The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4). According to the invention, the production facility comprises at least one analysis device (6) for determining at least one individual property, particularly the doping, of the respective donor substrate (4), a data device (10) for producing donor substrate process data for individual donor substrates (4), wherein the donor substrate process data comprise analysis data of the analysis device (6), and the analysis data describe at least the individual property of the donor substrate (4), a laser device (12) for producing modifications (14) inside the donor substrate (4) in order to form a region of detachment (16) inside the respective donor substrate (4), wherein the laser device (12) can be operated according to the donor substrate process data of a concrete donor substrate (4) for the machining of the concrete donor substrate (4), and a detachment device (18) for producing mechanical voltages inside the respective donor substrate (4) for triggering and/or guiding a crack for separating respectively at least one wafer (2) from a donor substrate (4).

A production method of a wafer includes a wafer production step in which ultrasonic water is ejected against an end face of an ingot with cleavage layers created therein, thereby severing the wafer from a rest of the ingot to produce the wafer.

A water production system includes a filter unit that filters water to produce clear water, an ultraviolet light irradiator that irradiates, with ultraviolet light, the clear water produced by the filter unit, thereby degrading organic matter in the clear water, an ion exchange resin unit that purifies the clear water, in which the organic matter has been degraded by the ultraviolet light irradiator, into pure water, and a deaerated water production unit that deaerates the pure water to produce deaerated water.

A multiplicity of slices are simultaneously sliced from a workpiece during a slicing operation using a wire saw. A non-linear pitch function dTAR(WP) is selected dependent on a target thickness value function TTAR(WP), a pitch function dINI(WP) and a thickness value function TINI(WP), dTAR(WP) and adjacent grooves in the wire guide rollers are assigned a pitch at a position WP during the slicing operation, TINI(WP) slices which are obtained during a plurality of preceding slicing operations by means of the wire saw at the position WP are assigned a thickness value, dINI(WP), adjacent grooves in the wire guide rollers at the position WP are assigned a pitch during the preceding slicing operations, TTAR(WP) slices which are sliced off during the slicing operation at the position WP are assigned a target thickness value, WP denoting the axial position of the adjacent grooves with respect to the axes of the wire guide rollers.

The present invention provides a monocrystalline SiC substrate with an asymmetric shape for enhancing substrate stiffness against thermal induced deformations, the substrate comprising: a main region, and an asymmetric region located at a peripheral region of the substrate and adjacent to the main region, wherein the asymmetric region is inclined inwards, relative to the main region, to provide an asymmetric shape to the substrate. The present invention also provides a method of producing one or more substrates with an asymmetric shape, comprising: performing a multi-wire sawing process in which one or more substrates are cut with an wire-sawing web from an ingot placed on a stage, and cutting the one or more substrates with the asymmetric shape by controlling a relative movement between the wire-sawing web and the stage, the relative movement causing the wire-sawing web to describe a non-linear sawing path across the ingot to cut the asymmetric shape.

A method for producing microcracks in an interior of a composite structure includes: providing or producing the composite structure which has a solid body and at least one metallic coating and/or electrical components situated or provided on one side of the solid body, the solid body containing or being made of silicon carbide (SiC); and producing modifications in the interior of the solid body. Laser radiation is introduced into a flat surface of the solid body to cause multiphoton excitation which brings about plasma generation. The modifications are effected by the plasma in the form of a material transformation which generates compressive stresses in the solid body, thereby developing subcritical cracks in a surrounding area of a particular modification. The laser radiation is introduced into the solid body in pulses having an intensity which reaches a maximum within 10 ns after a start of a particular pulse.

A method cuts slices from workpieces using a wire saw having a wire array, which is tensioned in a plane between two wire guide rollers supported between fixed and floating bearings and having a chamber and a shell. The workpiece is fed through the wire array along a feed direction perpendicular to a workpiece axis, while simultaneously changing the shells' lengths by adjusting a temperature of the chambers with a first cooling fluid in accordance with a first correction profile specifying a change in the shells' lengths based on the depth of cut. The floating bearings are simultaneously axially moved by adjusting a temperature of the fixed bearings with a second cooling fluid in accordance with a second correction profile, which specifies a travel of the floating bearings based on the depth of cut. The first correction profile and the second correction profile are opposed to a shape deviation.

A slurry sprayer for supplying a slurry to a wire saw during ingot slicing is disclosed. The slurry sprayer includes a main body and a cover plate that is detachable from the main body for cleaning the slurry sprayer. In some embodiments, the slurry sprayer includes an adjustable support that allows the incline angle of the sprayer to be adjusted and allows the vertical and horizontal position of the slurry sprayer to be adjusted. In some embodiments, the slurry sprayer includes two feed openings to allow the slurry pressure to be more equalized across the slurry sprayer.

A dividing apparatus is provided with a second camera that forms a second image to be used for determining whether or not a wafer is divided at a first projected dicing line. That is, in the dividing apparatus, whether or not the wafer is divided at the first projected dicing line can be checked in reference to the second image. Hence, in the dividing apparatus, even in a case where part of the wafer remains at the first projected dicing line and the wafer is not divided, a dividing unit can be operated again to divide the wafer at the first projected dicing line. Consequently, in the dividing apparatus, the wafer can reliably be divided at the first projected dicing line.

Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.