H10F55/00

CAPPED SEMICONDUCTOR BASED SENSOR AND METHOD FOR ITS FABRICATION
20250048775 · 2025-02-06 ·

A method for fabricating semiconductor based sensor devices with sensors which are in communication with the environment surrounding the sensor devices, and such a sensor device is described. The method comprises the steps of providing a semiconductor-based device wafer, fabricating a plurality of sensors on the semiconductor-based device wafer, providing a capping wafer, and attaching the capping wafer on the device wafer with each sensor arranged below a recess of the capping wafer. The capping wafer comprises at least one gas permeable section between each recess and the second side, to provide a gas passage between the recess and the environment surrounding the sensor device. The method further comprises the steps of applying a protective layer on all gas permeable sections of the capping wafer, dividing the device wafer and the attached capping wafer into individual sensor devices, and removing the protective layer from all gas permeable sections.

Optical semiconductor device
09704840 · 2017-07-11 · ·

The present invention provides an optical semiconductor device for improving minimization and increase of detection precision. An optical semiconductor device A1 of the present invention includes: a substrate 1, including a semiconductor material, and including a main surface 111 and a back surface 112; a semiconductor light-emitting element 7A at the substrate; a semiconductor light-receiving element 7B at the substrate; a conductive layer 3, conducting the semiconductor light-emitting element 7A and the semiconductor light-receiving element 7B; and an insulating layer 2 between at least a portion of the conductive layer 3 and the substrate; wherein the substrate 1 includes a recess 14 recessed from the main surface 111 and including a bottom surface 142A of a light-emitting side recess where the semiconductor light-emitting element 7A is disposed, and a bottom surface 142B of a light-receiving side recess where the semiconductor light-receiving element 7B is disposed; a light-emitting side transparent portion 18A for light from the semiconductor light-emitting element 7A to pass through the bottom surface 142A of the light-emitting side recess to the back surface 112; and a light-receiving side transparent portion 18B for light from the back surface 112 to pass through the bottom surface 142B of the light-receiving side recess to the semiconductor light-receiving element 7B.

OPTICAL COUPLING DEVICE

An optical coupling device includes a primary conductive plate, a light-emitting part, a secondary conductive plate, a light-receiving part, and a first conductive part. The light-emitting part is located on the primary conductive plate, converts an electrical signal to light, and emits the light. The secondary conductive plate is spaced apart from the primary conductive plate, and faces the light-emitting part. The light-receiving part is disposed on the secondary conductive plate to face the light-emitting part, and converts light from the light-emitting part to an electrical signal. The first conductive part is disposed at a side facing the light-emitting part, and has a point on which an electric field generated by a potential difference between the primary conductive plate and the secondary conductive plate is concentrated.

METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT
20170186911 · 2017-06-29 ·

A method is specified for producing an optoelectronic semiconductor component, comprising the following steps: A) providing a structured semiconductor layer sequence (21, 22, 23) having a first semiconductor layer (21) with a base region (21c), at least one well (211), and a first cover region (21a) in the region of the well (211) facing away from the base surface (21c), an active layer (23), and a second semiconductor layer (22) on a side of the active layer (23) facing away from the first semiconductor layer (21), wherein the active layer (23) and the second semiconductor layer (22) are structured jointly in a plurality of regions (221, 231) and each region (221, 231) forms, together with the first semiconductor layer (21), an emission region (3), B) simultaneous application of a first contact layer (41) on the first cover surface (21a) and a second contact layer (42) on a second cover surface (3a) of the emission regions (3) facing away from the first semiconductor layer (21) in such a way that the first contact layer (41) and the second contact layer (42) are electrically separated from each other, and the first contact layer (41) and the second contact layer (42) run parallel to each other.

PACKAGED SEMICONDUCTOR DEVICES AND RELATED METHODS

A packaged semiconductor device includes a substrate, a die, at least one electrical connector, a first mold compound formed of translucent material, and a second mold compound. A first face of the die is electrically and mechanically coupled to the substrate. The at least one electrical connector electrically couples at least one electrical contact on a second face of the die with at least one conductive path of the substrate. The first mold compound formed of a translucent material at least partially encapsulates the die and the at least one electrical connector. The second mold compound at least partially encapsulates the first mold compound and forms a window through which the first mold compound is exposed. In implementations the second mold compound is opaque and the first mold compound is transparent. In implementations the substrate includes a lead frame having a die flag and a plurality of lead frame fingers.

RESIN PANEL FOR INFRARED SENSOR, AND INFRARED SENSOR AND ARTICLE EMPLOYING SAID RESIN PANEL
20250052620 · 2025-02-13 ·

Provided is a resin panel which, when applied as a protective cover of an infrared sensor, can inhibit an infrared sensor from being deteriorated in accuracy. A resin panel for an infrared sensor, the resin panel comprising a resin layer and a plastic film, as well as comprising a conductive layer and a pressure-sensitive adhesive layer between the resin layer and the plastic film, and satisfying at least one of the following expressions (1) and (2): 50 mthickness of the pressure-sensitive adhesive layer . . . (1); and 30TY.sup.3 . . . (2); wherein T represents a thickness (unit: m) of the plastic film, and Y represents a Young's modulus (unit: GPa) of the plastic film.

TRANSPARENT DISPLAY DEVICE
20250054421 · 2025-02-13 · ·

A transparent display device comprises: a first base comprising a light-transmissive material; a plurality of light sources disposed on the first base; a display PCB positioned at the end of the first base; a transparent electrode connecting the light sources and the display PCB to each other; a second base covering the light sources; a photoactive layer formed in either the first base or the second base to convert sunlight into electrical energy; and a third base covering the photoactive layer. The transparent display device can self-produce and self-supply power and thus is easy to install.

DISPLAY SUBSTRATE, DISPLAY DEVICE AND REMOTE CONTROL SYSTEM
20170139497 · 2017-05-18 ·

A display substrate, a display device and a remote control system are provided in order to solve a problem that the existing touch technology is not capable of touching and controlling accurately any region in the display device distant from a user. The display substrate comprises a base substrate, color filters located on the base substrate and at least one optical recognition structure which is located at least partially in non-display regions of the display substrate and is configured to sense an irradiation of a predefined light beam to generate a voltage signal and transmit the voltage signal to an external circuit through a signal line connected to the optical recognition structure.

Method and apparatus to facilitate direct surface cooling of a chip within a 3D stack of chips using optical interconnect

In one embodiment, the disclosure relates to a system of stacked and connected layers of circuits that includes at least one pair of adjacent layers having very few physical (electrical) connections. The system includes multiple logical connections. The logical interconnections may be made with light transmission. A majority of physical connections may provide power. The physical interconnections may be sparse, periodic and regular. The exemplary system may include physical space (or gap) between the a pair of adjacent layers having few physical connections. The space may be generally set by the sizes of the connections. A constant flow of coolant (gaseous or liquid) may be maintained between the adjacent pair of layers in the space.

DEVICE PROVIDED WITH AN OPTIMISED PHOTOVOLTAIC NETWORK PLACED IN FRONT OF AN IMAGE

A network of photovoltaic strips positioned in front of an image causes a decrease in the luminosity of said image, which is not uniform for all of the colours and causes an optical moir phenomenon that is perceived by the observer when they change their viewing angle. In order to rectify said decrease in visual quality of the image, the invention describes a suitable positioning and dimension of the photovoltaic strips in relation to the inter-pixels of the image.