A slurry containing abrasive grains, a liquid medium, and a salt of a compound represented by formula (1) below, in which the abrasive grains include first particles and second particles in contact with the first particles, the first particles contain cerium oxide, and the second particles contain a hydroxide of a tetravalent metal element.

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[In formula (1), R represents a hydroxyl group or a monovalent organic group.]

Provided is a polishing composition which can sufficiently remove defects remaining on the surface of a polished object and which can make the polishing speeds of the respective materials substantially equal to each other when polishing the object to be polished containing a plurality of materials.

A polishing composition used for polishing an object to be polished containing a material having a silicon-silicon bond, a material having a silicon-nitrogen bond, and a material having a silicon-oxygen bond, the polishing composition including: organic acid surface-immobilized silica particles; a wetting agent; and a polishing speed inhibitor for the material having a silicon-silicon bond, wherein the polishing composition has a pH of less than 7.

An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

Disclosed herein are a method for analyzing polishing behavior and a device for the same. Herein, the method corresponds to a method for analyzing polishing behavior of a device for analyzing polishing behavior by at least one processor including the steps of setting up equipment shape variables, operation variables, and calculation variables corresponding to at least one configuration element being selected from one of a pad and a wafer, the pad and the wafer configuring a polishing device, generating calculation nodes based on the equipment shape variables, the operation variables, and the calculation variables, calculating a sliding distance on a wafer surface caused by the pad or a sliding distance on a pad surface caused by the wafer by using the calculation node, and outputting the calculated result.

The polishing pad is suitable for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The polishing pad includes radial feeder grooves in a polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge of the polishing pad. Each polishing region including a series of biased grooves that connects a pair of adjacent radial feeder grooves. A majority of the biased grooves having either an inward bias toward the center of the polishing pad or an outward bias for directing polishing fluid toward the outer edge of the polishing pad.

The polishing pad is suitable for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The polishing pad includes radial feeder grooves in a polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge of the polishing pad. Each polishing region including a series of biased grooves that connects a pair of adjacent radial feeder grooves. A majority of the biased grooves having either an inward bias toward the center of the polishing pad or an outward bias for directing polishing fluid toward the outer edge of the polishing pad.

A dresser includes a main body having a stepped surface comprising a plurality of steps, wherein a thickness of the main body at a first step of the plurality of steps is a largest thickness of the main body, and a thickness of the main body at a last step of the plurality of steps is a smallest thickness of the main body; and a plurality of superhard particles disposed on each of the plurality of steps of the stepped surface. The plurality of steps of the stepped surface are different in area, and particle diameters of the superhard particles increase stepwise from the first step of the plurality of steps to the last step of the plurality of steps.

A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.

A method for producing a wafer from a hexagonal single crystal ingot includes: planarizing an upper surface of the hexagonal single crystal ingot; applying a laser beam of such a wavelength as to be transmitted through the ingot, with a focal point positioned in an inside of a region not to be formed with devices of a wafer to be produced from the upper surface of the ingot which has been planarized, to form a production history; and applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of the wafer to be produced from the upper surface of the hexagonal single crystal ingot which has been planarized, to form an exfoliation layer.

This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.