Set gemstones, gemstone settings, and methods of setting gemstones including a cut gemstone having a girdle a plurality of horizontal grooves each having an upper edge and a lower edge, wherein the upper edges of the plurality of horizontal grooves are located within the girdle, abut a lower edge of the girdle, or are within 1 millimeter beneath the lower edge of the girdle, and a cylindrical barrel having a central aperture, an open top, a rim at the top forming an upper edge of the barrel, and a plurality of flanges projecting into the central aperture of the barrel located directly beneath the rim, wherein the flanges project into the grooves to maintain the gemstone within the barrel.

A wafer is processed by irradiating a region to be divided with a pulse laser beam with a wavelength having absorbability to generate a thermal stress wave and propagate the wave to the inside of the region to be divided. A crushed layer is formed by executing irradiation, with a pulse laser beam with a wavelength having transmissibility with respect to the wafer, matching with a time when the thermal stress wave is generated and reaching a depth position at which a point of origin of dividing is to be generated at a sonic speed according to the material of the wafer. Absorption of the pulse laser beam with the wavelength having the transmissibility in a region in which the band gap is narrowed due to a tensile stress of the thermal stress wave forms a crushed layer that serves as the point of origin of dividing.

Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.

In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

In a method, substrate elements are provided wherein each substrate element has a first side and a second side meeting at a corner point. The substrate elements are picked and then placed on a support device in alignment. A cutting operation is then performed where each of the substrates elements are cut along a cut line having a common first direction which intersects the first and second sides of each of the substrate elements in order to create a third side on each substrate element. The third side of each of the substrate elements meets the first and the second sides at corresponding corner points.

In a method, substrate elements are provided wherein each substrate element has a first side and a second side meeting at a corner point. The substrate elements are picked and then placed on a support device in alignment. A cutting operation is then performed where each of the substrates elements are cut along a cut line having a common first direction which intersects the first and second sides of each of the substrate elements in order to create a third side on each substrate element. The third side of each of the substrate elements meets the first and the second sides at corresponding corner points.

A crystal ingot cutting device and a crystal ingot cutting method are provided. The crystal ingot cutting device includes a driving unit, at least one cutting wire and a plurality of abrasive particles. The cutting wire is connected to the driving unit, wherein the driving unit drives a crystal ingot to move to the cutting wire and drives the cutting wire to reciprocate. A moving speed of the crystal ingot is 10˜700 μm/min, and a reciprocating speed of the cutting wire is 1800˜5000 m/min. The plurality of abrasive particles are arranged on the cutting wire, and a particle size of each abrasive particle is 5˜50 μm.

A method for slicing a workpiece includes feeding and slicing a workpiece held by a workpiece holder with a bonding member therebetween, while reciprocatively traveling a fixed abrasive grain wire wound around multiple grooved rollers to form a wire row, so that the workpiece is sliced at multiple positions simultaneously. The bonding member has a grindstone part. The method includes, after the workpiece is sliced and before it is drawn out from the wire row, a fixed-abrasive-grain removal step of pressing the wire against the grindstone to remove fixed abrasive grains from the wire while reciprocatively traveling. In the fixed-abrasive-grain removal step, the wire rate is 100 m/min. or less, and the load on each line of the wire is 30 g or more. The method prevents a sliced workpiece from catching a wire and from causing saw mark and wire break in drawing out the wire after slicing.

A workpiece management method includes a frame unit forming step of forming a frame unit with a workpiece supported in an opening of an annular frame via a resin sheet, a printing step of, after performing the frame unit forming step, printing identification information of the workpiece on the resin sheet in an area between an outer periphery of the workpiece and an inner periphery of the annular frame, a processing step of processing the workpiece by a processing machine, a separation step of separating the processed workpiece from the resin sheet, and a storage step of storing the resin sheet from which the workpiece has been separated. A sheet cutting machine suitable for use in the workpiece management method is also disclosed.