Heterostructures that include a bilayer composed of epitaxial layers of vanadium dioxide having different rutile-to-monoclinic phase transition temperatures are provided. Also provided are electrical switches that incorporate the heterostructures. The bilayers are characterized in that they undergo a single-step, collective, metal-insulator transition at an electronic transition temperature. At temperatures below the electronic transition temperature, the layer of vanadium dioxide having the higher rutile-to-monoclinic phase transition temperature has an insulating monoclinic crystalline phase, which is converted to a metallic monoclinic crystalline phase at temperatures above the electronic transition temperature.

A security test logic system can include a non-transitory memory configured to store measurements from a measurement apparatus, the measurement outputs comprising indications of presence or absence of coincidences where particles are detected at more than one detector at substantially the same time, the detectors being at the end of different channels from a particle source and having substantially the same length. The system can include a processor configured to compute a test statistic from the stored measurements. The test statistic may express a Bell inequality, and the system can compare the test statistic with a threshold. The processor can be configured to generate and output a certificate certifying that the measurements are from a quantum system if the value of the computed test statistic passes the threshold.

Embodiments may relate to a package substrate that includes a signal line and a ground line. The package substrate may further include a switch communicatively coupled with the ground line. The switch may have an open position where the switch is communicatively decoupled with the signal line, and a closed position where the switch is communicatively coupled with the signal line. Other embodiments may be described or claimed.

Described herein are devices incorporating Casimir cavities, which modify the quantum vacuum mode distribution within the cavities. The Casimir cavities can drive charge carriers from or to an electronic device disposed adjacent to or contiguous with the Casimir cavity by modifying the quantum vacuum mode distribution incident on one side of the electronic device to be different from the quantum vacuum mode distribution incident on the other side of the electronic device. The electronic device can exhibit a structure that permits transport or capture of hot carriers in very short time intervals, such as in 1 picosecond or less.

A system and method for storing information in a quantum computer using a quantum storage ring. The method comprises cooling ions in the quantum storage ring to a low temperature; and binding the ions into a lattice structure, forming an ion Coulomb crystal.

A system, method, diagnostic and container delivery system for manipulating a target, by manipulating with the quantum coherence of the target. The method includes identifying intrinsic parameters of the target and determining target-tuned design factors based at least partially on the intrinsic parameters. Target-tuned electrons and fields are generated based in part on the target-tuned design factor. The target-tuned electrons and fields are defined by discrete quantized energy levels. The method may include preparing a container to carry the unquantized target-tuned electrons, the container being composed of superconductor quantum dots. The unquantized target-tuned electrons are transferred to the container to form target-tuned artificial atoms having quantized target-tuned electrons, which may be delivered to the target as a manipulating agent. Alternatively, the unquantized target-tuned electrons may be delivered directly to the subject.

A novel and useful system and method of generating quantum unitary noise using silicon based quantum dot arrays. Unitary noise is derived from a probability of detecting a particle within a quantum dot array structure comprising position based charge qubits with two time independent basis states |0> and |1>. A two level electron tunneling device such as an interface device, qubit or other quantum structure is used to generate quantum noise. The electron tunneling device includes a reservoir of particles, a quantum dot, and a barrier that is used to control tunneling between the reservoir and the quantum dot. A detector circuit connected to the device outputs a digital stream corresponding to the probability of a particle of being detected. Controlling the bias applied to the barrier controls the probability of detection. Thus, the probability density function (PDF) of the output unitary noise can be controlled to correspond to a desired probability. The unitary noise can be used in stochastic rounding by controlling the bias applied to the barrier in accordance with a remainder of numbers to be rounded.

A first aspect provides a topological quantum computing device comprising a network of semiconductor-superconductor nanowires, each nanowire comprising a length of semiconductor formed over a substrate and a coating of superconductor formed over at least part of the semiconductor; wherein at least some of the nanowires further comprise a coating of ferromagnetic insulator disposed over at least part of the semiconductor. A second aspect provides a method of fabricating a quantum or spintronic device comprising a heterostructure of semiconductor and ferromagnetic insulator, by: forming a portion of the semiconductor over a substrate in a first vacuum chamber, and growing a coating of the ferromagnetic insulator on the semiconductor by epitaxy in a second vacuum chamber connected to the first vacuum chamber by a vacuum tunnel, wherein the semiconductor comprises InAs and the ferromagnetic insulator comprises EuS.

Described herein are devices incorporating plasmon Casimir cavities, which modify the distribution of allowable plasmon modes within the cavities. The plasmon Casimir cavities can drive charge carriers from or to an electronic device adjoining the plasmon Casimir cavity by modifying the distribution of zero-point energy-driven plasmons on one side of the electronic device to be different from the distribution of zero-point energy-driven plasmons on the other side of the electronic device. The electronic device can exhibit a structure that permits transport or capture of carriers in very short time intervals, such as in 1 picosecond or less.

An insulation layer formation method comprises: a first step in which a surface treatment is applied to a base material to form thereon a high-resistance layer having high electric resistivity; a second step in which metal plating parts are formed on the base material that has undergone the first step in such a manner as to allow a high-resistance layer to be formed thereon; and a third process in which a high-resistance layer is formed on the base material that has undergone the second step.