Embodiments of the present disclosure generally provide apparatus for collecting and reuse polishing fluids and methods related thereto. In particular, the apparatus and methods provided herein feature a polishing fluid collection system used to collect and reuse polishing fluids dispensed during the chemical mechanical polishing (CMP) of a substrate in an electronic device manufacturing process. In one embodiment, a polishing fluid catch basin assembly includes a catch basin sized to surround at least a portion of a polishing platen and to be spaced apart therefrom. The catch basin features an outer wall, an inner wall disposed radially inward of the outer wall, and a base portion connecting the inner wall to the outer wall. The outer wall, the inner wall, and the base portion collectively define a trough. A radially inward facing surface of the inner wall is defined by an arc radius which is greater than a radius of the polishing platen the catch basin is sized to surround.

In a substrate polishing apparatus where a polishing liquid passes through inside a rotary joint, the rotary joint requires maintenance. There is provided a substrate polishing apparatus that includes: a polishing head for holding a substrate; a rotary table that has a surface to which a first opening portion is provided; a polishing liquid discharge mechanism disposed to the rotary table; and a controller configured to control at least the polishing liquid discharge mechanism. The polishing liquid discharge mechanism includes a first cylinder, a first piston, and a driving mechanism that drives the first piston. The first opening portion is communicated with a liquid holding space defined by the first cylinder and the first piston. The controller controls the driving of the first piston by the driving mechanism to increase and decrease a volume of the liquid holding space.

The present invention is a polishing agent for a synthetic quartz glass substrate, containing polishing abrasive grains, a polishing accelerator, and water, wherein the polishing abrasive grains are wet ceria particles, and the polishing accelerator is a polyphosphoric acid, a salt thereof, a metaphosphoric acid, a salt thereof, a tungstic acid, or a salt thereof. There can be provided a polishing agent for a synthetic quartz glass substrate that has high polishing rate and can sufficiently reduce generation of defects due to polishing.

Disclosed is a polishing agent for synthetic quartz glass substrates, which is characterized by containing a colloidal solution of a colloidal silica or the like having a colloid concentration of 20-50% by mass, and a polycarboxylic acid polymer, an acidic amino acid, a phenol or a glycosaminoglycan.

Disclosed is a polishing agent for synthetic quartz glass substrates, which is characterized by containing a colloidal solution of a colloidal silica or the like having a colloid concentration of 20-50% by mass, and a polycarboxylic acid polymer, an acidic amino acid, a phenol or a glycosaminoglycan.

A method and an apparatus for processing a peripheral portion of a substrate, such as a wafer, are disclosed. The substrate processing method includes: holding a substrate on a substrate stage; rotating the substrate stage and the substrate about an axis of the substrate stage; directing a laser beam to an edge portion of the rotating substrate to form an annular crack in the substrate; and pressing a polishing tool against the edge portion of the rotating substrate to form a stepped recess in a peripheral portion of the substrate.

To perform polishing while reducing an LPD and preventing contamination with metals, particularly nickel and copper, in final polishing of a silicon wafer. A polishing composition contains abrasives, a water-soluble polymer, a basic compound, a chelating agent, and water, in which, when the particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, the particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and the particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is less than 1.7, A=(D90D50)/(D50D10) and the polishing composition is used for final polishing in silicon wafer polishing.

A polishing agent for polishing a resin comprises abrasive grains, a water-soluble polymer having an ether bond, an organic solvent and water, wherein the abrasive grains have a positive charge in the polishing agent and an average particle diameter of the abrasive grains is larger than 20 nm.

Provided is a polishing composition which can polish a sapphire substrate having a non-polar plane or a semi-polar plane at a high polishing rate. The invention is a polishing composition used in an application to polish a sapphire substrate having a non-polar plane or a semi-polar plane, the polishing composition containing colloidal silica particles and water, in which a value obtained by dividing a specific surface area (unit: m.sup.2/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles, that is, (specific surface area/number average particle diameter) is 0.5 or more and 3.0 or less.

Provided is a polishing composition which can polish a sapphire substrate having a non-polar plane or a semi-polar plane at a high polishing rate. The invention is a polishing composition used in an application to polish a sapphire substrate having a non-polar plane or a semi-polar plane, the polishing composition containing colloidal silica particles and water, in which a value obtained by dividing a specific surface area (unit: m.sup.2/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles, that is, (specific surface area/number average particle diameter) is 0.5 or more and 3.0 or less.