including, a layer of a conductive or semiconductor material and a layer of a hard mask.

A quantum device with semiconductor qubits, comprising at least: a layer of a first semiconductor arranged on a layer of a second semiconductor, the forbidden energy band of which is different from that of the first semiconductor, such that one of the layers forms a confinement potential barrier with respect to the electrons or the holes intended to be located in confinement regions formed in the other layer; cavities formed through only one portion of the thickness of the layer of the first semiconductor; and electrically conductive control gates at least partially arranged individually in one of the cavities.

A method of controlling random charge effects originating from local defects (202-1, 202-2, 202-3) above a quantum dot in a quantum dot array is described, wherein the method comprises: selecting one or more electrodes (Vg, Vb) configured to control one or more quantum structures formed in one or more semiconductor layers arranged on a substrate; and, applying one or more first voltage pulses (inset) to the one or more selected electrodes, the amplitude of the one or more first voltage pulses being selected to induce a shift in one or more charge states (210-1, 210-2, 210-3) of one or more offset charges in one or more dielectric, semiconductor and/or interface layers between the one or more selected electrodes (Vg, Vb) and the one or more semiconductor layers in which the one or more quantum dots are formed by the application of voltages on one or more electrodes (Vg, Vb).

A magnetoresistive device is provided comprising an active channel comprises an extremely large magnetoresistance (XMR) material. A gate electrode surrounds the active channel, wherein the gate electrode has a first portion on one side of the active channel and a second portion on the opposite side of the active channel. An insulating spacer electrically isolates the active channel from the gate electrode. Electrical current through the gate electrode generates and focuses a magnetic field applied to the active channel.

Apparatus, systems and methods for generating separated spin-polarized exciton-polariton quasiparticles are disclosed. Apparatus, systems and methods comprise providing a perovskite optical microcavity, incorporating liquid crystal molecules into the perovskite microcavity, and generating one or more polaritons within the microcavity by optically exciting an intersection point corresponding to a point of generation of the polaritons such that the one or more polaritons separate perpendicular to their respective propagation direction.

A quantum computing method includes initializing a state of a resonator-coupled quantum emitter, receiving at least two photonic graph states, selecting at least one photon from each graph state, feeding the selected photons through an entangling gate via the resonator-coupled quantum emitter, and disentangling the resonator-coupled quantum emitter from the selected photons. Each of the at least two photonic graph states contains at least two photons. The disentangling includes at least one of detecting the state of the resonator-coupled quantum emitter or mapping the state of the resonator-coupled quantum emitter to a state of an additional photon.

A fabrication method for a semiconductor structure with a hole spin qubit includes: providing a substrate; growing a germanium quantum well on the substrate, in which the germanium quantum well is an inclined quantum well structure grown in a [110] direction, and the germanium quantum well is grown by a complementary metal oxide semiconductor process; and fabricating a two-dimensional gate-defined quantum dot in the germanium quantum well.

An electronic device includes a dielectric layer including crystal grains having aligned crystal orientations the dielectric layer may be between a substrate and a gate electrode. The dielectric layer may be between isolated first and second electrodes. A method of manufacturing an electronic device may include preparing a substrate having a channel layer, forming the dielectric layer on the channel layer, and forming a gate electrode on the dielectric layer.

A quantum information processing device including a semiconductor substrate. An optical resonator is coupled to the substrate. The optical resonator supports a first photonic mode with a first resonator frequency. The quantum information processing device includes a non-gaseous chalcogen donor atom disposed within the semiconductor substrate and optically coupled to the optical resonator. The donor atom has a transition frequency in resonance with the resonator frequency. Also disclosed herein are systems, devices, articles and methods with practical application in quantum information processing including or associated with one or more deep impurities in a silicon substrate optically coupled to an optical structure.