One embodiment of the present invention relates to a polishing liquid for CMP containing cerium oxide particles and water, wherein the half-value width of the main peak appearing within a range from 2?=27.000 to 29.980? in a powder X-ray diffraction chart of the cerium oxide particles is from 0.26 to 0.36?, the average particle size of the cerium oxide particles is at least 130 nm but less than 175 nm, and the number of cerium oxide particles having a particle size of 1.15 ?m or greater is 5000?10.sup.3/mL or less.

A polishing apparatus includes: a turntable for supporting a polishing pad; a turntable rotation mechanism configured to rotate the turntable; a dresser configured to dress the polishing pad; and a scanning mechanism configured to cause the dresser to scan between a first position and a second position on the polishing pad, wherein Ttt/Tds and Tds/Ttt are a non-integer where the Ttt is a rotation cycle of the turntable during dressing, and the Tds is a scanning cycle during which the dresser scans between the first position and the second position.

A polisher head of a polishing apparatus includes a membrane and a first local pressure nodule and a second local pressure nodule physically contacting the membrane. The first local pressure nodule is configured to apply a first local force to the membrane and the second local pressure nodule is configured to apply a second local force to the membrane. The first local pressure nodule and the second local pressure nodule are independently controllable.

Provided is a treatment composition for chemical mechanical polishing, for treating an object to be treated including a wiring layer containing a metal, the treatment composition for chemical mechanical polishing containing: (A) a nitrogen-containing compound; (B) at least one kind of compound selected from the group consisting of a surfactant and polyacrylic acid; and (D) a pH adjusting agent, in which in terms of electrode charge transfer resistance value obtained by AC impedance measurement using the metal for an electrode, a sum of electrode charge transfer resistance values RA+RB in aqueous solutions each containing the component (A) or (B) and the component (D), and an electrode charge transfer resistance value RC in an aqueous solution containing the components (A), (B), and (D) have a relationship of RC/(RA+RB)>1.

A subject of this invention is to provide a dispersion liquid of a silica-based composite particle, which can rapidly polish silica film, Si wafer or even hard-to-process material, can concurrently achieve high surface accuracy (less scratches, etc.), and can suitably be used for surface polishing of semiconductor devices including semiconductor substrate and wiring board, by virtue of its impurity-free nature. The subject is solved by a dispersion liquid of a silica-based composite particle that contains a silica-based composite particle that has a core particle mainly composed of amorphous silica, and bound thereto a ceria particle mainly composed of crystalline ceria, further has a silica film that covers them.

A composition for glass and ceramic polishing has a polishing material including titanium dioxide particles covered, at least in part, with silicon dioxide. The composition has excellent applicability to CMP polishing, and has polishing material particles having a uniform particle size, thereby having no concerns about the occurrence of deformation or change of properties. The composition is capable of stably exhibiting excellent polishing characteristics and is not susceptible to polishing scratches, thereby enabling the achievement of a good smooth surface having less surface defects, while being capable of meeting wide polishing conditions from an acidic region to an alkaline region.

Provided is a polishing composition with which haze and surface defects can be reduced. This invention provides a polishing composition comprising a synthetic water-soluble polymer M.sub.L-end that has a hydrophobic region at least at one end of its main chain. The hydrophobic region has at least one hydrophobic group derived from a polymerization initiator.

Provided is a polishing composition with which haze and surface defects can be reduced. This invention provides a polishing composition comprising a synthetic water-soluble polymer M.sub.L-end that has a hydrophobic region at least at one end of its main chain. The hydrophobic region has at least one hydrophobic group derived from a polymerization initiator.

Provided is a polishing composition for semiconductor wiring providing an excellent polishing rate and preventing occurrence of dishing. The polishing composition for semiconductor wiring according to the present invention contains a compound represented by Formula (1) below:
R.sup.1O(C.sub.3H.sub.6O.sub.2).sub.nH(1) where R.sup.1 represents a hydrogen atom, a hydrocarbon group that has from 1 to 24 carbon atoms and may include a hydroxyl group, or a group represented by R.sup.2CO, where the R.sup.2 represents a hydrocarbon group having from 1 to 24 carbon atoms; and n represents an average degree of polymerization of glycerol units shown in the parentheses and is from 2 to 60.

Embodiments of the present disclosure generally provide apparatus for collecting and reuse polishing fluids and methods related thereto. In particular, the apparatus and methods provided herein feature a polishing fluid collection system used to collect and reuse polishing fluids dispensed during the chemical mechanical polishing (CMP) of a substrate in an electronic device manufacturing process. In one embodiment, a polishing fluid catch basin assembly includes a catch basin sized to surround at least a portion of a polishing platen and to be spaced apart therefrom. The catch basin features an outer wall, an inner wall disposed radially inward of the outer wall, and a base portion connecting the inner wall to the outer wall. The outer wall, the inner wall, and the base portion collectively define a trough. A radially inward facing surface of the inner wall is defined by an arc radius which is greater than a radius of the polishing platen the catch basin is sized to surround.