According to an aspect, a detection device includes: photodiodes arranged on a substrate; and a front light comprising a light guide plate disposed so as to overlap the photodiodes, a first light source configured to emit first light to a first side surface of the light guide plate, a second light source configured to emit second light having the same wavelength as that of the first light to a second side surface of the light guide plate opposite to the first side surface, a third light source configured to emit third light having a wavelength different from that of the first light to a third side surface of the light guide plate different from the first and second side surfaces, and scattering portions provided on the light guide plate and configured to scatter light from any of the first light source, the second light source, and the third light source.

According to an aspect, a detection device includes: photodiodes arranged on a substrate; and a front light comprising a light guide plate disposed so as to overlap the photodiodes, a first light source configured to emit first light to a first side surface of the light guide plate, a second light source configured to emit second light having the same wavelength as that of the first light to a second side surface of the light guide plate opposite to the first side surface, a third light source configured to emit third light having a wavelength different from that of the first light to a third side surface of the light guide plate different from the first and second side surfaces, and scattering portions provided on the light guide plate and configured to scatter light from any of the first light source, the second light source, and the third light source.

A display device includes a thin-film transistor layer disposed on a substrate and including thin-film transistors; and an emission material layer disposed on the thin-film transistor layer. The emission material layer includes light-emitting elements each including a first light-emitting electrode, an emissive layer and a second light-emitting electrode, light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer and a second light-receiving electrode, and a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements. The light-receiving elements are disposed on the first bank.

A display device includes a thin-film transistor layer disposed on a substrate and including thin-film transistors; and an emission material layer disposed on the thin-film transistor layer. The emission material layer includes light-emitting elements each including a first light-emitting electrode, an emissive layer and a second light-emitting electrode, light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer and a second light-receiving electrode, and a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements. The light-receiving elements are disposed on the first bank.

A sensor for measuring objects is provided. The sensor comprises a plurality of light-emitting elements and at least one of light-receiving element(s). The light-emitting elements are each provided at a different position on a substrate. The light-receiving element is provided on the substrate. The light-receiving element receives, as main light, one reflected light from among reflected light attributed to each light-emitting element, and receives, as crosstalk light, reflected light other than the main light in a manner such that the crosstalk light can be distinguished from the main light. The reflected light is emitted from each of the light-emitting elements and reflected from an object. On the basis of the crosstalk light and main light that are received in a distinguishable manner, spatial physical quantities related to a reference plane of the sensor and the object are measured.

Disclosed are a photodiode element, and a sensor and an electronic device including the same. The photodiode element includes a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and the second electrode and having an absorption spectrum in a first wavelength spectrum, a light-emitting layer between the photoelectric conversion layer and the second electrode and having an emission peak wavelength belonging to the first wavelength spectrum, and a first charge transport layer between the photoelectric conversion layer and the light-emitting layer.

The present invention relates to an integration method for a modularized silicon-based heterogeneous photoelectric integrated architecture. According to the integration method, a modularized form is adopted, different functional units are used as individual unit modules, and then different types of integrated architectures are formed through customized increase and decrease in different usage scenarios. Among them, customized combinations of one unit module, two unit modules up to five unit modules can be adopted to construct up to 22 types of module-combined integrated architectures. By adopting a modularized solution, various functional materials can be easily selected and combined, thus improving a degree of freedom of integration and reducing costs.

The present invention relates to an integration method for a modularized silicon-based heterogeneous photoelectric integrated architecture. According to the integration method, a modularized form is adopted, different functional units are used as individual unit modules, and then different types of integrated architectures are formed through customized increase and decrease in different usage scenarios. Among them, customized combinations of one unit module, two unit modules up to five unit modules can be adopted to construct up to 22 types of module-combined integrated architectures. By adopting a modularized solution, various functional materials can be easily selected and combined, thus improving a degree of freedom of integration and reducing costs.

According to an aspect, a detection device includes: a ring-shaped housing; a light source provided in the housing; a first optical sensor provided in the housing so as to be adjacent to one end of the light source in a circumferential direction of the housing; and a second optical sensor provided in the housing so as to be adjacent to the other end of the light source in the circumferential direction of the housing. At least the first optical sensor is an organic photodiode including a sensor substrate, a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode.

Devices and methods for analyzing polymer arrays formed on integrated surfaces of microLEDs. One microarray includes a plurality of individually controllable microLED elements, a plurality of photodetector elements, an integrated surface, and a CMOS driver chip. Each microLED element is paired with a photodetector element. The CMOS driver chip controls activation of the microLED elements and the photodetector elements.