H10F55/00

Heterostructure optoelectronic device for emitting and detecting electromagnetic radiation, and manufacturing process thereof

An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

ARRAY SUBSTRATE, DISPLAY SUBSTRATE AND DISPLAY DEVICE

This disclosure provides an array substrate, including: a display region and a peripheral region. The peripheral region includes at least one first sensor. The first sensor includes a photodiode and a driving circuit which are electrically connected to each other. The photodiode includes: an anode, a cathode and a photosensitive material layer. The array substrate includes: a base substrate, a plurality of thin film transistors, a common electrode and a pixel electrode. The common electrode is reused as an anode of the photodiode. The pixel electrode is reused as a cathode of the photodiode. One of the plurality of thin film transistors is reused as a first transistor of the driving circuit.

ARRAY SUBSTRATE, DISPLAY SUBSTRATE AND DISPLAY DEVICE

This disclosure provides an array substrate, including: a display region and a peripheral region. The peripheral region includes at least one first sensor. The first sensor includes a photodiode and a driving circuit which are electrically connected to each other. The photodiode includes: an anode, a cathode and a photosensitive material layer. The array substrate includes: a base substrate, a plurality of thin film transistors, a common electrode and a pixel electrode. The common electrode is reused as an anode of the photodiode. The pixel electrode is reused as a cathode of the photodiode. One of the plurality of thin film transistors is reused as a first transistor of the driving circuit.

Electronic package and electronic device

The present disclosure provides an electronic package. The electronic package includes a substrate, a first component disposed on the substrate and configured to detect an external signal, and an encapsulant disposed on the substrate. The electronic package also includes a protection element disposed on the substrate and physically separating the first device from the encapsulant and exposing the first device. The present disclosure also provides an electronic device.

Semiconductor package

A semiconductor package includes a PDA chip, a MOS chip, and a wiring plate including a first principal surface and a second principal surface, the first principal surface being provided with a first rigid plate that is non-conductive and a second rigid plate that is conductive, the PDA chip being fixed to the first rigid plate by using a non-conductive bonding agent, a lower surface terminal of the MOS chip being soldered to the second rigid plate, the second principal surface being provided with an input terminal and an output terminal, the input terminal being electrically connected to the PDA chip, the output terminal being electrically connected to the second rigid plate.

Displays with camera window openings

A display may include a color filter layer, a liquid crystal layer, and a thin-film transistor layer. A camera window may be formed in the display to accommodate a camera. The camera window may be formed by creating a notch in the thin-film transistor layer that extends inwardly from the edge of the thin-film transistor layer. The notch may be formed by scribing the thin-film transistor layer around the notch location and breaking away a portion of the thin-film transistor layer. A camera window may also be formed by grinding a hole in the display. The hole may penetrate partway into the thin-film transistor layer, may penetrate through the transistor layer but not into the color filter layer, or may pass through the thin-film transistor layer and partly into the color filter layer.

Displays with camera window openings

A display may include a color filter layer, a liquid crystal layer, and a thin-film transistor layer. A camera window may be formed in the display to accommodate a camera. The camera window may be formed by creating a notch in the thin-film transistor layer that extends inwardly from the edge of the thin-film transistor layer. The notch may be formed by scribing the thin-film transistor layer around the notch location and breaking away a portion of the thin-film transistor layer. A camera window may also be formed by grinding a hole in the display. The hole may penetrate partway into the thin-film transistor layer, may penetrate through the transistor layer but not into the color filter layer, or may pass through the thin-film transistor layer and partly into the color filter layer.

ASIC package with photonics and vertical power delivery

The technology relates to an integrated circuit (IC) package. The IC package may include a substrate. An IC die may be mounted to the substrate. One or more photonic modules may be attached to the substrate and one or more serializer/deserializer (SerDes) interfaces may connect the IC die to the one or more photonic modules. The IC die may be an application specific integrated circuit (ASIC) die and the one or more photonic modules may include a photonic integrated circuit (PIC) and fiber array. The one or more photonic modules may be mounted to one or more additional substrates which may be attached to the substrate via one or more sockets.

TRANSISTOR OUTLINE PACKAGE AND PRODUCTION METHOD THEREOF, OPTICAL SUB-ASSEMBLY, OPTICAL MODULE, AND OPTICAL COMMUNICATION SYSTEM

An example transistor outline package includes an accommodation cavity formed by a transistor cap and a transistor base. A main lens is disposed on a top of the transistor cap and runs through the transistor cap, and is configured to transmit a total light ray. The total light ray includes a first light ray and a second light ray. A first chip, a second chip, and an optical splitting component are disposed in the accommodation cavity. The first light ray is transmitted between the first chip and the main lens, and the first chip is an optical transmitter chip. The second light ray is transmitted between the second chip and the main lens. The optical splitting component is disposed between the first chip and the main lens and is configured to adjust a transmission direction of the first light ray.

WIRELESS, OPTICALLY-POWERED OPTOELECTRONIC SENSORS

The technology disclosed in this patent document can be used to construct devices with opto-electronic circuitry for sensing and identification applications, to provide untethered devices for deployment in living objects and other applications, and to provide fabrication techniques for making such devices for commercial production. As illustrated by specific examples disclosed herein, the disclosed technology can be implemented to provide fabrication methods, substrates, and devices that enable wireless, inorganic cell-scaled sensor and identification systems that are optically-powered and optically-readout.