Provided is a polishing composition capable of keeping a good polishing removal rate stably. The polishing composition includes silica particles as abrasives and a basic compound as a polishing removal accelerator. The silica particles have a density of silanol groups that is 1.5 to 6.0 pieces/nm.sup.2. The polishing composition has an adsorption ratio parameter A that is 1.2 or less, the adsorption ratio parameter representing concentration dependency of an amount of adsorption of the basic compound to the silica particles as the ratio of high-concentration adsorption amount/low-concentration adsorption amount.

A wafer polishing apparatus includes a lower surface plate, an upper surface plate disposed over the lower surface plate, a carrier disposed between the lower surface plate and the upper surface plate and containing a wafer, and a lift unit lifting the carrier such that an upper surface of the carrier contacts a lower surface of the upper surface plate or lowering the carrier such that a lower surface of the carrier contacts an upper surface of the lower surface plate.

The purpose of the present invention is to provide a polishing pad that hardly generates scratches on a surface of a subject to be polished. This polishing pad is characterized in that: the polishing pad is provided with a polishing layer having a polishing region and a light-transmitting region; the light-transmitting region includes a surface layer positioned on the pad surface side, and at least one soft layer laminated under the surface layer, and the soft layer has a hardness lower than that of the surface layer.

A slurry for polishing a carbon-containing silicon oxide, the slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, a particle size of the second particles is smaller than a particle size of the first particles, the first particles contain cerium oxide, and the second particles contain a cerium compound.

An elastomeric sanding block conformable to curved or flat surfaces includes a Shore A hardness ranging from about 30 to about 90, and is made from ethylene-vinyl acetate copolymer, low-density polyethylene or an admixture thereof. The polymer or admixture ranges from about 35 to about 70 percent of the sanding block composition by weight. A blowing agent is present in an amount that ranges from about 1.5 to about 4.5 percent of the composition by weight. The elastomeric sanding block may be formed by combining the polymer or admixture and other components under heat to yield a feedstock, thermoforming the feedstock in a mold to yield a foamed material sheet, and cutting the foamed material sheet.

Provided is a composition for polishing a titanium alloy material, which enables polishing of a titanium alloy material at a high polishing speed and can provide a polished titanium alloy material having excellent surface smoothness and having a highly glossy surface after polishing.

The composition for polishing a titanium alloy material is a composition that is intended for polishing a titanium alloy material and comprises a compound having a function of dissolving at least one metal element other than titanium, which exists at a content of more than 0.5% by mass with respect to the total mass of the titanium alloy material, at a higher degree of solubility than that of titanium; and abrasive grains.

Abrasives, a polishing composition, and a polishing method that can reduce undulation of an outer surface of a resin coating by polishing with reduced occurrence of polishing flaws. The polishing composition includes abrasives of aluminium oxide particles having a specific surface area of 5 m.sup.2/g or more and 50 m.sup.2/g or less and an average secondary particle diameter of 0.05 μm or more and 4.8 μm or less. This polishing composition can be used for polishing an outer surface of the resin coating.

Abrasives, a polishing composition, and a polishing method that can reduce undulation of an outer surface of a resin coating by polishing with reduced occurrence of polishing flaws. The polishing composition includes abrasives of aluminium oxide particles having a specific surface area of 5 m.sup.2/g or more and 50 m.sup.2/g or less and an average secondary particle diameter of 0.05 μm or more and 4.8 μm or less. This polishing composition can be used for polishing an outer surface of the resin coating.

This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.