A polishing method capable of obtaining a stable film thickness without being affected by a difference in measurement position is disclosed. The polishing method includes: rotating a polishing table that supports a polishing pad; pressing the surface of the wafer against the polishing pad; obtaining a plurality of film-thickness signals from a film thickness sensor during a latest predetermined number of revolutions of the polishing pad, the film thickness sensor being installed in the polishing table; determining a plurality of measured film thicknesses from the plurality of film-thickness signals; determining an estimated film thickness at a topmost portion of the raised portion based on the plurality of measured film thicknesses; and monitoring polishing of the wafer based on the estimated film thickness at the topmost portion of the raised portion.

A polishing composition includes: metal oxide particles as abrasive grains, wherein the full width at half maximum of a peak portion having the maximum diffracted intensity in an X-ray powder diffraction pattern of the metal oxide particles is less than 1; and two or more varieties of water-soluble polymers having different weight-average molecular weights as a selectivity control agent, wherein the water-soluble polymers differ in weight-average molecular weight by 10 times or more. A polishing composition and a method for polishing a semiconductor substrate using thereof can suppress occurrence of defects due to polishing such as a scratch, dishing, and erosion while keeping the high polishing rate, and can optionally control the selectivity, which is a ratio of polishing speed of a metal layer and that of an insulator layer.

The present invention provides a polishing apparatus including: a turntable which has a polishing pad attached thereto; a polishing head configured to hold a wafer; a tank configured to store a polishing agent; a polishing agent supply mechanism which supplies the polishing agent stored in the tank to the polishing pad; a waste liquid receiver which collects the polishing agent flowing down from an upper side of the turntable; and a circulation mechanism which is connected to the waste liquid receiver and supplies the polishing agent collected by the waste liquid receiver to the tank, the polishing agent is supplied to the polishing pad from the tank by the polishing agent supply mechanism, the used polishing agent which flows down from the upper side of the turntable is collected by the waste liquid receiver, a surface of the wafer held by the polishing head is rubbed against the polishing pad so that it is polished while supplying the collected polishing agent to the tank to circulate the polishing agent, and the polishing apparatus is characterized in that the waste liquid receiver is fixed to the turntable. Consequently, it is possible to provide the polishing agent which can suppress mixture with other solutions at the time of collecting the polishing agent to be reused, can suppress degradation of collection efficiency of the polishing agent, and can be easily maintained.

The present invention provides a polishing composition which can achieve a high polishing speed for the layer containing copper and at the same time, can suppress dissolution of the layer containing cobalt, in polishing an object to be polished having a layer containing copper and a layer containing cobalt.

Disclosed is a polishing composition used for polishing an object to be polished having a layer containing copper and a layer containing cobalt, which comprises an oxidizing agent, and at least one cobalt dissolution inhibitor selected from the group consisting of a compound having a nitrogen-containing 5-membered ring structure, and an aminocarboxylic acid having two or more carboxyl groups.

A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear etch-pit groups observed in the main surface is equal to or less than the diameter of the substrate.

A polishing apparatus according to one embodiment includes: a turn table on which a polishing pad for polishing a substrate is provided; a turn table rotation mechanism configured to rotate the turn table; a dresser configured to dress the polishing pad by cutting a surface of the polishing pad; a pressing mechanism configured to press the dresser onto the polishing pad; a dresser rotation mechanism configured to rotate the dresser; a swinging mechanism configured to swing the dresser on the polishing pad; and a controller configured to control the pressing mechanism, the turn table rotation mechanism or the dresser rotation mechanism based on a position and a swinging direction of the dresser.

A. polishing agent for chemomechanically polishing a base having a carbon-based material and an insulating material to remove at least a part of the carbon-based material, the carbon-based material having a carbon content of 60 to 95 atm % as measured by X-ray photoelectron spectroscopy, the polishing agent comprising: an abrasive grain comprising silica; an allylamine-based polymer; and water, wherein a mass ratio of a content of the allylamine-based polymer with respect to a content of the abrasive grain is 0.002 to 0.400, and the abrasive grain has a positive charge in the polishing agent.

[Problem] An object is to provide a polishing composition which can improve smoothness of a surface of an alloy material to obtain a highly glossy surface, and can obtain a high-quality mirror surface having significantly reduced scratches or the like. [Solution] There is provided a polishing composition which is used for polishing an alloy material, and which comprises abrasive grains and an additive which does not form a complex with specific metal species and is adsorbed on a surface of the alloy to exhibit an anticorrosive effect.

[Problem] An object is to provide a polishing composition which can improve smoothness of a surface of an alloy material to obtain a highly glossy surface, and can obtain a high-quality mirror surface having significantly reduced scratches or the like. [Solution] There is provided a polishing composition which is used for polishing an alloy material, and which comprises abrasive grains and an additive which does not form a complex with specific metal species and is adsorbed on a surface of the alloy to exhibit an anticorrosive effect.

An elastomeric sanding block conformable to curved or flat surfaces includes a Shore A hardness ranging from about 30 to about 90, and is made from ethylene-vinyl acetate copolymer, low-density polyethylene or an admixture thereof. The polymer or admixture ranges from about 35 to about 70 percent of the sanding block composition by weight. A blowing agent is present in an amount that ranges from about 1.5 to about 4.5 percent of the composition by weight. The elastomeric sanding block may be formed by combining the polymer or admixture and other components under heat to yield a feedstock, thermoforming the feedstock in a mold to yield a foamed material sheet, and cutting the foamed material sheet.