An integrated circuit includes a magnetic field sensor and an injection molded magnetic material enclosing at least a portion of the magnetic field sensor.

A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of MTJ layers is provided on a bottom electrode. A top electrode is provided on the MTJ stack. The top electrode is patterned. Thereafter, the MTJ stack not covered by the patterned top electrode is oxidized or nitridized. Then, the MTJ stack is patterned to form a MTJ device wherein any sidewall re-deposition formed on sidewalls of the MTJ device is non-conductive and wherein some of the dielectric layer remains on horizontal surfaces of the bottom electrode.

Methods of magnetically shielding an MRAM structure on all six sides in a thin wire or thin flip chip bonding package and the resulting devices are provided. Embodiments include forming a first metal layer embedded between an upper and a lower portion of a PCB substrate, the first metal layer having a pair of metal filled vias laterally separated; attaching a semiconductor die to the upper portion of the PCB substrate between the pair of metal filled vias; connecting the semiconductor die electrically to the PCB substrate through the pair of metal filled vias; removing a portion of the upper portion of the PCB substrate outside of the pair of metal filled vias down to the first metal layer; and forming a second metal layer over and on four opposing sides of the semiconductor die, the second metal layer landed on the first metal layer.

The vertical Hall element includes: a second conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate; a plurality of high-concentration second conductivity type electrodes formed in a straight line on a surface of the semiconductor layer having substantially the same shape, and spaced at a first interval; a plurality of electrode isolation layers each formed between two electrodes out of the plurality of electrodes to isolate the plurality of electrodes from one another having substantially the same shape, and spaced at a second interval; and a first added layer and a second added layer each formed along the straight line outside of the outermost electrodes, and each having substantially the same structure as that of each electrode isolation layer.

A table comprising a table base and a tabletop is disclosed. The table base comprises a top surface comprising a rotatable portion comprising one or more permanent magnets. The rotatable portion rotates independently from the table base. At least a portion of the tabletop comprises a ferromagnetic material. The tabletop further comprises a usable first side and a usable second side alternately mounted to the table base by an attractive force between the ferromagnetic material and the one or more permanent magnets. Rotation of the rotatable portion of the top surface, such that the one or more permanent magnets are oriented away from the ferromagnetic material, engages or disengages the attractive force.

A key that includes a body with an optically transmissive or light permeable region and an optical film coupled to or carried by the light permeable region is disclosed. The key also includes a resilient structure coupled to the body. The key can be assembled or coupled to, or disposed relative or adjacent to, a display screen. The key also includes a switch actuator (e.g., an electromechanical switch actuator or contact element). Displacement of the key, more specifically the body of the key, displaces the switch actuator for actuating a switch. The resilient structure is configured to bias the body at a first position. The body can be actuated or displaced from the first position to a second position for effectuating corresponding displacement of the switch actuator and actuation of the switch. The resilient structure provides a positive tactile feedback upon user-directed or user-controlled actuation or displacement of the body.

A nonvolatile magnetic memory device having a magnetoresistance-effect element includes: (A) a laminated structure having a recording layer in which an axis of easy magnetization is oriented in a perpendicular direction; (B) a first wiring line electrically connected to a lower part of the laminated structure; and (C) a second wiring line electrically connected to an upper part of the laminated structure, wherein a high Young's modulus region having a Young's modulus of a higher value than that of a Young's modulus of a material forming the recording layer is provided close to a side surface of the laminated structure.

A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

A read sensor that includes a free layer having a magnetization that changes according to an external magnetic field. The read sensor also includes an additional magnetic layer and a non-magnetic layer. The non-magnetic layer may include a corrugated surface facing the additional magnetic layer. The corrugated surface is configured to enhance uniaxial anisotropy in the read sensor.

Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry. In some embodiments, the magnetoresistive device structures are designed such that the devices are able to fit within the vertical dimensions of the integrated circuit associated with a single metal layer and a single layer of interlayer dielectric material. Integrating the processing for the magnetoresistive devices can include using the same standard interlayer dielectric material as used in the surrounding circuits on the integrated circuit as well as using standard vias to interconnect to at least one of the electrodes of the magnetoresistive devices.