Patent classifications
B24B37/00
MOLDS AND METHODS TO CONTROL MOLD SURFACE QUALITY
A method for treating a mold includes grinding an outer metal surface of a mold body of the mold with a first material; lapping the outer metal surface after the grinding with a second material that is finer than the first material; and polishing the outer metal surface after the lapping to achieve an average surface roughness (R.sub.a) less than or equal to about 0.15 m and a waviness height (W.sub.a) less than or equal to about 100 nm. A mold for shaping glass-based material can include a mold body having an outer metal surface, wherein the outer metal surface has an average surface roughness (R.sub.a) less than or equal to about 0.15 m and a waviness height (W.sub.a) less than or equal to about 100 nm.
MOLDS AND METHODS TO CONTROL MOLD SURFACE QUALITY
A method for treating a mold includes grinding an outer metal surface of a mold body of the mold with a first material; lapping the outer metal surface after the grinding with a second material that is finer than the first material; and polishing the outer metal surface after the lapping to achieve an average surface roughness (R.sub.a) less than or equal to about 0.15 m and a waviness height (W.sub.a) less than or equal to about 100 nm. A mold for shaping glass-based material can include a mold body having an outer metal surface, wherein the outer metal surface has an average surface roughness (R.sub.a) less than or equal to about 0.15 m and a waviness height (W.sub.a) less than or equal to about 100 nm.
CERIUM OXIDE ABRASIVE GRAINS
In one aspect, the present disclosure provides cerium oxide abrasive grains that can improve the polishing rate.
One aspect of the present disclosure relates to cerium oxide abrasive grains for use in an abrasive, in which an amount of {100} faces exposed on a surface of each of the cerium oxide abrasive grains is at least 30%.
Holding pad
The present invention is a holding pad including a holding layer for holding a member to be polished, in which the holding layer includes on a part of a surface thereof a template fixing portion for sticking a template for preventing lateral displacement of the member to be polished, the template fixing portion has on a surface thereof an adsorption layer for adsorbing and fixing the template the template fixing portion, and the adsorption layer is formed of a composition which is formed by crosslinking a silicone composed of a predetermined siloxane.
Coupling mechanism, substrate polishing apparatus, method of determining position of rotational center of coupling mechanism, program of determining position of rotational center of coupling mechanism, method of determining maximum pressing load of rotating body, and program of determining maximum pressing load of rotating body
A coupling mechanism which enables a rotating body to follow an undulation of a polishing surface without generating flutter or vibration of the rotating body, and can finely control a load on the rotating body on a polishing surface in a load range which is smaller than the gravity of rotating body is disclosed. The coupling mechanism includes an upper spherical bearing and a lower spherical bearing disposed between a drive shaft and the rotating body. The upper spherical bearing has a first concave contact surface and a second convex contact surface which are in contact with each other, and the lower spherical bearing has a third concave contact surface and a fourth convex contact surface which are in contact with each other. The first concave contact surface and the second convex contact surface are located above the third concave contact surface and the fourth convex contact surface. The first concave contact surface, the second convex contact surface, the third concave contact surface, the fourth convex contact surface are arranged concentrically.
MODIFIED COLLOIDAL SILICA AND METHOD FOR PRODUCING THE SAME, AND POLISHING AGENT USING THE SAME
To provide modified colloidal silica capable of improving the stability of the polishing speed with time when used as abrasive grains in a polishing composition for polishing a polishing object that contains a material to which charged modified colloidal silica easily adheres, such as a SiN wafer, and to provide a method for producing the modified colloidal silica.
Modified colloidal silica, being obtained by modifying raw colloidal silica, wherein the raw colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope.
MODIFIED COLLOIDAL SILICA AND METHOD FOR PRODUCING THE SAME, AND POLISHING AGENT USING THE SAME
To provide modified colloidal silica capable of improving the stability of the polishing speed with time when used as abrasive grains in a polishing composition for polishing a polishing object that contains a material to which charged modified colloidal silica easily adheres, such as a SiN wafer, and to provide a method for producing the modified colloidal silica.
Modified colloidal silica, being obtained by modifying raw colloidal silica, wherein the raw colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope.
MODIFIED COLLOIDAL SILICA AND METHOD FOR PRODUCING THE SAME, AND POLISHING AGENT USING THE SAME
To provide modified colloidal silica capable of improving the stability of the polishing speed with time when used as abrasive grains in a polishing composition for polishing a polishing object that contains a material to which charged modified colloidal silica easily adheres, such as a SiN wafer, and to provide a method for producing the modified colloidal silica.
Modified colloidal silica, being obtained by modifying raw colloidal silica, wherein
the raw colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope.
MODIFIED COLLOIDAL SILICA AND METHOD FOR PRODUCING THE SAME, AND POLISHING AGENT USING THE SAME
To provide modified colloidal silica capable of improving the stability of the polishing speed with time when used as abrasive grains in a polishing composition for polishing a polishing object that contains a material to which charged modified colloidal silica easily adheres, such as a SiN wafer, and to provide a method for producing the modified colloidal silica.
Modified colloidal silica, being obtained by modifying raw colloidal silica, wherein
the raw colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope.
Polishing composition
A polishing composition that can suppress surface defects and reduce haze is provided. A polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; and an alkali compound, where an average particle size of particles in the polishing composition measured by dynamic light scattering is not more than 55 nm. Preferably, the polishing composition further includes a non-ionic surfactant. Preferably, the polishing composition further includes a polyalcohol.