This invention provides two variations of methods of separating a surface layer of the semiconductor crystal. In the second variation of the method, pulse laser emission is generated; a focused laser beam is directed onto the crystal in such a way that focus is placed in the layer separation plane perpendicular the axis of the beam, a laser beam is moved in such a way that focus is moved in the layer separation plane with forming the non-overlapping local regions with a disturbed topology of the crystal structure and with reduced interatomic bonds, wherein the local regions is distributed over the whole plane, an external action disturbing the reduced interatomic bonds is applied to the separable layer. The invention allows separating flat lateral surface layers from semiconductor crystals, and thin semiconductor washes from cylindrical semiconductor boules.

A method for separating a solid-state layer from a solid-state material includes: moving the solid-state material relative to a laser processing system; successively emitting a plurality of laser beams from the laser processing system to the solid-state material to create modifications within the solid-state material; adjusting the laser processing system for defined focusing of the plurality of laser beams and/or for continuous adjustment of energy of the plurality of laser beams as a function of at least one parameter; and detaching the solid-state layer from the solid-state material in a region of the modifications.

An apparatus and method for cleaving a liquid sample are disclosed. The apparatus includes a load lock chamber containing a cleaving module, a cryo-cooler, a vacuum chamber configured to receive the cleaving module from the load lock chamber, and a gate valve between the load lock chamber and the vacuum chamber. The cleaving module is configured to cleave a crystalline sample holder and the liquid sample. The liquid sample includes one or more liquid phase materials and is cleavable by the cleaving module when in the solid phase. The cryo-cooler is configured to cool and/or maintain a temperature of the sample holder and the sample below the melting point of each of the liquid phase materials. The gate valve has at least one opening therein configured to (i) allow the cleaving module to enter and exit the vacuum chamber and/or (ii) permit gaseous communication between the load lock chamber and the vacuum chamber.

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

A method for separating a solid-body layer from a donor substrate includes: providing a donor substrate having a planar surface, a longitudinal axis orthogonal to the planar surface, and a peripheral surface; producing a plurality of modifications within the donor substrate using at least one LASER beam, wherein the at least one LASER beam penetrates the donor substrate via the peripheral surface at an angle not equal to 90° relative to the longitudinal axis of the donor substrate; producing a stress-inducing polymer layer on the planar surface of the donor substrate; and producing mechanical stresses in the donor substrate by a thermal treatment of the stress-inducing polymer layer, wherein the mechanical stresses produce a crack for separating the solid-body layer, and wherein the crack propagates along the modifications.

Methods of separating a glass web that is moving at a glass web velocity. The method includes exposing a separation path on the glass web to at least one laser beam spot that moves with a laser beam spot velocity vector that is equal to a glass web velocity vector in a conveyance direction. The method also includes creating a defect on the separation path while the separation path is under thermal stress from the laser beam spot, whereupon the glass web spontaneously separates along the separation path in response to the defect. In further examples, a glass web separation apparatus includes a first reflector that rotates such that a laser beam spot repeatedly passes along a separation path and a second reflector that rotates such that the laser beam spot moves in a conveyance direction of the glass web.

Methods of separating a glass web that is moving at a glass web velocity. The method includes exposing a separation path on the glass web to at least one laser beam spot that moves with a laser beam spot velocity vector that is equal to a glass web velocity vector in a conveyance direction. The method also includes creating a defect on the separation path while the separation path is under thermal stress from the laser beam spot, whereupon the glass web spontaneously separates along the separation path in response to the defect. In further examples, a glass web separation apparatus includes a first reflector that rotates such that a laser beam spot repeatedly passes along a separation path and a second reflector that rotates such that the laser beam spot moves in a conveyance direction of the glass web.

Some embodiments relate to a processing tool for processing a singulated semiconductor die. The tool includes an evaluation unit, a drying unit, and a die wipe station. The evaluation unit is configured to subject the singulated semiconductor die to a liquid to detect flaws in the singulated semiconductor die. The drying unit is configured to dry the liquid from a frontside of the singulated semiconductor die. The die wipe station includes an absorptive drying structure configured to absorb the liquid from a backside of the singulated semiconductor die after the drying unit has dried the liquid from the frontside of the singulated semiconductor die.