The invention relates to a three-dimensional magnetic field detection device (1) which comprises three soft-magnetic bodies (21, 22) and a magnetic field detection element (3, 12, 13, 14) comprising three GSR elements. For three axial directions that are orthogonal to each other at an origin point that is the center point of measurement, the invention measures, for a first axial direction, a first-axial-direction magnetic field using two elements sandwiching the origin point, measures, for a second axial direction, a second-axial-direction magnetic field through disposing one element at the position of the origin point, and measures, for a third axial direction, a third-axial-direction magnetic field through combining the two elements for the first axial direction and the three soft-magnetic bodies and forming two crank-shaped magnetic circuits having point symmetry.

A method for fabricating an electronic device including a semiconductor memory may include forming a buffer layer over a substrate, the buffer layer operable to aide in crystal growth of an under layer; forming the under layer over the buffer layer, the under layer operable to aide in crystal growth of a free layer; and forming a Magnetic Tunnel Junction (MTJ) structure including the free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer over the under layer.

An electromagnetic sensing device with a package substrate, a first die mounted on the package substrate, and a second die mounted on the package substrate. The first die includes a first integrated circuit and a first magnetic core formed above the first integrated circuit. The first magnetic core has a first sensing axis parallel to a planar surface of the package substrate. The second die includes a second integrated circuit and a second magnetic core formed above the second integrated circuit. The second magnetic core has a second sensing axis orthogonal to the planar surface of the package substrate.

Magneto-electric spin orbital (MESO) structures having functional oxide vias, and method of fabricating magneto-electric spin orbital (MESO) structures having functional oxide vias, are described. In an example, a magneto-electric spin orbital (MESO) device includes a source region and a drain region in or above a substrate. A first via contact is on the source region. A second via contact is on the drain region, the second via contact laterally adjacent to the first via contact. A plurality of alternating ferromagnetic material lines and non-ferromagnetic conductive lines is above the first and second via contacts. A first of the ferromagnetic material lines is on the first via contact, and a second of the ferromagnetic material lines is on the second via contact. A spin orbit coupling (SOC) via is on the first of the ferromagnetic material lines. A functional oxide via is on the second of the ferromagnetic material lines.

A magnetic memory device may include magnetic tunnel junction patterns on a substrate, a conductive line extending between the substrate and the magnetic tunnel junction patterns and in contact with bottom surfaces of the magnetic tunnel junction patterns, and a bottom pattern located between the conductive line and the substrate and in contact with a bottom surface of the conductive line. The material of the conductive line may have a first lattice constant, and the material of the bottom pattern may have a second lattice constant that is less than the first lattice constant of the conductive line. Alternatively or additionally, the bottom pattern includes a metal nitride, and a nitrogen content of the bottom pattern is higher than a metal element content of the metal element.

A STT-MRAM comprises apparatus, a method of operating a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having a bias voltage controlled perpendicular anisotropy of a recording layer through an interlayer interaction to achieve a lower spin-transfer switching current. The anisotropy modification layer is under an electric field along a perpendicular direction with a proper voltage between a digital line and a bit line from a control circuitry, accordingly, the energy switch barrier is reduced in the spin-transfer recording while maintaining a high thermal stability and a good retention.

A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a non-magnetic spacer layer on the first ferromagnetic layer, where the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V; a second ferromagnetic layer on the non-magnetic spacer layer; and an oxide layer on the second ferromagnetic layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current. A thickness and composition of the non-magnetic spacer layer may be selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage.

A method is for manufacturing a magnetic-tunnel-junction (MTJ) device. The method includes forming a free magnetic layer over a substrate, forming a metal layer over the free magnetic layer, and oxidizing the metal layer by exposing the metal layer to an oxidation gas at a temperature of 250 K or less.

An ultra-small diameter and a tall bottom electrode for use in magnetic random access memory (MRAM) devices containing a multilayered MTJ pillar is provided. The bottom electrode is formed by depositing a thick bottom electrode layer on a surface of a metallic etch stop layer. The bottom electrode layer is then patterned by lithography and etching to provide a bottom electrode structure. An angled ion beam etch is thereafter used to trim the bottom electrode structure into a bottom electrode having a high aspect ratio (on the order of 10:1 or greater).