The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal. In at least one process of Process 1 to Process 6, a chemical liquid which includes an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom, and in which the total content of the metal atom is 0.001 to 100 mass ppt is used.

The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal. In at least one process of Process 1 to Process 6, a chemical liquid which includes an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom, and in which the total content of the metal atom is 0.001 to 100 mass ppt is used.

Provided is a wafer polishing method comprising: a step of determining a first correlation a second correlation; a step of calculating mechanical polishing rate/chemical polishing rate; a step of obtaining a relationship between the ratio of the mechanical polishing rate to the chemical polishing rate and one or more indications of wafer flatness and determining a specific range of the ratio of the mechanical polishing rate to the chemical polishing rate; a step of selecting a first target polishing solution that meets the specific range of the ratio of the mechanical polishing rate to the chemical polishing rate based on the first correlation and the second correlation; and a step of polishing wafers using the first target polishing solution. Also provided is a wafer production method including a step of performing a polishing process by the above wafer polishing method.

The present invention is to provide a means for reducing surface roughness (Ra) while maintaining a high polishing rate in polishing of an object to be polished containing a resin and a filler. A polishing composition of the present invention comprises alumina particles, colloidal silica particles, and a dispersing medium for use in polishing an object to be polished containing a resin and a filler, in which the alumina particles have an average particle size of less than 2.8 m, and the colloidal silica particles have an average particle size less than the average particle size of the alumina particles.

To suppress damage to a surface to be polished of a substrate and improve a polishing rate. A substrate processing apparatus includes a table 100 for supporting a substrate WF, a pad holder 226 for holding a polishing pad 222 for polishing the substrate WF supported by the table 100, a nozzle 228 for supplying a polishing liquid around the pad holder 226, and a pad rotation mechanism for rotating the pad holder 226. The pad holder 226 includes a discharge hole 221-2a formed in the center of a holding surface 221-2c configured to hold the polishing pad 222 and a discharge passage 221-2b communicated with an outside of the pad holder 226 from the discharge hole 221-2a.

A polishing liquid containing abrasive grains including a hydroxide of a tetravalent metal element, a polymer including a structure unit represented by Formula (1) below, and a liquid medium.

##STR00001##

[in Formula (1), * represents a bonding hand.]

Provided are a polishing method that can be commonly applied to different types of silicon substrates varying in resistivity as well as a polishing composition set used in the polishing method. The silicon substrate polishing method provided by this invention comprises supplying a first polishing slurry S.sub.1 and a second polishing slurry S.sub.2 to a silicon substrate to be polished, switching them in this order midway through polishing the silicon substrate. The first polishing slurry S.sub.1 comprises an abrasive A.sub.1 and a water-soluble polymer P.sub.1. The polishing removal rate of the first polishing slurry S.sub.1 is higher than that of the second polishing slurry S.sub.2.

Provided are a polishing method that can be commonly applied to different types of silicon substrates varying in resistivity as well as a polishing composition set used in the polishing method. The silicon substrate polishing method provided by this invention comprises supplying a first polishing slurry S.sub.1 and a second polishing slurry S.sub.2 to a silicon substrate to be polished, switching them in this order midway through polishing the silicon substrate. The first polishing slurry S.sub.1 comprises an abrasive A.sub.1 and a water-soluble polymer P.sub.1. The polishing removal rate of the first polishing slurry S.sub.1 is higher than that of the second polishing slurry S.sub.2.

A silica-based particle dispersion including a silica-based particle group and a high polishing rate and high surface precision is achieved to a silica-based substrate or a NiP-plated substrate to be polished or the like. A silica-based particle dispersion containing a group including irregularly-shaped and non-irregularly-shaped silica-based particles, wherein the irregularly-shaped silica-based particles each have a plurality of small holes thereinside and a covering silica layer which covers the core, and the silica-based particle group satisfies [1]-[3]. [1] Having an average particle size (D.sub.1) of 100-600 nm, and a particle size (D.sub.2) of 30-300 nm in terms of specific surface area. [2] An irregular-shape degree D (D=D.sub.1/D.sub.3) represented by the average particle size (D.sub.1) and a projected area-equivalent particle size (D.sub.3) being in the range of 1.1-5.0. [3] When waveform separation is performed on a volume-reference particle size distribution, a multi-peak distribution in which three or more peaks are detected.

A polishing composition comprising an abrasive grain; a modified microfibril cellulose in which at least a part of the cellulose units has a hydroxyl group at the C6 position oxidized to a carboxyl group; and a dispersion medium, wherein each content of Na and K is 100 ppm or less relative to the solids weight.