The feeding unit includes a base plate, and a cross member. The base plate receives the gemstones, affixed to the gemstone holders. The cross member is an automated moving member, configured such that a home position of the cross member coincides with a pre-defined point on the base plate. Accordingly, the gemstone, along with its gemstone holder, when received at the base plate is picked up by the cross member, specifically, by the first gripping member and the second gripping member, by a detachable contact established between the gemstone holder and the cross member, such that the cross member transfers the gemstone holder positioned on the base plate to a pre-defined position on the feeding unit.

The feeding unit includes a base plate, and a cross member. The base plate receives the gemstones, affixed to the gemstone holders. The cross member is an automated moving member, configured such that a home position of the cross member coincides with a pre-defined point on the base plate. Accordingly, the gemstone, along with its gemstone holder, when received at the base plate is picked up by the cross member, specifically, by the first gripping member and the second gripping member, by a detachable contact established between the gemstone holder and the cross member, such that the cross member transfers the gemstone holder positioned on the base plate to a pre-defined position on the feeding unit.

In a semiconductor chip manufacturing device which produces a plurality of LD chips by dividing a semiconductor wafer, being placed in a casing in which a fluid medium is filled, on which a block line is formed in advance and also on which a scribed line is inscribed so that a microcrack is formed along the scribed line, the semiconductor chip manufacturing device comprises a reception stage for supporting the semiconductor wafer, and a blade cutting-edge for pressurizing the semiconductor wafer along its crack portion made of the block line or the scribed line, so that the semiconductor wafer is divided into a plurality of LD chips by pressurizing it by means of the blade cutting-edge along the crack portion in the fluid medium.

Provided is an indium phosphide substrate having good linearity accuracy of a ridge line where the main surface is in contact with the orientation flat, and a method for producing the indium phosphide substrate. An indium phosphide substrate having a main surface and an orientation flat, wherein a maximum value of deviation is less than 1/1000 of a length of a ridge line where the main surface is in contact with the orientation flat, when a plurality of measurement points are set at intervals of 2 mm from a start point to an end point at the ridge line, except for a length portion of 3 mm inward from both ends of the ridge line, and based on a reference line which is a straight line connecting the start point and the end point, a distance of each measurement point from the reference line is defined as the deviation of each measurement point.

Provided is an indium phosphide substrate having good linearity accuracy of a ridge line where the main surface is in contact with the orientation flat, and a method for producing the indium phosphide substrate. An indium phosphide substrate having a main surface and an orientation flat, wherein a maximum value of deviation is less than 1/1000 of a length of a ridge line where the main surface is in contact with the orientation flat, when a plurality of measurement points are set at intervals of 2 mm from a start point to an end point at the ridge line, except for a length portion of 3 mm inward from both ends of the ridge line, and based on a reference line which is a straight line connecting the start point and the end point, a distance of each measurement point from the reference line is defined as the deviation of each measurement point.

An edge trimming method for cutting an outer peripheral portion of a workpiece having a chamfered part on the outer peripheral portion. The method includes a cut in step of relatively moving a rotating cutting blade and a chuck table to cause the blade to cut into the outer peripheral portion, a cutting step of, after the cut in step, rotating the chuck table and causing the outer peripheral portion to be cut, to form an annular step, and a moving step of, after the cutting step, moving the blade in a direction of its axis of rotation to form another annular step adjacent to the first-mentioned annular step. The cut in, cutting, and moving steps are repeated in this order, and a stepped oblique region is formed on the outer peripheral portion, with a thickness increasing from an outermost peripheral edge toward an inner side of the workpiece.

A peeling apparatus includes: an ingot holding unit holding an ingot with an ingot portion corresponding to a wafer being faced up; an ultrasonic wave oscillating unit which has an end face facing the ingot portion corresponding to the wafer and oscillates an ultrasonic wave; a water supplying unit supplying water to an area between the ingot portion corresponding to the wafer and the end face of the ultrasonic wave oscillating unit; and a peeling unit that holds the ingot portion corresponding to the wafer with suction and peels off the wafer from the ingot.

A method of fabricating a semiconductor device can include providing an integrated circuit electrically coupled to a metallization pad on a semiconductor wafer, the integrated circuit and the metallization pad covered by a cap structure. A channel can be cut in a portion of the cap structure that covers the metallization pad using a cutting tool having a tip surface and a beveled side surface to expose an upper surface of the metallization pad in the channel extending in a first direction and a conductive material can be deposited in the channel to ohmically contact the upper surface of the metallization pad in the channel.

A wafer producing apparatus detects a facet area from an upper surface of an SiC ingot, sets X and Y coordinates of plural points lying on a boundary between the facet area and a nonfacet area in an XY plane, and sets a focal point of a laser beam having a transmission wavelength to SiC inside the SiC ingot at a predetermined depth from the upper surface of the SiC ingot. The predetermined depth corresponds to the thickness of the SiC wafer to be produced. A control unit increases the energy of the laser beam and raises a position of the focal point in applying the laser beam to the facet area as compared with the energy of the laser beam and a position of the focal point in applying the laser beam to the nonfacet area, according to the X and Y coordinates.

A slurry sprayer for supplying a slurry to a wire saw during ingot slicing is disclosed. The slurry sprayer includes a main body and a cover plate that is detachable from the main body for cleaning the slurry sprayer. In some embodiments, the slurry sprayer includes an adjustable support that allows the incline angle of the sprayer to be adjusted and allows the vertical and horizontal position of the slurry sprayer to be adjusted. In some embodiments, the slurry sprayer includes two feed openings to allow the slurry pressure to be more equalized across the slurry sprayer.