An optical communication receiver includes: a photodiode and signal processing circuitry coupled to the photodiode. The photodiode is configured to receive a modulated optical signal conveying data and convert the modulated optical signal to an electrical signal. The photodiode includes: a waveguide configured to receive the modulated optical signal; an absorption region above the waveguide; and a capacitor electrically coupled in series with the absorption region to reduce a capacitance of the photodiode as compared to a scenario in which the capacitor is omitted from the photodiode. The signal processing circuitry is configured to process the electrical signal to extract and output the data.

A homogeneous optoelectronic reservoir computing system based on a nitrogen-doped GeSbTe material includes an optoelectronic reservoir layer and a readout layer connected to each other; the optoelectronic reservoir layer includes multiple optical synaptic devices based on nitrogen-doped GeSbTe material, and the optical synaptic devices realize perception and nonlinear response of image light signals based on the photoconductive effect of a single light pulse and the paired-pulse facilitation effect under a double light pulse; the readout layer includes multiple electrical synaptic devices based on the nitrogen-doped GeSbTe material, and the electrical synaptic devices realize linear response and image recognition of output signals of the optoelectronic reservoir layer based on linearity, symmetry long-term potentiation function, and long-term depression function. In the system of the disclosure, both the reservoir layer and the readout layer use devices based on the same material.

This X-ray detector which detects an X-ray and generates a corresponding output signal comprises: a TFT array including a plurality of pixel TFT circuits each generating the output signal according to the intensity of the detected X-ray; a gate circuit configured to apply, to the TFT array, a gate signal for driving the plurality of pixel TFT circuits; and a readout circuit configured to receive the output signal generated by each of the plurality of pixel TFT circuits and transmit the output signal to the outside. The gate circuit comprises: a gate chip-on film configured to generate the gate signal and apply the gate signal to the TFT array; and a gate connection FPCB circuity connected to the gate chip-on film so as to receive a driving signal for generating the gate signal and transmit the driving signal to the gate chip-on film.

A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material In.sub.yGa.sub.1yxAl.sub.xAs is between x=0.2 and x=0.35, wherewith the proportion y of In may be between 0.5 and 0.55. The support substrate is InP or GaAs.

A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material In.sub.yGa.sub.1yxAl.sub.xAs is between x=0.2 and x=0.35, wherewith the proportion y of In may be between 0.5 and 0.55. The support substrate is InP or GaAs.

The present disclosure relates to an integrated chip including a semiconductor layer and a photodetector disposed along the semiconductor layer. A color filter is over the photodetector. A micro-lens is over the color filter. A dielectric structure comprising one or more dielectric layers is over the micro-lens. A receptor layer is over the dielectric structure. An optical signal enhancement structure is disposed along the dielectric structure and between the receptor layer and the micro-lens.

A method for manufacturing a photodetector and a method for manufacturing an image sensor includes forming a first electrode on a support; filtering a quantum dot dispersion liquid containing quantum dots having a maximal absorption in terms of absorbance in a wavelength range of 900 to 1700 nm, a ligand, and a solvent, and forming a semiconductor film containing quantum dots on the first electrode by using the filtered quantum dot dispersion liquid; and forming a second electrode on the semiconductor film.

Disclosed herein are tritium detection devices and methods of making and use thereof. For example, disclosed herein are tritium detection devices comprising: a tritium detection region comprising a tritium absorption layer and an anti-diffusion layer; a Schottky contact region comprising a Schottky contact layer; a semiconductor layer, the semiconductor layer being a layer comprising a semiconductor; an epitaxial semiconductor layer, the epitaxial semiconductor layer being an epitaxial layer of the semiconductor; and an Ohmic contact layer.

In a described example, an apparatus includes: a photon detector array with a first signal output pad coupled to a photon detector array pixel; a die carrier comprising a readout integrated circuit (ROIC) die and a conductor layer having conductors that couple a first signal input pad on the conductor layer to an input signal lead of the ROIC die; and the first signal output pad coupled to the first signal input pad.

An X-ray detector comprises: a semiconductor bulk made of Cd.sub.(1-x)Zn.sub.xTe, wherein x is in a range of 0 to 50%; a contact made of a first material on the semiconductor bulk; and a contact-semiconductor region, which is part of the semiconductor bulk and is adjacent to the contact. The contact-semiconductor region is doped with a second material, which differs from the first material, and a majority of the semiconductor bulk is not doped with the second material.