A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.

A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.

A chemical-mechanical planarization device and a method for using a chemical-mechanical planarization device in conjunction with a semiconductor substrate is provided. In accordance with some embodiments, the device includes: a pad disposed over a rotatable platen; a carrier head disposed over the pad and configured to retain a semiconductor substrate between the pad and the carrier head; a tank configured to retain a liquid containing composition; at least one tube fluidly coupled with the tank, the at least one tube comprising a photocatalyst therein; a nozzle fluidly coupled with the tank through the at least one tube and configured to supply the liquid containing composition onto the pad; and a light source configured to provide light to irradiate the photocatalyst, and the liquid containing composition passing through the at least one tube.

A chemical-mechanical planarization device and a method for using a chemical-mechanical planarization device in conjunction with a semiconductor substrate is provided. In accordance with some embodiments, the device includes: a pad disposed over a rotatable platen; a carrier head disposed over the pad and configured to retain a semiconductor substrate between the pad and the carrier head; a tank configured to retain a liquid containing composition; at least one tube fluidly coupled with the tank, the at least one tube comprising a photocatalyst therein; a nozzle fluidly coupled with the tank through the at least one tube and configured to supply the liquid containing composition onto the pad; and a light source configured to provide light to irradiate the photocatalyst, and the liquid containing composition passing through the at least one tube.

A polishing liquid contains permanganate ions, a weak acid, and a soluble salt of the weak acid. The polishing liquid preferably has a pH of 0.5 to 6.0 at 25 C. before commencement of polishing. When a 0.1 mol/L aqueous solution of sodium hydroxide is added to 100 mL of the polishing liquid having been adjusted to pH 3.0 to 4.0 at 25 C., the amount of the sodium hydroxide aqueous solution necessary to raise the pH of the polishing liquid by 0.5 is preferably 0.1 to 100 mL. The weak acid is preferably acetic acid.

A substrate processing method which can clean a peripheral portion of a substrate after polishing and can check the cleaning effect of the peripheral portion of the substrate is disclosed. The substrate processing method includes polishing a peripheral portion of the substrate by pressing a polishing tape having abrasive grains against the peripheral portion of the substrate with a first head, cleaning the peripheral portion of the substrate by supplying a cleaning liquid to the peripheral portion of the substrate after polishing, bringing a tape having no abrasive grains into contact with the peripheral portion of the substrate after cleaning by a second head, applying light to the tape and receiving reflected light from the tape by a sensor, and judging that the peripheral portion of the substrate is contaminated when an intensity of the received reflected light is lower than a predetermined value.

A substrate processing method which can clean a peripheral portion of a substrate after polishing and can check the cleaning effect of the peripheral portion of the substrate is disclosed. The substrate processing method includes polishing a peripheral portion of the substrate by pressing a polishing tape having abrasive grains against the peripheral portion of the substrate with a first head, cleaning the peripheral portion of the substrate by supplying a cleaning liquid to the peripheral portion of the substrate after polishing, bringing a tape having no abrasive grains into contact with the peripheral portion of the substrate after cleaning by a second head, applying light to the tape and receiving reflected light from the tape by a sensor, and judging that the peripheral portion of the substrate is contaminated when an intensity of the received reflected light is lower than a predetermined value.

According a method for manufacturing a semiconductor device of the present invention, a surface protection film having an elastic modulus of 2 GPa or more is formed on a first main surface of a semiconductor wafer where an element structure is formed, the semiconductor wafer is placed on a stage with the first main surface facing the stage, and a second main surface of the semiconductor wafer opposite to the first main surface is ground.

In an embodiment, a method includes: performing a self-limiting process to modify a top surface of a wafer; after the self-limiting process completes, removing the modified top surface from the wafer; and repeating the performing the self-limiting process and the removing the modified top surface from the wafer until a thickness of the wafer is decreased to a predetermined thickness.

In an embodiment, a method includes: performing a self-limiting process to modify a top surface of a wafer; after the self-limiting process completes, removing the modified top surface from the wafer; and repeating the performing the self-limiting process and the removing the modified top surface from the wafer until a thickness of the wafer is decreased to a predetermined thickness.