The semiconductor device includes a high electron mobility transistor (HEMT) and a light emitter. The HEMT has a nucleation layer, buffer layer, channel layer, barrier layer, source and drain electrodes, p-doped III-V layer, and gate electrode. The nucleation layer is on a substrate, with the buffer and channel layers stacked above it. A 2DEG region forms at the interface between the channel and barrier layers. The source and drain electrodes are on the barrier layer, and the p-doped III-V layer is formed to achieve a desired threshold voltage. The gate electrode is placed between the source and drain. The light emitter is positioned above the HEMT, emitting an optical signal synchronized with the gate drive signal to create a synchronous optoelectronic-gated switch.

A display device provided with an image capturing function is provided. A display device with both high viewing angle characteristics and high image capturing performance is provided. The display device includes a light-emitting and light-receiving element and a color filter. The light-emitting and light-receiving element includes a light-emitting and light-receiving region having a function of emitting light of the first color and a function of receiving light of the second color. The color filter is positioned over the light-emitting and light-receiving element and has a function of transmitting the light of the first color and a function of blocking the light of the second color. The color filter includes an opening portion. The light-emitting and light-receiving region includes a portion positioned in the inside of the opening portion in the plan view.

An imaging device or a display device that is capable of clearly capturing an image of a fingerprint or the like can be provided. The display device includes a light-receiving element, a light-emitting element, a first substrate, a second substrate, a first resin layer, a second resin layer, and a light-blocking layer. The first resin layer, the second resin layer, and the second substrate are stacked over the first substrate. The light-receiving element and the light-emitting element are positioned between the first substrate and the first resin layer. The light-blocking layer is positioned between the first resin layer and the second resin layer and includes an opening portion overlapping with the light-receiving element. The opening portion in the light-blocking layer is positioned on an inner side of a light-receiving region of the light-receiving element in a plan view, and the width of the opening portion is less than or equal to the width of the light-receiving region. The second substrate is thicker than the first resin layer and the second resin layer. The thickness of a portion of the first resin layer, which overlaps with the light-receiving region of the light-receiving element, is greater than or equal to one time and less than or equal to 10 times as large as the width of the light-receiving region. The second substrate has a higher refractive index than the first resin layer and the second resin layer.

According to an aspect, a detection device includes: a photodiode; a first light source and a second light source; a light source drive circuit configured to control lighting of the first and second light sources; and a detection circuit configured to output a sensor value corresponding to a photocurrent output from the photodiode. The detection circuit has readout periods and is configured to measure an integrated value of the photocurrent during each readout period. The light source drive circuit has a first mode in which the first and second light sources are alternately lit during the readout periods and a second mode in which one of the first and second light sources is lit during the readout periods. The readout periods include a first readout period in the first mode and a second readout period having a different length of time from the first readout period in the second mode.

A lighting device including a light source module including a housing, a substrate disposed on the housing, a light source disposed on the substrate, and a resin layer disposed on the substrate to cover up the light source, and a sensor placed outside the housing to be spaced apart from the housing in a direction where signal from the sensor moves. In addition, the housing is formed with a material through which the signal from the sensor passes.

An optocoupler includes a GaN-based Light Emitting Diode (LED) and a GaN-based photo-detector, where at least one of the LED and photo-detector is a flip chip. In some embodiments, the photo-detector comprises a GaN-based LED configured to operate as a photo-detector.

The semiconductor light-emitting device includes: a substrate; a light-receiving chip that includes a light-receiving element having a light-receiving surface formed on the chip surface; an edge-emitting chip that has a first light-emitting surface that emits first laser beam and a second light-emitting surface that emits second laser beam in an opposite direction, and that is joined to a position different from the light-receiving surface on the chip surface; a sealing member with a material through which the first and second laser beams can pass, the sealing member covering the edge-emitting chip and the light-receiving chip; and a reflection part provided in the sealing member and that reflects at least a portion of the second laser beam toward the light-receiving surface. The light-receiving surface is formed in a position on the chip surface for receiving at least a part of the reflected light by the reflection part.

The present disclosure relates to packaging techniques in connection with packaging electrical and optical components within circuit packages. For example, one or more examples described herein involve producing or manufacturing wafers having circuit packages formed thereon. Techniques described herein related to modifying a dimension of wafers in order that the wafers conform to a nominal dimension, such that the wafers may be implemented in connection with processing equipment that is specifically configured to operate on wafers of the nominal dimension.

The present disclosure relates to packaging techniques in connection with packaging electrical and optical components within circuit packages. For example, one or more examples described herein involve producing or manufacturing wafers having circuit packages formed thereon. Techniques described herein related to modifying a dimension of wafers in order that the wafers conform to a nominal dimension, such that the wafers may be implemented in connection with processing equipment that is specifically configured to operate on wafers of the nominal dimension.

The present invention comprises a chip, a cooling substrate is formed over the first surface of the cooling substrate, a cooling channel is formed on the cooling substrate to dissipate the heat generated by the chip, wherein the cooling channel includes a cooling liquid or gas; a power substrate is provided and the power substrate includes a power grid to provide power to the chip from the second surface of the chip. The chip, the cooling substrate, and the power substrate are stacked together.