A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

A transparent display device comprises: a first base comprising a light-transmissive material; a plurality of light sources disposed on the first base; a display PCB positioned at the end of the first base; a transparent electrode connecting the light sources and the display PCB to each other; a second base covering the light sources; a photoactive layer formed in either the first base or the second base to convert sunlight into electrical energy; and a third base covering the photoactive layer. The transparent display device can self-produce and self-supply power and thus is easy to install.

Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.

A method for manufacturing a quantum dot thin film includes applying a tensile force to a substrate to elongate the substrate, coating a quantum dot particle on the substrate to form a quantum dot thin film, replacing a ligand of the quantum dot particle, and removing the tensile force from the substrate. The method may reduce a crack in a quantum dot thin film.

The present technology relates to an optical filter, a solid state imaging device, and an electronic apparatus that make it possible to suppress the occurrence of color mixing due to wavelength components on the short wavelength side relative to the desired transmission component.

The optical filter includes: a metal thin-film filter in which a plurality of openings are periodically arranged; a first dielectric layer coating a surface of the metal thin-film filter and formed so as to coat or fill an interior of the opening of the metal thin-film filter; and a second dielectric layer having a refractive index lower than a refractive index of the first dielectric layer and formed at least on an incidence surface side of the metal thin-film filter. An opening diameter of the metal thin-film filter is smaller than a wavelength in the second dielectric layer of an electromagnetic wave to be transmitted, and a thickness of the first dielectric layer is substantially equal to or thinner than the wavelength in the second dielectric layer of the electromagnetic wave. The present technology can be applied to a hole array filter.

A semiconductor structure includes an optoelectronic device located in one region of a substrate. A dielectric material is located adjacent and atop the optoelectronic device. A top contact is located within a region of the dielectric material and contacting a topmost surface of the optoelectronic device. A bottom metal contact is located beneath the optoelectronic device and lining a pair of openings located with other regions of the dielectric material, wherein a portion of the bottom metal contact contacts an entire bottommost surface of the optoelectronic device.

A system to dynamically configure a conductive pathway and a method of forming a dynamically configurable conductive pathway are described. The system includes a substrate to mechanically support a circuit, and a photosensitive layer disposed on at least a portion of at least one side of the substrate. The system also includes a light source to controllably define the conductive pathway in the photosensitive layer based on photoexcitation of an area of the photosensitive layer corresponding with the conductive pathway, a change in the area photoexcited by the light source facilitating a change in the conductive pathway.

The present disclosure relates to a solid-state imaging element configured to inhibit an adverse effect, which is attributable to a light shielding film formed for disposing an OPB region, on the formation of a constituent other than the light shielding film of the solid-state imaging element, and an electronic device. According to a first aspect of the present disclosure, there is provided a solid-state imaging element, including: an effective pixel region in which a large number of pixels are vertically and horizontally arranged; and an OPB region formed by coating pixels around the effective pixel region with a light shielding film. Corners on at least one of an outer circumferential side and an inner circumferential side of the OPB region are formed into an arc shape. The present disclosure can be applied to, for example, a back-surface irradiation type CMOS image sensor.

A photovoltaic assembly for converting solar radiation to electrical energy is described. The photovoltaic assembly includes a photovoltaic module and an electronic component housing. The photovoltaic module has a frame, a laminate, a plurality of solar cells and a backsheet. The electronic component housing has an upper section to couple to the backsheet, a middle section and a lower section for enclosing electronic components. The electronic components can include a microinverter or electronics for a junction box. The middle section can have a heat sink in thermal communication with the electronic component and an opening. The opening can be a plurality of openings having a plurality of air fins distributed therein, or can be a diagonal or curved structure. The opening can permit fluid communication between the heat sink and an ambient environment. The upper section and/or the aforementioned air fins can also be coupled to the backsheet via a heat conductive adhesive.

A terahertz modulator based on low-dimension electron plasma wave, a manufacturing method thereof, and a high speed modulation method are provided. The terahertz modulator includes a plasmon and a cavity. The present disclosure discloses the resonance absorption mechanism caused by collective oscillation of electrons (plasma wave, namely, the plasmon). In order to enhance the coupling strength between the terahertz wave and the plasmon, a GaN/AlGaN high electron mobility transistor structure having a grating gate is integrated in a terahertz Fabry-Prot cavity, and a plasmon polariton is formed arising from strong coupling of the plasmon and a cavity mode.