A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.

[Problem] To provide a heat exchange device with which efficient electric power generation can be performed while transfer of a heat amount is maintained. [Solution] A heat exchange device comprising a heat exchange section 1 and a magnetic body 2. The heat exchange section 1 includes a first heat transmission interface 3 in contact with a heat source, and a second heat transmission interface 4 in contact with a heat bath having a temperature different from that of the heat source. The magnetic body 2 is interposed between the first heat transmission interface 3 and the second heat transmission interface 4 of the heat exchange section 1, and includes a magnetization component in a direction intersecting a heat flux produced between the first heat transmission interface 3 and the second heat transmission interface 4.

Electrical devices with an integral thermoelectric generator comprising a spin-Seebeck insulator and a spin orbit coupling material, and associated methods of fabrication. A spin-Seebeck thermoelectric material stack may be integrated into macroscale power cabling as well as nanoscale device structures. The resulting structures are to leverage the spin-Seebeck effect (SSE), in which magnons may transport heat from a source (an active device or passive interconnect) and through the spin-Seebeck insulator, which develops a resulting spin voltage. The SOC material is to further convert the spin voltage into an electric voltage to complete the thermoelectric generation process. The resulting electric voltage may then be coupled into an electric circuit.

A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.

A charged particle beam apparatus has a chamber configured to accommodate a sample with. An inside of the chamber is decompressed. A tube having an opening is disposed in the chamber, and introduces a mixed gas having a plurality of types of gases, in a direction towards the sample. A first beam generator emits a charged particle beam toward at least one of a region between an opening of the tube and the sample, or a region of the sample against which the mixed gas collides. A mixed gas generator provides the mixed gas to the tube. The opening of the tube has an elongated shape in a cross section in a direction substantially perpendicular to a flow direction of the mixed gas.

Provided is a heat flow switching element which has a larger change in a thermal conductivity and has excellent thermal responsiveness. The heat flow switching element includes an N-type semiconductor layer, an insulator layer laminated on the N-type semiconductor layer, a P-type semiconductor layer laminated on the insulator layer, an N-side electrode connected to the N-type semiconductor layer, and a P-side electrode connected to the P-type semiconductor layer. In particular, the insulator layer is formed of a dielectric. Also, a plurality of N-type semiconductor layers and P-type semiconductor layers are laminated alternately with the insulator layer interposed therebetween.

The disclosed subject matter relates to techniques, laminates and devices used to fabricate thin dielectric or semiconductor membranes including a handling substrate including a photoresist material on a first surface thereof, a semiconductor wafer having a circuit pattern on a first surface and a second surface to be processed and a temporary adhesive layer temporarily bonding the first surface of the semiconductor wafer to the first surface of the handling substrate including the photoresist material.

Thermoelectric devices and methods of using thermoelectric devices. A thermoelectric device includes a thermoelectric element comprised of a material having a non-zero Berry curvature. The device may operate as a Nernst generator that generates electricity in response to application of a temperature gradient to the thermoelectric element, or as an Ettingshausen cooler that pumps heat into or out of an object to be heated or cooled in response to application of a current to the thermoelectric element. In either application, the non-zero Berry curvature of the material allows the device to operate without an externally applied magnetic field.

Methods and systems for sending multicast messages are disclosed. A multicast message is received to be transmitted to a plurality of access terminals at a radio access network (RAN), the received multicast message having a first format. The first format may correspond to a conventional multicast message format. The RAN determines whether the received multicast message requires special handling. If the RAN determines the received multicast message requires special handling, the radio access network converts the received multicast message from the first format into a second format. The RAN transmits the converted multicast message with the second format (e.g., a data over signaling (DOS) message) on a control channel to at least one of the plurality of access terminals. The access terminals receiving the converted multicast message interpret the message as a multicast message.

Thermoelectric devices and methods of using thermoelectric devices. A thermoelectric device includes a thermoelectric element comprised of a material having a non-zero Berry curvature. The device may operate as a Nernst generator that generates electricity in response to application of a temperature gradient to the thermoelectric element, or as an Ettingshausen cooler that pumps heat into or out of an object to be heated or cooled in response to application of a current to the thermoelectric element. In either application, the non-zero Berry curvature of the material allows the device to operate without an externally applied magnetic field.