A ceria composite particle dispersion has ceria composite particles having an average particle size of 50 to 350 nm and having the features described below. Each ceria composite particle has a mother particle, a cerium-containing silica layer on the surface thereof, and child particles dispersed inside the cerium-containing silica layer, the mother particles being amorphous silica-based and the child particles being crystalline ceria-based. The child particles have a coefficient of variation (CV value) in a particle size distribution of 14 to 40%. The ceria composite particles have a mass ratio of silica to ceria of 100:11-316. Only the crystal phase of ceria is detected when the ceria composite particles are subjected to X-ray diffraction. The average crystallite size of the crystalline ceria measured by subjecting the ceria composite particles to X-ray diffraction is 10 to 25 nm.

Provided is a polishing composition capable of improving polishing selectivity and reducing polishing unevenness while increasing polishing rate.

The present disclosure relates to a polishing composition containing; cerium oxide particles A; a polysaccharide B having a weight average molecular weight of 800 or more and 2800 or less; and water.

The present invention relates to a CMP apparatus having a polishing pad surface property measuring device for measuring surface properties such as surface topography or surface condition of a polishing pad used for polishing a substrate such as a semiconductor wafer. The CMP apparatus includes a polishing pad surface property measuring device (30) configured to apply a laser beam to a surface of a polishing pad (2) and to receive reflected light from the polishing pad to obtain reflection intensity in each reflection angle, a processor (40) configured to perform a Fourier transform on a reflection intensity distribution obtained by the measuring device to obtain a spatial wavelength spectrum of the surface of the polishing pad and to obtain surface properties of the polishing pad by numerical analysis, a dressing control unit (23) configured to determine dressing conditions of the polishing pad (2) by a closed loop control based on the surface properties of the polishing pad obtained by the processor, and a dressing apparatus (20) configured to dress the polishing pad based on the dressing conditions determined by the dressing control unit.

The present invention relates to a CMP apparatus having a polishing pad surface property measuring device for measuring surface properties such as surface topography or surface condition of a polishing pad used for polishing a substrate such as a semiconductor wafer. The CMP apparatus includes a polishing pad surface property measuring device (30) configured to apply a laser beam to a surface of a polishing pad (2) and to receive reflected light from the polishing pad to obtain reflection intensity in each reflection angle, a processor (40) configured to perform a Fourier transform on a reflection intensity distribution obtained by the measuring device to obtain a spatial wavelength spectrum of the surface of the polishing pad and to obtain surface properties of the polishing pad by numerical analysis, a dressing control unit (23) configured to determine dressing conditions of the polishing pad (2) by a closed loop control based on the surface properties of the polishing pad obtained by the processor, and a dressing apparatus (20) configured to dress the polishing pad based on the dressing conditions determined by the dressing control unit.

To provide a means capable of suppressing the generation of gelation at the time of or after the addition of a silane coupling agent in the production of a cationically modified silica including modifying a silica raw material with a silane coupling agent. The present invention is a method for producing a cationically modified silica, including: mixing a silica raw material having a negative zeta potential with a silane coupling agent having an amino group or a quaternary cationic group; and reacting the silica raw material with the silane coupling agent to obtain a cationically modified silica, in which the cationically modified silica satisfies the following relational expression (1):

X<Y relational expression(1) in the relational expression (1), X is a pH value at which an isoelectric point is shown in the cationically modified silica, and Y is a pH value of the cationically modified silica.

The present invention provides a polishing composition which can polish an object to be polished at a high polishing speed and with fewer scratches (defects). The present invention is a polishing composition containing silica of which a maximum peak height in a weight change rate distribution curve obtained by thermogravimetric measurement in a range of 25 C. or higher and 250 C. or lower is 0.011 or more and less than 0, a pH at 25 C. of the polishing composition being less than 6.0.

The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal. In at least one process of Process 1 to Process 6, a chemical liquid which includes an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom, and in which the total content of the metal atom is 0.001 to 100 mass ppt is used.

Methods and systems for thinning a device wafer to tens of micron, micron, or sub-micron thicknesses are disclosed. Device wafers are thinned by using a two-step grinding process and a chemical mechanical polish (CMP) process. One or more first grinding parameters associated with the first grinding process are determined, received, and/or adjusted before and/or during the performance of the first grinding process. One or more second grinding parameters associated with the second grinding process are determined, received and/or adjusted before and/or during the performance of the second grinding process. One or more polishing parameters associated with the CMP process are determined and/or adjusted before and/or during the performance of the CMP process.

A method for treating a mold includes grinding an outer metal surface of a mold body of the mold with a first material; lapping the outer metal surface after the grinding with a second material that is finer than the first material; and polishing the outer metal surface after the lapping to achieve an average surface roughness (R.sub.a) less than or equal to about 0.15 m and a waviness height (W.sub.a) less than or equal to about 100 nm. A mold for shaping glass-based material can include a mold body having an outer metal surface, wherein the outer metal surface has an average surface roughness (R.sub.a) less than or equal to about 0.15 m and a waviness height (W.sub.a) less than or equal to about 100 nm.

A method for treating a mold includes grinding an outer metal surface of a mold body of the mold with a first material; lapping the outer metal surface after the grinding with a second material that is finer than the first material; and polishing the outer metal surface after the lapping to achieve an average surface roughness (R.sub.a) less than or equal to about 0.15 m and a waviness height (W.sub.a) less than or equal to about 100 nm. A mold for shaping glass-based material can include a mold body having an outer metal surface, wherein the outer metal surface has an average surface roughness (R.sub.a) less than or equal to about 0.15 m and a waviness height (W.sub.a) less than or equal to about 100 nm.