To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

The present disclosure relates to oxide semiconductor transistors, methods of manufacturing the same, and/or memory devices including the oxide semiconductor transistors. The oxide semiconductor transistor includes first and second compound layers provided on a substrate, a channel layer in contact with the first and second compound layers, a first electrode facing a portion of the channel layer, a second electrode facing the first compound layer with the channel layer therebetween, and a third electrode facing the second compound layer with the channel layer therebetween. An oxygen concentration of a region of the channel layer facing the first electrode is greater than that of the remaining regions of the channel layer. A buffer layer may further be provided between the channel layer and the second and third electrodes. The first and second compound layers may include oxygen and a metal.

An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.

A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Disclosed examples include microelectronic devices, e.g. Integrated circuits. One example includes a microelectronic device including a nanosheet lateral drain extended metal oxide semiconductor (LDMOS) transistor with source and drain regions having a first conductivity type extending into a semiconductor substrate having an opposite second conductivity type. A superlattice of alternating layers of nanosheets of a channel region and layers of gate conductor are separated by a gate dielectric, the superlattice extending between the source region and the drain region. A drain drift region of the first conductivity type extends under the drain region and a body region of the second type extends around the source region.

A microelectronic device, e.g. an integrated circuit, includes first and second doped semiconductor regions over a semiconductor substrate. A semiconductor nanosheet layer is connected between the first and second semiconductor regions and has a bandgap greater than 1.5 eV. In some examples such a device is implemented as an LDMOS transistor. A method of forming the device includes forming a trench in a semiconductor substrate having a first conductivity type. A semiconductor nanosheet stack is formed within the trench, the stack including a semiconductor nanosheet layer and a sacrificial layer. Source and drain regions having an opposite second conductivity type are formed extending into the semiconductor nanosheet stack. The sacrificial layer between the source region and the drain region is removed, and the semiconductor nanosheet layer is annealed. A gate dielectric layer is formed on the semiconductor nanosheet layer, and a gate conductor is formed on the gate dielectric layer.

A reduced interfacial defect density and low contact resistance can be provided for a thin film transistor by using a compositionally-modulated capping layer. A stack including a gate electrode, a gate dielectric layer, an active layer including a semiconducting metal oxide material, an in-process capping layer including a dielectric metal oxide material can be formed over a substrate. A dielectric material layer can be formed, and a source cavity and a drain cavity can be formed through the dielectric material layer. Exposed portions of the in-process capping layer can be converted into conductive material portions to provide a compositionally-modulated capping layer, which includes a first conductive capping material portion, the second conductive capping material portion, and a dielectric capping material portion.

The present disclosure provides a displaying backplane and a displaying device, and relates to the technical field of displaying. The displaying backplane includes: a substrate base plate; a first active layer and a second active layer that are provided on the substrate base plate, wherein the material of the first active layer and the second active layer is an oxide semiconductor, the first active layer has a first channel region and first no-channel regions, and the second active layer has a second channel region and second no-channel regions; a first grid insulating layer covering the first active layer and the second active layer; and a first grid and a second grid that are provided on the first grid insulating layer; wherein the oxygen-vacancy concentration of the first channel region is greater than the oxygen-vacancy concentrations of the first no-channel regions, the second no-channel regions and the second channel region.