A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.

A multilayered magnetic thin-film stack including a tunneling barrier layer; a magnetic finned layer formed on a first surface of the tunneling barrier layer; and a magnetic free layer formed on a second surface of the tunneling barrier layer, which is opposite to the first surface, wherein at least one of the magnetic finned layer and the magnetic free layer includes a FeZr alloy layer and a first magnetic layer having a (001) bcc structure between the FeZr alloy layer and the tunneling barrier layer.

Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry. In some embodiments, the magnetoresistive device structures are designed such that the devices are able to fit within the vertical dimensions of the integrated circuit associated with a single metal layer and a single layer of interlayer dielectric material. Integrating the processing for the magnetoresistive devices can include using the same standard interlayer dielectric material as used in the surrounding circuits on the integrated circuit as well as using standard vias to interconnect to at least one of the electrodes of the magnetoresistive devices.

A semiconductor memory device may include a pillar, a gate and at least one ferroelectric layer. The pillar may include a source, a drain and a channel region. The drain may be arranged over the source. The channel region may be arranged between the source and the drain. The gate may be formed on an outer surface of the pillar. The ferroelectric layer may be interposed between the pillar and the gate.

According to one embodiment, a magnetoresistive memory device, includes a metal buffer layer provided on a substrate, a crystalline metal nitride buffer layer provided on the metal buffer layer, and a magnetoresistive element provided on the metal nitride buffer layer. The metal nitride buffer layer and the metal buffer layer contain a same material.

Magnetoelectronic components comprise at least one oblong working structure made of a ferromagnetic material, along which magnetic domain walls can migrate, means for applying an electric current to this working structure, and at least one magnetic field sensor for the magnetic field generated by the working structure. The working structure is designed so that it is able to form domain walls, the transverse magnetization direction of which in the center has no preferred direction in the plane perpendicular to the migration direction thereof along the working structure, and/or can form massless domain walls. It was found that the kinetic energy of such moving domain walls vanishes. These walls are thus not subject to the Walker limit nor to intrinsic pinning. As a result, the components can read, store or process and finally output information more quickly. The invention also relates to a method for measuring the non-adiabatic spin transfer parameter of a ferromagnetic material. This method was developed as part of a more in-depth examination of the phenomena that were found.

A spintronic wireless communication system for simultaneously modulating multiband frequencies and amplitudes includes a plurality of spin-torque transfer devices which have different frequency characteristics from each other, and OOK modulate or multi-level ASK modulate input data to thereby output a multiband OOK modulation signal or a multiband, multi-level ASK modulation signal; a plurality of matching networks which match individual impedances of the plurality of spin-torque transfer devices; and a broadband antenna which receives the multiband OOK modulation signal or the multiband, multi-level ASK modulation signal from ends of the plurality of matching networks and simultaneously transmits the signals to the outside.

A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.

A magnetic tunnel junction (MTJ) and methods for fabricating a MTJ are described. An MTJ includes a fixed layer and a barrier layer on the fixed layer. Such an MTJ also includes a free layer interfacing with the barrier layer. The free layer has a crystal structure in accordance with the barrier layer. The MTJ further includes an amorphous capping layer interfacing with the free layer.

A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a free layer, a pinned layer and a nonmagnetic spacer layer between the free layer and the pinned layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the step of providing the free layer includes a first plurality of steps and the step of providing the pinned layer includes a second plurality of steps. The first and second plurality of steps include depositing a portion of a layer, depositing a sacrificial layer, annealing the portion of the magnetic junction under the sacrificial layer, and depositing a remaining portion of the layer. The layer may be the free layer, the pinned layer, or both.