After a glass sheet (G) having a scribe line (S) formed thereon is placed on a placement table (10) and positioned so that the scribe line (S) is positioned in a bending stress applying portion (15) of the placement table (10), when the glass sheet (G) is split along the scribe line (S) by applying a bending stress to a formation region of the scribe line (S) by the bending stress applying portion (15), the glass sheet (G) is positioned by laying a resin sheet (9) under the glass sheet (G) on the placement table (10) and aligning one side (G1) of the glass sheet (G) extending in a direction along the scribe line (S) with marks (Ma to Nd) projected onto a protruding portion (9a) of the resin sheet (9) by laser markers (16a to 16d).

Emerald-cut diamond with length/width of 1.35 to 1.40; table of 55 to 60 percent; corner ratio of 13.5 to 14.5 percent; girdle thickness up to 3 percent; crown main angle of 28 to 45 degrees; first crown break angle of 2 to 6 degrees; second crown break angle of 2 to 6 degrees; pavilion main angle of 43 to 48 degrees; first pavilion break angle of 2 to 5 degrees; and second pavilion break angle of 2 to 5 degrees. Diamonds cut in accordance with these parameters may have light performance 0-grade domains on a grade map with wide crown and pavilion mains ranges. A method cuts the diamond according to the parameters, and may include selecting crown and pavilion main angles from the map, and cutting the diamond sufficiently close to the selected cutting parameters to obtain the light performance grade of 0.

Emerald-cut diamond with length/width of 1.35 to 1.40; table of 55 to 60 percent; corner ratio of 13.5 to 14.5 percent; girdle thickness up to 3 percent; crown main angle of 28 to 45 degrees; first crown break angle of 2 to 6 degrees; second crown break angle of 2 to 6 degrees; pavilion main angle of 43 to 48 degrees; first pavilion break angle of 2 to 5 degrees; and second pavilion break angle of 2 to 5 degrees. Diamonds cut in accordance with these parameters may have light performance 0-grade domains on a grade map with wide crown and pavilion mains ranges. A method cuts the diamond according to the parameters, and may include selecting crown and pavilion main angles from the map, and cutting the diamond sufficiently close to the selected cutting parameters to obtain the light performance grade of 0.

A manufacturing method of semiconductor wafers includes preparing a ingot having a first major surface and a second major surface in a back side of the first major surface, a peeling layer being formed in the ingot along the first major surface; and applying a load to the ingot from outside thereof with respect to a surface direction along the first major surface such that a moment with a supporting point which is a first end of the ingot in the surface direction acts on the ingot, thereby peeling a wafer precursor from the ingot. Also, a dynamic force may be applied to the ingot such that a tensile stress along an ingot thickness direction acts on an entire area of the ingot in the surface direction, thereby peeling the wafer precursor from the ingot.

Provided is a method of manufacturing a glass sheet, which comprises a conveying step of conveying a glass sheet (G3) by holding an upper part of the glass sheet (G3) in a vertical posture. The conveying step comprises a first conveying step of conveying the glass sheet (G3) in a first direction along a direction perpendicular to a main surface of the glass sheet (G3), and a second conveying step of conveying the glass sheet (G3) in a second direction along a direction parallel to the main surface after the first conveying step. When a conveying direction of the glass sheet is changed from the first direction to the second direction, a lower part of the main surface (G3y) is supported by a roller (41) of a support portion (4) from a forward side in the conveying direction of the glass sheet (G3) conveyed in the first direction.

A wafer producing apparatus detects a facet area from an upper surface of an SiC ingot, sets X and Y coordinates of plural points lying on a boundary between the facet area and a nonfacet area in an XY plane, and sets a focal point of a laser beam having a transmission wavelength to SiC inside the SiC ingot at a predetermined depth from the upper surface of the SiC ingot. The predetermined depth corresponds to the thickness of the SiC wafer to be produced. A control unit increases the energy of the laser beam and raises a position of the focal point in applying the laser beam to the facet area as compared with the energy of the laser beam and a position of the focal point in applying the laser beam to the nonfacet area, according to the X and Y coordinates.

A MEMS device and a MEMS device manufacturing method are provided for suppressing damage to device parts. An exemplary method of manufacturing a resonance device includes radiating laser light from a bottom surface side of a second substrate to form modified regions inside the second substrate along dividing lines of a first substrate, which has device parts formed on a top surface thereof, and the second substrate, the top surface of which is bonded to the bottom surface of the first substrate via bonding portions. The method further includes dividing the first and second substrates along the dividing lines by applying stress to the modified regions. The bonding portions are formed along the dividing lines and block the laser light.

A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm.sup.2).

A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm.sup.2).

A dividing apparatus includes a table having a transparent plate having a holding surface for holding a workpiece thereon and a lower illumination unit for illuminating the holding surface from below, a first storage section for storing a first image including a white portion where illumination light from the lower illumination unit is transmitted through the workpiece and displayed as white and a black portion where the illumination light is blocked by the workpiece and displayed as black when an image of a kerf defined by a dividing unit in the workpiece held on the holding surface is captured by an image capturing unit with the lower illumination unit being energized, and a white pixel detecting section for detecting whether or not there are pixels in the white portion of the first image in directions perpendicular to directions along which a street extends.