The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer on the bottom electrode having a width that is same as a width of the top portion of the bottom electrode; a capping layer over the bottom electrode; a spacer surrounding the capping layer; and, a top electrode on the capping layer having a smaller width than the resistive material layer. The RRAM cell further includes a conductive material connecting the top electrode of the RRAM structure to a metal layer.

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

Systems and methods for improving performance of a non-volatile memory that utilizes a Vacancy Modulated Conductive Oxide (VMCO) structure are described. The VMCO structure may include a layer of amorphous silicon (e.g., a Si barrier layer) and a layer titanium oxide (e.g., a TiO2 switching layer). In some cases, the VMCO structure or VMCO stack may use bulk switching or switching O-ion movements across an area of the VMCO structure, as opposed to switching locally in a constriction of vacancy formed filamentary path. A VMCO structure may be partially or fully embedded within a word line layer of a memory array.

Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to one or more barrier layers having various characteristics formed under and/or over and/or around correlated electron material.

A thermally optimized phase change memory cell includes a phase change material element disposed between first and second electrodes. The second electrode includes a thermally insulating region having a first thermal resistivity over the first electrode and a metallic contact region interposed between the phase change material element and the thermally insulating region, where the metallic contact layer has a second thermal resistivity lower than the first thermal resistivity.

A memristive radio frequency (RF) switch circuit comprises a first metal electrode and a second metal electrode arranged on an insulating substrate and separated by an air gap, wherein the air gap is fifty nanometers (50 nm) or less, and wherein applying and removing an enabling voltage to the memristive RF switch enables the memristive RF switch to pass RF signals between the first electrode and the second electrode even when the enabling voltage is removed from the memristive switch, and wherein applying and removing a disabling voltage to the memristive switch disables the memristive switch.

An electrode includes an electrode layer including an electrode active material or a raw material of an electrode active material and a bisphenol-based resin, and a current collector supporting the electrode layer. The bisphenol-based resin is obtained by a reaction of (a) a bisphenol-based compound, (b) at least one selected from the group consisting of aminobenzenesulfonic acids and aminobenzenesulfonic acid derivatives, and (c) at least one selected from the group consisting of formaldehyde and formaldehyde derivatives, wherein a content of a structural unit that is obtained by the reaction of the component (a), the component (b) and the component (c) and also has a benzoxazine ring is 15 mass % or less. A production method for the electrode is also disclosed.

The present disclosure provides resistive random access memory (RRAM) structures and methods of making the same. The RRAM structures include a bottom electrode having protruded step portion that allows formation of a self-aligned conductive path with a top electrode during operation. The protruded step portion may have an inclination angle of about 30 degrees to 150 degrees. Multiple RRAM structures may be formed by etching through a RRAM stack.

A metal-insulator-metal (MIM) capacitor structure of an RRAM device includes a first electrode and a second electrode with an insulating layer interposing the first and second electrodes. The conductive filament providing for a switching function of the RRAM device may be formed within the insulating layer. Further, a nitrogen-rich metal layer interposes the second electrode and the insulating layer. The nitrogen-rich metal layer includes a greater nitrogen concentration than that of the adjacent second electrode.

A semiconductor device may include: a substrate; a first mold layer formed over the substrate and comprising a plurality of bottom conductive patterns connected to the substrate; a second mold layer formed over the first mold layer, and defining a plurality of hole openings, wherein each of the hole openings overlaps each of the bottom conductive patterns; a third mold layer formed over the second mold layer, and defining a plurality of line openings, wherein each of the line openings overlaps two or more hole openings of the hole openings; and a conductive material layer buried in the hole openings and the line openings.