A processing apparatus used in processing a workpiece having a device in each of a plurality of regions that includes a chuck table holding the workpiece, positioning means positioning the workpiece before grinding, resin coating means including a rotatable spinner table for coating the workpiece with a resin, cleaning means, a grinding unit, and a transfer unit. The transfer unit includes a first transfer unit transferring the workpiece from the positioning means to the spinner table and from the spinner table to the chuck table, a second transfer unit transferring the workpiece from the chuck table to the cleaning means, and a front/back surface inversion transfer unit taking over the workpiece from the cleaning means to the second transfer unit.

A processing apparatus used in processing a workpiece having a device in each of a plurality of regions that includes a chuck table holding the workpiece, positioning means positioning the workpiece before grinding, resin coating means including a rotatable spinner table for coating the workpiece with a resin, cleaning means, a grinding unit, and a transfer unit. The transfer unit includes a first transfer unit transferring the workpiece from the positioning means to the spinner table and from the spinner table to the chuck table, a second transfer unit transferring the workpiece from the chuck table to the cleaning means, and a front/back surface inversion transfer unit taking over the workpiece from the cleaning means to the second transfer unit.

An object of the present invention is to provide a treatment liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a chemical mechanical polishing method and a method for treating a semiconductor substrate.

The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor substrate, which includes a component A having two or more onium structures in the molecule and water, and has a pH of 6.0 to 13.5 at 25° C.

Provided are a composition for chemical mechanical polishing and a chemical mechanical polishing method, which enable reduction in occurrence of surface defects in a polished surface and which enable high speed polishing of a tungsten film which is a wiring material. The composition for chemical mechanical polishing contains: (A) particles containing alumina and having a functional group represented by general formula (1); and (B) a liquid medium. (1): —SO.sub.3.sup.−M.sup.+ (In the formula, M.sup.+ represents a monovalent cation.)

There is provided a production method of a chain silica particle dispersion. This production method includes a dispersion preparation step of hydrolyzing alkoxysilane in the presence of ammonia to prepare a silica particle dispersion, an ammonia removal step of removing the ammonia from the silica particle dispersion such that an ammonia amount relative to silica contained in the silica particle dispersion is 0.3% by mass or less, and a hydrothermal treatment step of hydrothermally treating the silica particle dispersion having a silica concentration of 12% by mass or more, from which the ammonia has been removed, at a temperature of not lower than 150° C. and lower than 250° C. An abrasive including such chain silica particles is high in polishing rate and excellent in polishing properties.

A polishing liquid containing: abrasive grains containing a hydroxide of a tetravalent metal element; and a nitrogen-containing compound having a hydrocarbon group having 6 or more carbon atoms and bonded to a nitrogen atom, in which the nitrogen-containing compound contains at least one selected from the group consisting of a quaternary ammonium salt, tertiary amine, and a heterocyclic compound having a quaternary nitrogen atom constituting a heterocyclic ring. A polishing method including a step of polishing a surface to be polished by using this polishing liquid.

Provided are a composition for chemical mechanical polishing and a method for chemical mechanical polishing, whereby a tungsten film as a wiring material can be polished at high speed, and the occurrence of surface defects in a polished surface can be reduced. A composition for chemical mechanical polishing pertaining contains (A) alumina particles, at least a portion of the surface of which is coated with a coating film of silica alumina, and (B) a liquid medium.

An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate.

The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25° C.

The present application provides a grinding control method, a grinding control apparatus and a storage medium, and is applied in the field of semiconductor manufacturing processes. The method includes: acquiring a target resistance value of a metal film of a grinding object set by a user, determining a target output value of an eddy current sensor according to the target resistance value, acquiring an output value of the eddy current sensor in real time, and stopping a grinding task when the output value reaches the target output value.

A polishing agent for a synthetic quartz glass substrate including at least: polishing particles; and water, wherein the polishing particles contain: composite oxide particles of cerium and yttrium; and composite amorphous particles of cerium and yttrium, and the composite oxide particles of cerium and yttrium have an average primary particle diameter of 30 nm or more and 80 nm or less, and the composite amorphous particles of cerium and yttrium have an average primary particle diameter of 100 nm or more and 300 nm or less.