A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.

A method uses a wire saw to cut slices from a workpiece. The wire saw has an array of saw wire tensioned in a plane between two rollers supported between fixed and floating bearings. During a cut-off operation, the workpiece is fed through the wire array with simultaneous axial movement of the floating bearings by adjusting the temperature of the fixed bearings with a cooling fluid in accordance with the temperature of the cooling fluid being in dependence on a depth of cut and correlating with a first correction profile, which specifies the travel of the floating bearings in dependence on the depth of cut. Also, the workpiece is fed through the wire array while simultaneously moving the workpiece along the workpiece axis in accordance with a second correction profile, specifying the travel of the workpiece. The first and second correction profiles are opposed to a shape deviation.

A peeling layer is formed in a workpiece in a state in which a laser beam is condensed so as to have a larger length along an indexing feed direction than a length along a processing feed direction. In this case, cracks included in the peeling layer extend along the indexing feed direction easily. It is consequently possible to increase a relative moving distance (index) between a place where the laser beam is condensed and the workpiece in an indexing feed step. As a result, it is possible to improve the throughput of a substrate manufacturing method using the laser beam.

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

Some embodiments relate to a processing tool for processing a singulated semiconductor die. The tool includes an evaluation unit, a drying unit, and a die wipe station. The evaluation unit is configured to subject the singulated semiconductor die to a liquid to detect flaws in the singulated semiconductor die. The drying unit is configured to dry the liquid from a frontside of the singulated semiconductor die. The die wipe station includes an absorptive drying structure configured to absorb the liquid from a backside of the singulated semiconductor die after the drying unit has dried the liquid from the frontside of the singulated semiconductor die.

A processing apparatus includes a chuck table for holding a workpiece, a processing unit for processing the workpiece held on the chuck table as supplying a processing water to the workpiece, and a water pan fixed to a bottom of the processing apparatus for receiving the processing water as a water leaked.

Provided that is a marking machine for applying markings to an ingot having separating layers formed at a depth corresponding to a thickness of a wafer to be produced. The marking machine includes a reading unit configured to read the ingot information formed on the ingot, a control unit having a storage section configured to store the ingot information read by the reading unit, and a marking unit configured to mark, based on the ingot information stored in the storage section, information that includes the ingot information, to the wafer to be produced.

Provided that is a marking machine for applying markings to an ingot having separating layers formed at a depth corresponding to a thickness of a wafer to be produced. The marking machine includes a reading unit configured to read the ingot information formed on the ingot, a control unit having a storage section configured to store the ingot information read by the reading unit, and a marking unit configured to mark, based on the ingot information stored in the storage section, information that includes the ingot information, to the wafer to be produced.

There is provided a peeling apparatus including an ingot holding unit that has a holding surface for holding an ingot, a wafer holding unit that is capable of approaching and separating from the ingot holding unit and has a holding surface for holding under suction a wafer to be produced, and a cleaning brush that cleans peel-off surfaces at which the wafer to be produced has been peeled off from the ingot and thereby removes peeling swarf.

Presented herein is a diamond comprising a table, a crown, a girdle, a pavilion, and a culet. The table is rectangular, having a length and a width. The table includes a first side, adjacent to a second side, adjacent to a third side, and adjacent to a fourth side. The first side of the table is directly connected with a first facet of the girdle. The second side of the table is directly connected with a second facet of the girdle. The crown includes a plurality of facets connecting the third side and the fourth side of the table to the girdle. The pavilion is connected to the girdle. The culet is positioned directly below a point having a 1% deviation from the center of the girdle.