A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

The present invention provides a polishing pad whose crosslinking density is adjusted to enhance the performance of the CMP process such as polishing rate and cut pad rate. In addition, in the process for preparing a polishing pad according to the embodiment, it is possible to implement such a crosslinking density by a simple method of controlling the preheating temperature of the mold for curing. Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.

The present invention provides a polishing pad whose crosslinking density is adjusted to enhance the performance of the CMP process such as polishing rate and cut pad rate. In addition, in the process for preparing a polishing pad according to the embodiment, it is possible to implement such a crosslinking density by a simple method of controlling the preheating temperature of the mold for curing. Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.

A phenolic resin composition is described comprising at least 50 wt.-% of phenolic resin; first polymerized units comprising a cationic group; and second polymerized units comprising an anionic group. The cationic groups are ionically bonded to the anionic groups. The ionic bonding of the cationic group and anionic group of the polymerized units can provide certain complex viscosity and/or tan delta properties. In some embodiments, the phenolic resin composition has a complex viscosity at 65 C of at least 50 Pascal(seconds) and/or has a tan delta at 65 C ranging from 0.5 to 2.5. Abrasive articles and methods of making an abrasive article are also described.

A phenolic resin composition is described comprising at least 50 wt.-% of phenolic resin; first polymerized units comprising a cationic group; and second polymerized units comprising an anionic group. The cationic groups are ionically bonded to the anionic groups. The ionic bonding of the cationic group and anionic group of the polymerized units can provide certain complex viscosity and/or tan delta properties. In some embodiments, the phenolic resin composition has a complex viscosity at 65 C of at least 50 Pascal(seconds) and/or has a tan delta at 65 C ranging from 0.5 to 2.5. Abrasive articles and methods of making an abrasive article are also described.

A superabrasive compact and a method of making the superabrasive compact are disclosed. A superabrasive compact may comprise a diamond table and a substrate. The diamond table may be attached to the substrate. The diamond table may include bonded diamond grains defining interstitial channels. The interstitial channels may be filled with non-catalytic binder materials in some regions. The interstitial channels in some other regions may be filled with a catalytic materials from the substrate.

A sander for use with a vacuum extraction system is provided. The sander comprises a body, a releasable retention mechanism on an upper surface adjacent each end of the body, a platen, the platen adjacent to and attached to a lower surface of the body and having a pattern of grooves, an at least one vacuum port extending through the body and platen and positioned such that the grooves in the platen are substantially directed to the at least one vacuum port, wherein the improvement comprises a perforated sandpaper sheet, the perforated sandpaper sheet comprising: an upper sandpaper layer; a lower plastic polymer foam layer; and a plurality of apertures in a plurality of series; the plurality of series of apertures in a pattern configured to align with the pattern of grooves in the platen of the sander, the plurality of apertures occupying about 5 percent of an upper surface area of the sandpaper sheet.

A sander for use with a vacuum extraction system is provided. The sander comprises a body, a releasable retention mechanism on an upper surface adjacent each end of the body, a platen, the platen adjacent to and attached to a lower surface of the body and having a pattern of grooves, an at least one vacuum port extending through the body and platen and positioned such that the grooves in the platen are substantially directed to the at least one vacuum port, wherein the improvement comprises a perforated sandpaper sheet, the perforated sandpaper sheet comprising: an upper sandpaper layer; a lower plastic polymer foam layer; and a plurality of apertures in a plurality of series; the plurality of series of apertures in a pattern configured to align with the pattern of grooves in the platen of the sander, the plurality of apertures occupying about 5 percent of an upper surface area of the sandpaper sheet.

An abrasive article having a plurality of apertures arranged in a non-uniform distribution pattern, wherein the pattern is spiral or phyllotactic, and in particular those patterns described by the Vogel equation. Also, provided is a back-up pad having a spiral or phyllotactic patterns of air flow paths, such as in the form of open channels. The back-up pad can be specifically adapted to correspond with an abrasive article having a non-uniform distribution pattern. Alternatively, the back-up pad can be used in conjunction with conventional perforated coated abrasives. The abrasive articles having a non-uniform distribution pattern of apertures and the back-up pads can be used together as an abrasive system.