A thermal detector including a three-dimensional structure adapted for detecting electromagnetic radiation, suspended above and thermally insulated from a substrate, including a membrane and an absorber, the latter being formed on the basis of a shape-memory alloy and being adapted to have a flat detection configuration when its temperature is less than or equal to T.sub.1 and a cooling curve configuration when its temperature is above an austenite start temperature A.sub.s.

A thermoelectric module includes a plurality of thermoelectric components, a first electrode and a second electrode. The thermoelectric components have the same type of semiconductor material. The first electrode includes a first parallel connection part and a first serial connection part. The plurality of thermoelectric components is electrically connected to the first parallel connection part and each of the plurality of thermoelectric components is separated from one another. The first serial connection part is configured for being electrically connected to other electrical components. The plurality of thermoelectric components is electrically connected to the second electrode and located between the first parallel connection part and the second electrode.

An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.

The present invention provides a conversion material including a first phase providing a matrix and a second phase comprising a nanoscale or microscale material providing electron mobility. The conversion material converts heat from a single macroscopic reservoir into voltage.

Thermoelectric devices and methods of using thermoelectric devices. A thermoelectric device includes a thermoelectric element comprised of a material having a non-zero Berry curvature. The device may operate as a Nernst generator that generates electricity in response to application of a temperature gradient to the thermoelectric element, or as an Ettingshausen cooler that pumps heat into or out of an object to be heated or cooled in response to application of a current to the thermoelectric element. In either application, the non-zero Berry curvature of the material allows the device to operate without an externally applied magnetic field.

[Problem] To provide a heat exchange device with which efficient electric power generation can be performed while transfer of a heat amount is maintained. [Solution] A heat exchange device comprising a heat exchange section 1 and a magnetic body 2. The heat exchange section 1 includes a first heat transmission interface 3 in contact with a heat source, and a second heat transmission interface 4 in contact with a heat bath having a temperature different from that of the heat source. The magnetic body 2 is interposed between the first heat transmission interface 3 and the second heat transmission interface 4 of the heat exchange section 1, and includes a magnetization component in a direction intersecting a heat flux produced between the first heat transmission interface 3 and the second heat transmission interface 4.

System for quantum energy storage can include a quantum information engine including topological insulator having at least one edge. A coherence capacitor can include nuclei of atoms within the topological insulator, and each nucleus can have a spin direction. An energy source can be electrically connected to the topological insulator and configured to supply a current along the at least one edge of the topological insulator. The current can interact with at least one nucleus of the nuclei to flip a spin direction of the at least one nucleus. Methods for quantum energy storage, systems and methods for storing and using quantum energy, quantum information engines, and quantum heat engines are also disclosed.

In manufacturing a crystalline silicon-based solar cell, a first intrinsic thin-film is formed on a conductive single-crystalline silicon substrate, and then a hydrogen plasma etching is performed. A second intrinsic thin-film is formed on the first intrinsic thin-film after the hydrogen plasma etching, and a conductive silicon-based thin-film is formed on the second intrinsic thin-film. The second intrinsic thin-film is formed by plasma-enhanced CVD with a silicon-containing gas and hydrogen being introduced into a CVD chamber. The amount of the hydrogen introduced into the CVD chamber during formation of the second intrinsic thin-film is 50 to 500 times an introduction amount of the silicon-containing gas.

A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.

A thermoelectric conversion structure according to an exemplary aspect of the invention includes a thermoelectric conversion unit structure including a magnetic fine particle including a magnetic material with the spin Seebeck effect arising and an electromotive body with which to cover the magnetic fine particle, wherein a plurality of the thermoelectric conversion unit structures form an aggregate with the electromotive body connecting to each other.