Patent classifications
B24D11/00
CONFORMABLE ABRASIVE ARTICLE
The present disclosure provides abrasive articles that include an abrasive layer having a contact surface, a first layer coupled to the abrasive layer, and a second layer coupled to the first layer. The first layer is configured to provide contact pressure to the abrasive layer, such as through a higher hardness than the second layer. The second layer is configured to provide conformability to the abrasive layer, such as through a higher compressibility than the first layer. The resulting abrasive articles may exert a consistent contact pressure against a substrate with increased conformability around the substrate, reduced hysteresis, improved removal rate consistency, and/or improved lifetime over abrasive articles that do not use the multiple layer construction described above.
POLISHING PAD, METHOD FOR PREPARING THE SAME, AND CHEMICAL AND MECHANICAL POLISHING EQUIPMENT
A method for preparing a polishing pad includes: preparing a polishing pad transition structure formed with a plurality of grooves, openings of the plurality of grooves being all located on a same side surface of the polishing pad transition structure; filling the plurality of grooves of the polishing pad transition structure with inorganic nanoparticles; pouring a mixture of a liquid polymer and a curing agent on the polishing pad transition structure, and evacuating air in the liquid polymer and the plurality of grooves; and placing the polishing pad transition structure in an environment at a temperature higher than or equal to a first temperature threshold, and the cured liquid polymer and the polishing pad transition structure constituting the polishing pad.
POLISHING PAD, PROCESS FOR PREPARING THE SAME, AND PROCESS FOR PREPARING A SEMICONDUCTOR DEVICE USING THE SAME
The polishing pad according to an embodiment adjusts the content of elements present in the polishing layer, thereby controlling the bonding strength between the polishing pad and the polishing particles and enhancing the bonding strength between the polishing particles and the semiconductor substrate (or wafer), resulting in an increase in the polishing rate. It is possible to enhance not only the mechanical properties of the polishing pad such as hardness, tensile strength, elongation, and modulus, but also the polishing rate for both a tungsten layer or an oxide layer. Accordingly, it is possible to efficiently fabricate a semiconductor device of excellent quality using the polishing pad.
POLISHING PAD WITH ADJUSTED CROSSLINKING DEGREE AND PROCESS FOR PREPARING THE SAME
The polishing pad according to an embodiment comprises a multifunctional low-molecular-weight compound as one of the polymerization units of the polyurethane-based resin that constitutes the polishing layer, thereby reducing the unreacted diisocyanate monomer in the production process to enhance the processability and quality and to increase the crosslinking density. Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.
POLISHING PAD, PROCESS FOR PREPARING THE SAME, AND PROCESS FOR PREPARING A SEMICONDUCTOR DEVICE USING THE SAME
Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.
POLISHING PAD, PROCESS FOR PREPARING THE SAME, AND PROCESS FOR PREPARING A SEMICONDUCTOR DEVICE USING THE SAME
Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.
METHOD OF MAKING A COATED ABRASIVE ARTICLE AND COATED ABRASIVE ARTICLE
A method of making a coated abrasive article includes disposing a precursor make layer on a major surface of the backing, optionally partially curing the precursor make layer to provide a partially cured precursor make layer, disposing abrasive particles; partially embedding abrasive particles in the optionally partially cured precursor make layer; and further curing the optionally partially cured precursor make layer to form a make layer. The precursor make layer comprises components comprising: a) 50 to 97.99 percent by weight of phenol-formaldehyde resin; b) 1 to 49 percent by weight of resorcinol-formaldehyde resin; c) 1 to 49 percent by weight of at least one compound having at least one free-radically polymerizable group; and d) 0.01 to 1 percent by weight of a free-radical initiator. A size layer and/or supersize layer may be disposed over the make layer and abrasive articles. Coated abrasive articles made by the method are also disclosed.
UV-CURABLE RESINS FOR CHEMICAL MECHANICAL POLISHING PADS
The invention provides a composition for preparing a chemical-mechanical polishing pad via photopolymerization, comprising one or more acrylate urethane oligomers, one or more acrylate monomers and at least one photo-polymerization initiator. The invention also provides a method of forming a chemical-mechanical polishing pad comprising; preparing composition comprising one or more acrylate urethane oligomers, one or more acrylate monomers and at least one photo-polymerization initiator. The method further comprising exposing at least a layer of the composition to ultraviolet light, thereby initiating a polymerization reaction and thus forming at least a layer of solidified pad material.
ABRASIVE ARTICLE WITH ANIONIC WATER SOLUBILIZING MATERIAL AND METHOD OF MAKING
An abrasive article includes backing material, binder comprising an anionic water solubilizing material provided on at least a portion of the backing material and abrasive particles provided on at least a portion of the backing material. A method of making such an abrasive article comprises the steps of providing a backing material, applying a first binder containing an anionic water solubilizing material to the backing material, and applying abrasive particles to the backing material.
ABRASIVE ARTICLE WITH ANIONIC WATER SOLUBILIZING MATERIAL AND METHOD OF MAKING
An abrasive article includes backing material, binder comprising an anionic water solubilizing material provided on at least a portion of the backing material and abrasive particles provided on at least a portion of the backing material. A method of making such an abrasive article comprises the steps of providing a backing material, applying a first binder containing an anionic water solubilizing material to the backing material, and applying abrasive particles to the backing material.