Embodiments described in this application relate generally to a system, an apparatus and/or methods for manufacturing electrodes by infusion electrolyte into compacted electrode materials. In some embodiments, a working electrode materials can be produced using an infusion mixing and manufacturing process. In some embodiments, a single-sided finished electrode can be produced directly from a dry powder mixture using an infusion mixing and manufacturing process. In some embodiments, a double-sided finished electrode can be produced directly from a dry powder mixture using an infusion mixing and manufacturing process. The electrodes produced by an infusion mixing and manufacturing process generally perform better than those produced by non-infusion processes.

The present disclosure discloses a cold isostatic pressing apparatus. The apparatus comprises a container having a cavity to hold a pressure medium. The cavity comprises one or more openings. The openings comprise a first opening and a second opening. The cavity is configured to receive at least one sample through the first opening. The apparatus further comprises a closure member configured to seal the first opening and for the introduction and removal of the sample(s). The apparatus further comprises at least one high pressure pump in fluid communication with the container through the second opening. The high-pressure pump is configured to deliver the pressure medium at high pressure to isostatically compress and compact the sample.

Prosthetic knee implant or implant component is made with a magnesium oxide stabilized transformationally toughened zirconia.

An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn), doping metal element (M) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In.sub.2Ce.sub.xZnO.sub.4+2x, wherein x=0.52.

An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn), doping metal element (M) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In.sub.2Ce.sub.xZnO.sub.4+2x, wherein x=0.52.

Embodiments described in this application relate generally to a system, an apparatus and/or methods for manufacturing electrodes by infusion electrolyte into compacted electrode materials. In some embodiments, a working electrode materials can be produced using an infusion mixing and manufacturing process. In some embodiments, a single-sided finished electrode can be produced directly from a dry powder mixture using an infusion mixing and manufacturing process. In some embodiments, a double-sided finished electrode can be produced directly from a dry powder mixture using an infusion mixing and manufacturing process. The electrodes produced by an infusion mixing and manufacturing process generally perform better than those produced by non-infusion processes.

An apparatus including a first dispensing device configured to supply a first material to a conveyor belt of the main conveyor device in response to control by the computer processor, and a second dispensing device configured to supply a second material on top of the first material, while the first material is on the conveyor belt to form a combination comprised of at least the first and second materials, in response to control by the computer processor. The combination may be compressed by a first compression device in response to control by the computer processor. The compressed combination may be stirred by a first stirring device in response to control by the computer processor to form a first modified combination. The first modified combination may be compressed by a second compression device in response to control by the computer processor to form a compressed first modified combination.

To provide a faraday rotator using a TGG ceramic sintered compact and a light isolator using the faraday rotator such that the influence of scattered light can be relatively reduced and overall characteristics degradation for the entire light isolator is minimized so that a high extinction ratio of at least 38 dB or greater is achieved. [Solution] The faraday rotator according to the present invention uses a TGG ceramic sintered compact having an average particle diameter of 0.2 to 5.0 m, and has a transmission beam diameter of 0.3 mm or more, the TGG ceramic sintered compact being preferably annealed.

Fired magnesium oxide stabilized transformation toughened zirconia ceramic can be for or of an implant or implant component of a one-piece unicompartmental knee spacer device; a multi-piece unicompartmental joint aligning device; a temporal mandibular joint cap implant; a vertebra cap; an ankle joint ensemble or component; a bridge, a tooth or teeth; a patellofemoral joint implant; a tibial tray for a knee joint replacement implant; an intermediary articulation plate for a tibial tray and liner for a knee joint replacement implant; or the intermediary articulation plate assembled in combination with the tibial tray.

The invention relates to a method for the production of a shaped body comprising at least the method steps of producing a blank having an open porosity by pressing and treating pourable material in a first heat treatment step comprising or consisting of a metal oxide, infiltrating the blank with an infiltration fluid containing a precursor of the metal oxide, precipitating hydroxide of the metal from the infiltration fluid by treating the blank with a basic solution, forming the metal oxide from the hydroxide by treating the blank in a second heat treatment step, wherein the blank is processed before or after the second heat treatment step to achieve a shape that corresponds to the shaped body.