A nanodevice capable of controlling the state of electric charge of a metal nanoparticle is provided. The device includes: nanogap electrodes 5 including one electrode 5A and the other electrode 5B disposed so as to have a nanosize gap in between; a nanoparticle 7 placed between the nanogap electrodes 5; and a plurality of gate electrodes 9. At least one of the plurality of gate electrodes 9 is used as a floating gate electrode to control the state of electric charge of the nanoparticle 7, which achieves a multivalued memory and rewritable logical operation.

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to integrated circuit fabrics including correlated electron switch devices having various impedance characteristics.

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, a correlated electron material may be doped using dopant species derived from one or more precursors utilized to fabricate nearby structures such as, for example, a conductive substrate or a conductive overlay.

Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

A phononic transistor can be realized by arranging a row of cantilevered structures with attached magnets, elastically extending upward upon application of a magnetic repulsive force to the magnets. In the extended configuration, the phonons are transmitted from source to drain, while in the flattened configuration the phonons are blocked from transmission. A gate element controls the ON and OFF states of the phononic transistor.

The generation of photocurrent in an ideal two-dimensional Dirac spectrum is symmetry forbidden. In sharp contrast, a three-dimensional Weyl semimetal can generically support significant photocurrent due to the combination of inversion symmetry breaking and finite tilts of the Weyl spectrum. To realize this photocurrent, a noncentrosymmetric Weyl semimetal is coupled to a pair of electrodes and illuminated with circularly polarized light without any voltage applied to the Weyl semimetal. The wavelength of the incident light can range over tens of microns and can be adjusted by doping the Weyl semimetal to change its chemical potential.

A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator includes source, channel and drain regions form by epitaxy operations. A thickness of the portions of the gate conductor decreases in the vicinity of the channel region.

Subject matter disclosed herein may relate to devices formed from correlated electron material.

A method of mass spectrometry is disclosed comprising passing ions through a first stage and a second stage of a mass spectrometer and monitoring a first ion acquisition for a first dwell time extending from a time T.sub.1 to a time T.sub.1+T.sub.dwell1. The method further comprises reconfiguring the mass spectrometer or one or more components of the mass spectrometer to monitor a second ion acquisition and setting the first stage to transmit ions of the second ion acquisition at a time T, wherein T<T.sub.1+T.sub.dwell1. The method further comprises monitoring the second ion acquisition for a second dwell time starting at a time T.sub.2, wherein T.sub.2>T.sub.1+T.sub.dwell1 and determining the time T based on a known or calculated ion transit time through one or more regions or components of the mass spectrometer disposed downstream of the first stage.